AO3701 uses advanced trench technology provide excellent DS(ON) gate c

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AO3701 uses advanced trench technology provide excellent DS(ON) gate c

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AO3701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AO3701 uses advanced trench technology provide excellent DS(ON) gate charge. Schottky diode provided facilitate implementation bidirectional blocking switch, DC-DC conversion applications. protected. Standard Product AO3701 Pb-free (meets ROHS Sony specifications). AO3701L Green Product ordering option. AO3701 AO3701L electrically identical.
SOT-23-5 View
Features
-20V (VGS -10V) RDS(ON) (VGS -10V) RDS(ON) 100m (VGS -4.5V) RDS(ON) 145m (VGS -2.5V) Rating: 2000V SCHOTTKY 20V, VF<0.5V@0.5A
Absolute Maximum Ratings A=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current
MOSFET -2.3
Schottky
Units
TA=70°C TA=25°C
Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction Storage Temperature Range Parameter: Thermal Characteristics MOSFET Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
TA=70°C TA=25°C TA=70°C
TSTG Symbol 1.14 0.72 80.3 109.4 136.5 58.5
0.92 0.59
Units °C/W
Steady-State Steady-State Steady-State Steady-State
°C/W
Alpha Omega Semiconductor, Ltd.
AO3701
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-16V, VGS=0V TJ=55°C VDS=0V, VGS=±10V VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-3A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-2A VGS=-2.5V, ID=-1A Forward Transconductance VDS=-5V, ID=-3A -0.65 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.6 -0.8 -0.95 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-3A VGS=-10V, VDS=-10V, RL=2.8, RGEN=3 13.5 0.39 0.45 -0.9 -0.5 -1.4 Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Total Gate Charge Gate Source Charge tD(on) tD(off) Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
IF=-3A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs IF=0.5A VR=16V VR=16V, TJ=125°C VR=10V IF=1A, dI/dt=100A/µs IF=1A, dI/dt=100A/µs
SCHOTTKY PARAMETERS Forward Voltage Drop Maximum reverse leakage current Junction Capacitance Schottky Reverse Recovery Time Schottky Reverse Recovery Charge
value measured with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. curve provides single pulse rating. Rev1: 2006
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO3701
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-10.0V -6.0V -4.0V -3.0V -2.5V -2.0V -ID(A) -5.0V VDS=-5V
125°C
25°C
-VDS (Volts) On-Region Characteristics Normalized On-Resistance RDS(ON) VGS=-10V VGS=-4.5V VGS=-2.5V
-VGS(Volts) Figure Transfer Characteristics ID=-2A, VGS=-4.5V ID=-3A, VGS=-10V
ID=-1A, VGS=-2.5V
Temperature (°C) Figure On-Resistance Junction Temperature
Figure On-Resistance Drain Current Gate Voltage
RDS(ON) -VGS (Volts) Figure On-Resistance Gate-Source Voltage 25°C ID=-3A 125°C
1E+01 1E+00 125°C 1E-01 1E-02 1E-03 1E-04 1E-05 1E-06 -VSD (Volts) Figure Body-Diode Characteristics 25°C
Alpha Omega Semiconductor, Ltd.
AO3701
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
ID=-3A Capacitance (pF)
-VGS (Volts)
Ciss
Crss
Coss
(nC) Figure Gate-Charge Characteristics
-VDS (Volts) Figure Capacitance Characteristics
100.0 TJ(Max)=150°C TA=25°C 10µs
TJ(Max)=150°C TA=25°C 100µs Power
(Amps)
10.0
RDS(ON) limited
-VDS (Volts)
10ms 0.1s
0.001
0.01
1000
Figure Maximum Forward Biased Safe Operating Area (Note
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=110°C/W descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
AO3701 TYPICAL ELECTRICAL THERMAL CHARACTERISTICS: SCHOTTKY
125°C Capacitance (pF) (Amps) 25°C 0.001 (Volts) Figure Schottky Forward Characteristics (Volts) Figure Schottky Capacitance Characteristics 1MHz
0.01
1.0E-02
(Volts) IF=0.5A
Leakage Current
1.0E-03
1.0E-04
VR=16V
1.0E-05
Temperature (°C)
1.0E-06 Temperature (°C) Figure Schottky Leakage current Junction Temperature
Figure Schottky Forward Drop Junction Temperature Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=135°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
1000
Pulse Width Figure Schottky Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.

AO3701 uses advanced trench technology provide excellent DS(ON) gate c

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