AO4447 uses advanced trench technology provide excellent RDS(ON), ultr

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

AO4447 uses advanced trench technology provide excellent RDS(ON), ultr

Datasheet Thumbnail

Top Searches for this datasheet

AO4447 P-Channel Enhancement Mode Field Effect Transistor
AO4447 uses advanced trench technology provide excellent RDS(ON), ultra-low gate charge. This device suitable load switch. device protected. Standard Product AO4447 Pb-free (meets ROHS Sony specifications). AO4447L Green Product ordering option. AO4447 AO4447L electrically identical.
-30V (VGS -10V) RDS(ON) 7.5m (VGS -10V) RDS(ON) (VGS -4V) Rating:
SOIC-8 View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum -13.6
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4447
Electrical Characteristics J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, D=-15A RDS(ON) Static Drain-Source On-Resistance VGS=-4V, ID=-13A Forward Transconductance VDS=-5V, ID=-15A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C -0.69 5500 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 88.8 VGS=-10V, VDS=-15V, D=45.2 10.1 19.4 VGS=-10V, VDS=-15V, RL=1.7, RGEN=3 IF=-15A, dI/dt=100A/s IF=-15A, dI/dt=100A/s 11.5 46.6 67.7 6600 -1.3 -1.6 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Total Gate Charge Qg(4.5V) Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures 6,12,14 obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. June 2006
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4447
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-VDS (Volts) On-Region Characteristics Normalized On-Resistance Temperature (°C) Figure On-Resistance Junction Temperature VGS=-4V ID=-13A VGS=-2.5V -VGS(Volts) Figure Transfer Characteristics -3.5V -10V -ID(A) 25°C VDS=-5V 125°C
RDS(ON)
VGS=-4V
VGS=-10V ID=-15A
VGS=-10V Figure On-Resistance Drain Current Gate Voltage
RDS(ON) 125°C -VGS (Volts) Figure On-Resistance Gate-Source Voltage 25°C ID=-15A
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 -VSD (Volts) Figure Body-Diode Characteristics 125°C
25°C
Alpha Omega Semiconductor, Ltd.
AO4447
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
VDS=-15V ID=-15A Capacitance (pF) 8000 7000 6000 5000 4000 3000 2000 1000 (nC) Figure Gate-Charge Characteristics 100.0 RDS(ON) limited 10.0 (Amps) 100s Power 10ms 0.1s TJ(Max)=150°C TA=25°C -VDS (Volts) Figure Maximum Forward Biased Safe Operating Area (Note Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse -VDS (Volts) Figure Capacitance Characteristics Crss Ciss
-VGS (Volts)
Coss
0.001
TJ(Max)=150°C TA=25°C
1000 Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
0.01
Single Pulse 0.0001 0.001 0.01 1000
0.01 0.00001
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
ALPHA OMEGA
SEMICONDUCTOR, LTD.
SO-8 Carrier Tape
SO-8 Tape Reel Data
SO-8 Reel
SO-8 Tape
Leader Trailer Orientation

AO4447 uses advanced trench technology provide excellent RDS(ON), ultr

Top Searches for this datasheet

Other recent searches