AO4451 uses advanced trench technology provide excellent RDS(ON), ultr
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AO4451 P-Channel Enhancement Mode Field Effect Transistor
AO4451 uses advanced trench technology provide excellent RDS(ON), ultra-low gate charge. This device suitable load switch. device protected. Standard Product AO4451 Pb-free (meets ROHS Sony specifications). AO4451L Green Product ordering option. AO4451 AO4451L electrically identical.
-30V -10V) RDS(ON) 7.7m (VGS -10V) RDS(ON) (VGS -4.5V) Rating:
SOIC-8 View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25°C Power Dissipation TA=70°C Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead TA=25°C TA=70°C TSTG
Maximum -12.8
Units
Symbol
Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4451
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-15A RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-10A Forward Transconductance VDS=-5V, ID=-15A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C -1.4 -0.69 5355 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-15A VGS=-10V, VDS=-15V, RL=1, RGEN=3 IF=-15A, dI/dt=100A/µs 82.5 6400 -1.9 -2.7 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Total Gate Charge Qg(4.5V) Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures 6,12,14 obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. curve provides single pulse rating. Apr. 2006 THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4451
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-VDS (Volts) On-Region Characteristics Normalized On-Resistance ID=-15A VGS=-10V VGS=-3V -4.5V -3.5V -ID(A) 125°C 25°C -VGS(Volts) Figure Transfer Characteristics -10V VDS=-5V
RDS(ON)
VGS=-4.5V
VGS=-10V
VGS=-4.5V
Figure On-Resistance Drain Current Gate Voltage
Temperature (°C) Figure On-Resistance Junction Temperature
RDS(ON) -VGS (Volts) Figure On-Resistance Gate-Source Voltage 25°C ID=-15A
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 -VSD (Volts) Figure Body-Diode Characteristics 125°C VGS=0V 25°C
125°C
Alpha Omega Semiconductor, Ltd.
AO4451
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
8000 VDS=-15V ID=-15A Capacitance (pF) 7000 6000 5000 4000 3000 2000 1000 (nC) Figure Gate-Charge Characteristics 100.0 RDS(ON) limited 10.0 (Amps) 100µs Power 10ms 0.1s TJ(Max)=150°C TA=25°C -VDS (Volts) Figure Maximum Forward Biased Safe Operating Area (Note Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 10µs -VDS (Volts) Figure Capacitance Characteristics Crss Ciss
-VGS (Volts)
Coss
0.001 TJ(Max)=150°C TA=25°C
1000 Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
0.01
Single Pulse 0.0001 Pulse Width Figure Normalized Maximum Transient Thermal Impedance 0.001 0.01 1000
0.01 0.00001
Alpha Omega Semiconductor, Ltd.
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