DUAL N-CHANNEL DUAL P-CHANNEL MATCHED PAIR MOSFET GENERAL DESCRIP

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DUAL N-CHANNEL DUAL P-CHANNEL MATCHED PAIR MOSFET GENERAL DESCRIP

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ALD1105
DUAL N-CHANNEL DUAL P-CHANNEL MATCHED PAIR MOSFET
GENERAL DESCRIPTION ALD1105 monolithic dual N-channel dual P-channel complementary matched transistor pair intended broad range analog applications. These enhancement-mode transistors manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process. consists ALD1116 N-channel MOSFET pair ALD1117 P-channel MOSFET pair package. ALD1105 drain current, leakage current version ALD1103. ALD1105 offers high input impedance negative current temperature coefficient. transistor pair matched minimum offset voltage differential thermal response, designed precision signal switching amplifying applications +12V systems where input bias current, input capacitance fast switching speed desired. Since these MOSFET devices, they feature very large (almost infinite) current gain frequency, near operating environment. When used complementary pairs, dual CMOS analog switch constructed. addition, ALD1105 intended building block differential amplifier input stages, transmission gates, multiplexer applications. ALD1105 suitable precision applications which require very high current gain, beta, such current mirrors current sources. high input impedance high current gain field effect transistors result extremely current loss through control gate. current gain limited gate input leakage current, which specified 30pA room temperature. example, beta device drain current 25°C 3mA/30pA 100,000,000. FEATURES Thermal tracking between N-channel P-channel pairs threshold voltage 0.7V both N-channel P-channel MOSFETs input capacitance 10mV High input impedance 1013 typical input output leakage currents Negative current (IDS) temperature coefficient Enhancement mode (normally off) current gain Matched N-channel pair matched P-channel pair package
APPLICATIONS Precision current mirrors Complementary push-pull linear drives Discrete Analog switches Analog signal Choppers Differential amplifier input stage Voltage comparator Data converters Sample Hold Analog current inverter Precision matched current sources
CONFIGURATION
VDP1 PACKAGE
BLOCK DIAGRAM
GATE
DRAIN
SOURCE SUBSTRATE
DRAIN (14)
SOURCE (12)
GATE (13)
ORDERING INFORMATION
Operating Temperature Range* -55°C +125°C +70°C +70°C 14-Pin CERDIP Package ALD1105 14-Pin Plastic Package ALD1105 14-Pin SOIC Package ALD1105
GATE
DRAIN
SOURCE SUBSTRATE (11)
DRAIN (10)
SOURCE
Contact factory industrial temperature range.
GATE
2005 Advanced Linear Devices, Inc. Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, Gate-source voltage, Power dissipation Operating temperature range Storage temperature range Lead temperature, seconds 13.2V 13.2V +70°C -55°C +125°C -65°C +150°C +260°C
package package
OPERATING ELECTRICAL CHARACTERISTICS 25°C unless otherwise specified
Channel Parameter Symbol Gate Threshold Voltage Offset Voltage VGS1 VGS2 Unit Test Conditions 10µA Channel -0.4 -0.7 -1.0 Unit Test Conditions -1µA -10µA
Gate Threshold Temperature TCVT Drift Drain Current Trans-. conductance Mismatch Output Conductance Drain Source Resistance (ON) RDS(ON)
-1.2
mV/°C
-1.3
mV/°C
IDS= 10mA
-1.3
IDS= -10mA
mmho
0.25
0.67
mmho
µmho 10mA 0.1V
µmho -10mA -0.1V
1200
1800
Drain Source Resistance RDS(ON) Mismatch Drain Source Breakdown Voltage Drain Current Gate Leakage Current Input Capacitance
0.1V
-0.1V
BVDSS IDS(OFF) IGSS CISS
=12V 125°C =12V 125°C
-1µA -12V 125°C =-12V 125°C
ALD1105
Advanced Linear Devices
CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
VOLTAGE OUTPUT CHARACTERISTICS
DRAIN SOURCE CURRENT (µA)
25°C -12V
DRAIN SOURCE CURRENT (mA)
-7.5 25°C
-12V -10V
-5.0
-250
-2.5
DRAIN SOURCE VOLTAGE
-500 -320 -160
DRAIN SOURCE VOLTAGE (mV)
FORWARD TRANSCONDUCTANCE DRAIN SOURCE VOLTAGE
FORWARD TRANSCONDUCTANCE (mmho)
0.05 0.02 0.01 +25°C -1mA +125°C
TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS
DRAIN SOURCE CURRENT (µA)
1KHz
-5mA
25°C -0.8 -1.6 -2.4 -3.2 -4.0
DRAIN SOURCE VOLTAGE
GATE SOURCE VOLTAGE
DRAIN SOURCE RESISTANCE (ON) GATE SOURCE VOLTAGE
DRAIN SOURCE RESISTANCE
0.4V +125°C
DRAIN CURRENT AMBIENT TEMPERATURE
DRAIN SOURCE CURRENT (pA)
1000 -12V
+25°C
+100 +125
GATE SOURCE VOLTAGE
AMBIENT TEMPERATURE (°C)
ALD1105
Advanced Linear Devices
CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
1000
DRAIN SOURCE CURRENT (mA)
VOLTAGE OUTPUT CHARACTERISTICS
DRAIN SOURCE CURRENT (µA)
25°C
25°C
-500
-1000 -160
DRAIN SOURCE VOLTAGE
DRAIN SOURCE VOLTAGE (mV)
FORWARD TRANSCONDUCTANCE DRAIN SOURCE VOLTAGE
TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS
FORWARD TRANSCONDUCTANCE (mmho)
10mA +25°C
DRAIN SOURCE CURRENT (µA)
1KHz
25°C -10V -12V
+125°C
DRAIN SOURCE VOLTAGE
GATE SOURCE VOLTAGE
DRAIN SOURCE RESISTANCE (ON) GATE SOURCE VOLTAGE
DRAIN SOURCE RESISTANCE
DRAIN CURRENT AMBIENT TEMPERATURE
DRAIN SOURCE CURRENT (pA)
1000 +12V
0.2V
+125°C
+25°C
+100 +125
GATE SOURCE VOLTAGE
AMBIENT TEMPERATURE (°C)
ALD1105
Advanced Linear Devices
TYPICAL APPLICATIONS
CURRENT SOURCE MIRROR
CURRENT SOURCE WITH GATE CONTROL
ISET
RSET SOURCE
ISET Digital Logic Control Current Source
RSET
ISOURCE
Channel MOSFET Channel MOSFET
SOURCE ISET RSET RSET
Channel MOSFET Q3,Q4 Channel MOSFET
DIFFERENTIAL AMPLIFIER
CURRENT SOURCE MULTIPLICATION
PMOS PAIR VOUT
ISET
RSET ISOURCE ISET
VIN+
NMOS PAIR
VIN-
QSET
ALD1105
Current Source
Channel MOSFET Channel MOSFET
QSET, Q1.QN: 1106 1105 Channel MOSFET
ALD1105
Advanced Linear Devices
TYPICAL APPLICATIONS
BASIC CURRENT SOURCES CHANNEL CURRENT SOURCE CHANNEL CURRENT SOURCE
ISET ISOURCE RSET
ALD1105
SOURCE ALD1105 ISET RSET
ISOURCE ISET
RSET
RSET
RSET Channel MOSFET
Channel MOSFET
CASCODE CURRENT SOURCES
ISET ISOURCE
RSET
ISET RSET ISOURCE
ISOURCE ISET
RSET
RSET
Channel MOSFET (1/2 ALD1105 ALD1116)
Channel MOSFET (1/2 ALD1105 ALD1117)
ALD1105
Advanced Linear Devices

DUAL N-CHANNEL DUAL P-CHANNEL MATCHED PAIR MOSFET GENERAL DESCRIP

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