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AO3424 uses advanced trench technology provide excellent RDS(ON), very
Top Searches for this datasheetAO3424 N-Channel Enhancement Mode Field Effect Transistor AO3424 uses advanced trench technology provide excellent RDS(ON), very gate charge operation with gate voltages 2.5V. This device suitable load switch applications. Standard Product AO3424 Pb-free (meets ROHS Sony specifications). AO3424L Green Product ordering option. AO3424 AO3424L electrically identical. 10V) RDS(ON) (VGS 10V) RDS(ON) (VGS 4.5V) RDS(ON) 157m (VGS 2.5V) TO-236 (SOT-23) View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25°C Power Dissipation TA=70°C Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead TA=25°C Maximum Units TA=70°CF TSTG Symbol Steady-State Steady-State Units °C/W °C/W °C/W Alpha Omega Semiconductor, Ltd. AO3424 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=2A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=2A VGS=2.5V, ID=1A Forward Transconductance VDS=5V, ID=2A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 11.7 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=2A VGS=10V, VDS=15V, RL=7.5, RGEN=6 IF=2A, dI/dt=100A/µs 14.5 10.2 1.45 0.001 Units DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Total Gate Charge Gate Source Charge tD(on) tD(off) Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=2A, dI/dt=100A/µs value measured with device mounted FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures 6,12,14 obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted curve provides single pulse rating. maximum current rating limited bond-wires. 2006 FR-4 board with 2oz. Copper, still environment with A=25°C. THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. AO3424 TYPICAL ELECTRICAL THERMAL CHARACTERISTICS 3.5V ID(A) VDS=5V VGS=2.5V 125°C 25°C (Volts) On-Region Characteristics VGS(Volts) Figure Transfer Characteristics RDS(ON) VGS=10V VGS=4.5V VGS=2.5V VGS=4.5V ID=2A Normalized On-Resistance VGS=10V ID=2A VGS=2.5 ID=1A Temperature (°C) Figure On-Resistance Junction Temperature Figure On-Resistance Drain Current Gate Voltage RDS(ON) (Volts) Figure On-Resistance Gate-Source Voltage 25°C 125°C ID=2A 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 (Volts) Figure Body-Diode Characteristics 125°C 25°C Alpha Omega Semiconductor, Ltd. AO3424 TYPICAL ELECTRICAL THERMAL CHARACTERISTICS VDS=15V ID=2A Capacitance (pF) (nC) Figure Gate-Charge Characteristics 10.0 RDS(ON) limited (Amps) 10ms TJ(Max)=150°C TA=25°C (Volts) Figure Maximum Forward Biased Safe Operating Area (Note 0.1s 0.001 10µs 100µs Power (Volts) Figure Capacitance Characteristics Coss Crss Ciss (Volts) TJ(Max)=150°C TA=25°C 0.01 1000 Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90°C/W descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Single Pulse 0.01 0.00001 0.0001 Pulse Width Figure Normalized Maximum Transient Thermal Impedance 0.001 0.01 1000 Alpha Omega Semiconductor, Ltd. 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