AO3700 uses advanced trench technology provide excellent DS(ON) gate c
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AO3700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AO3700 uses advanced trench technology provide excellent DS(ON) gate charge. Schottky diode provided facilitate implementation bidirectional blocking switch, DC-DC conversion applications. Standard Product AO3700 Pb-free (meets ROHS Sony specifications). AO3700L Green Product ordering option. AO3700 AO3700L electrically identical.
3.3A 10V) RDS(ON) (VGS 10V) RDS(ON) (VGS 4.5V) RDS(ON) 160m (VGS 2.5V) SCHOTTKY 20V, VF<0.5V@0.5A
SOT-23-5 View
Absolute Maximum Ratings A=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current TA=70°C Pulsed Drain Current Schottky reverse voltage TA=25°C Continuous Forward Current TA=70°C Pulsed Forward Current Power Dissipation Junction Storage Temperature Range Parameter: Thermal Characteristics MOSFET Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
MOSFET
Schottky
Units
TA=25°C TA=70°C
TSTG Symbol
1.15 80.3 109.4 136.5 58.5
0.92 0.59
Units °C/W
Steady-State Steady-State Steady-State Steady-State
°C/W
Alpha Omega Semiconductor, Ltd.
AO3700
Electrical Characteristics =25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=3.3A TJ=125°C 11.7 0.81 Units
VGS=4.5V, ID=3.0A VGS=2.5V, ID=1A Forward Transconductance VDS=5V, ID=3.3A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge tD(on) Turn-On DelayTime Turn-On Rise Time tD(off) Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge SCHOTTKY PARAMETERS Forward Voltage Drop Maximum reverse leakage current Junction Capacitance Schottky Reverse Recovery Time Schottky Reverse Recovery Charge
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
0.55 14.5 10.2 0.39
VGS=4.5V, VDS=15V, ID=3.3A
VGS=10V, VDS=15V, RL=4.7, RGEN=6 IF=3.3A, dI/dt=100A/µs IF=3.3A, dI/dt=100A/µs IF=0.5A VR=16V VR=16V, TJ=125°C VR=10V IF=1A, dI/dt=100A/µs IF=1A, dI/dt=100A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. curve provides single pulse rating. Rev0: October 2005 THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO3700
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
3.5V ID(A)
VDS=5V
VGS=2.5V
125°C
25°C
(Volts) On-Region Characteristics
VGS(Volts) Figure Transfer Characteristics
RDS(ON) Figure On-Resistance Drain Current Gate Voltage 125° RDS(ON) 25°C (Volts) Figure On-Resistance Gate-Source Voltage ID=3.3A VGS=10V VGS=4.5V VGS=2.5V
VGS=4.5V Normalized On-Resistance ID=3.0A
VGS=10V ID=3.3A
VGS=2.5V ID=1A
Temperature (°C) Figure On-Resistance Junction Temperature
1.0E+01 1.0E+00 1.0E-01 125°C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 (Volts) Figure Body-Diode Characteristics 25°C
Alpha Omega Semiconductor, Ltd.
AO3700
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
VDS=15V ID=3.3A Capacitance (pF) (nC) Figure Gate-Charge Characteristics (Volts) Figure Capacitance Characteristics Crss Ciss
(Volts)
Coss
100.0 TJ(Max)=150°C TA=25°C 10.0 (Amps) (Volts) Figure Maximum Forward Biased Safe Operating Area (Note 10ms 0.1s 100µs RDS(ON) limited 10µs
TJ(Max)=150°C TA=25°C
Power
0.001
0.01
1000 Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=110°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.01 0.00001
0.0001
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
0.001
0.01
1000
Alpha Omega Semiconductor, Ltd.
AO3700 TYPICAL ELECTRICAL THERMAL CHARACTERISTICS: SCHOTTKY
125°C Capacitance (pF) (Amps) 25°C 0.001 (Volts) Figure Schottky Forward Characteristics (Volts) Figure Schottky Capacitance Characteristics 1MHz
0.01
1.0E-02
(Volts) IF=0.5A
Leakage Current
1.0E-03
1.0E-04
VR=16V
1.0E-05
Temperature (°C)
1.0E-06 Temperature (°C) Figure Schottky Leakage current Junction Temperature
Figure Schottky Forward Drop Junction Temperature Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=135°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
1000
Pulse Width Figure Schottky Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
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