N-Channel 30-V (D-S) MOSFET Features -Low rDS(on) Provides Higher

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N-Channel 30-V (D-S) MOSFET Features -Low rDS(on) Provides Higher

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AF4502C
N-Channel 30-V (D-S) MOSFET Features
-Low rDS(on) Provides Higher Efficiency Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power current handling capability -Low side high current DC-DC Converter applications
These miniature surface mount MOSFETs utilize High Cell Density process. rDS(on) assures minimal power loss conserves energy, making this device ideal power management circuitry. Typical applications PWMDC-DC converters, power management portable battery-powered products such computers, printers, battery charger, telecommunication power system, telephones power system.
Product Summary
rDS(on) 20@VGS=4.5V 13.5@VGS=10V 30@VGS=-4.5V 19@VGS=-10V 10.0 -6.8 -8.5
Assignments
Descriptions
Name
Description Source (NMOS) Gate (NMOS) Drain (NMOS) Source (PMOS) Gate (PMOS) Drain (PMOS)
SOP-8
Ordering information
Feature :MOSFET 4502C Package SOP-8 Lead Free Blank Normal Lead Free Package Packing Blank Tube Bulk Tape Reel
This datasheet contains product information. Anachip Corp. reserves rights modify product specification without notice. liability assumed result this product. rights under patent accompany sale product.
Rev. 2004
AF4502C
N-Channel 30-V (D-S) MOSFET Absolute Maximum Ratings unless otherwise noted)
Symbol TSTG N-Channel Continuous Drain Current (Note Pulsed Drain Current (Note Continuous Source Current (Diode Conduction) (Note Power Dissipation (Note Operating Junction Storage Temperature Range Drain-Source Voltage Gate-Source Voltage Parameter P-Channel -8.5 -6.8 -2.1 Units
Thermal Resistance Ratings
Symbol Parameter Maximum Junction-to-Case (Note Maximum Junction-to-Ambient (Note Maximum Units
Note surface Mounted Board. Note Pulse width limited maximum junction temperature
Specifications unless otherwise noted)
Symbol Static V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) Drain-Source breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current (Note Drain-Source On-Resistance
(Note
Parameter
Test Conditions VGS=0V, ID=250uA VGS=0V, ID=-250uA VDS= VGS, ID=250uA VDS= VGS, ID=-250uA VGS=20V, VDS=0V VGS=-20V, VDS=0V VDS=24V, VGS=0V VDS=-24V, VGS=0V VDS=5V, VGS=10V VDS=-5V, VGS=-10V VGS=10V, ID=10A VGS=4.5V, ID=8.4A VGS=-10V, ID=-8.5A VGS=-4.5V, ID=-6.8A VDS=15V, ID=10A VDS=-15V, ID=-9.5A
Limits Min. Typ. -1.0 1.95 -1.6
Max. ±100 ±100 13.5
Unit
Forward Tranconductance
(Note
Anachip Corp. www.anachip.com.tw
Rev. 2004
AF4502C
N-Channel 30-V (D-S) MOSFET Specifications unless otherwise noted)
Symbol Dynamic Switching td(on) td(off) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time N-Channel VDD=15, VGS=10V ID=1A, RGEN=25 P-Channel VDD=-15, VGS=-10V ID=-1A, RGEN=15 Total Gate Charge Gate-Source Charge Gate-Drain Charge N-Channel VDS=15V, VGS=4.5V ID=10A P-Channel VDS=-15V, VGS=-4.5V ID=-10A Parameter Test Conditions Limits Min. Typ. Max. Unit
Note Pulse test: 300us duty cycle Note Guaranteed design, subject production testing.
Anachip Corp. www.anachip.com.tw
Rev. 2004
AF4502C
N-Channel 30-V (D-S) MOSFET Typical Performance Characteristics
Anachip Corp. www.anachip.com.tw
Rev. 2004
AF4502C
N-Channel 30-V (D-S) MOSFET Typical Performance Characteristics (Continued)
Anachip Corp. www.anachip.com.tw
Rev. 2004
AF4502C
N-Channel 30-V (D-S) MOSFET Typical Performance Characteristics (Continued)
Anachip Corp. www.anachip.com.tw
Rev. 2004
AF4502C
N-Channel 30-V (D-S) MOSFET Typical Performance Characteristics (Continued)
Anachip Corp. www.anachip.com.tw
Rev. 2004
AF4502C
N-Channel 30-V (D-S) MOSFET Marking Information
SOP-8L
View
Logo Part Number
4502C
code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Week code: "A~Z": 01~26; "A~Z": 27~52 Year code: =2004 Factory code
Package Information
Package Type: SOP-8L
VIEW (4X) 0.015x45
(4X)
VIEW
Symbol
Dimensions Millimeters Min. Nom. Max. 1.40 1.60 1.75 0.10 0.25 1.30 1.45 1.50 0.33 0.41 0.51 0.19 0.20 0.25 4.80 5.05 5.30 3.70 3.90 4.10 1.27 5.79 5.99 6.20 0.38 0.71 1.27 0.10
Dimensions Inches Min. Nom. Max. 0.055 0.063 0.069 0.040 0.100 0.051 0.057 0.059 0.013 0.016 0.020 0.0075 0.008 0.010 0.189 0.199 0.209 0.146 0.154 0.161 0.050 0.228 0.236 0.244 0.015 0.028 0.050 0.004
Anachip Corp. www.anachip.com.tw
Rev. 2004

N-Channel 30-V (D-S) MOSFET Features -Low rDS(on) Provides Higher

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