P-Channel Enhancement Mode Power MOSFET Features Simple Gate Driv

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P-Channel Enhancement Mode Power MOSFET Features Simple Gate Driv

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AF1333P
P-Channel Enhancement Mode Power MOSFET Features
Simple Gate Drive Fast Switching Speed Small Package Outline (SOT323)
advanced power MOSFET provides designer with best combination fast switching, on-resistance cost-effectiveness.
Product Summary
BVDSS -20V (on) 800m. -550mA
Assignments
(Top View)
Descriptions
Name Description Gate Source Drain
Ordering information
Feature :MOSFET 1333P Package SOT323 Lead Free Blank Normal Lead Free Package Packing Blank Tube Bulk Tape Reel
Block Diagram
This datasheet contains product information. Anachip Corp. reserves rights modify product specification without notice. liability assumed result this product. rights under patent accompany sale product.
Rev. 2004
AF1333P
P-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings
Symbol TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note Pulsed Drain Current (Note Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Rating -550 -440 -2.5 0.35 0.003 +150 +150 Unit W/oC
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-Ambient (Note Max. Value Unit
Electrical Characteristics TA=25oC (unless otherwise specified)
Symbol BVDSS BVDSS RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Parameter Test Conditions Drain-Source Breakdown Voltage VGS=0V, ID=-250uA Breakdown Voltage Temperature Reference 25oC, ID=-1mA Coefficient VGS=-10V, ID=-550mA Static Drain-Source VGS=-4.5V, ID=-550mA On-Resistance VGS=-2.5V, ID=-300mA Gate Threshold Voltage VDS=VGS, ID=-250uA Forward Transconductance VDS=-5V, ID=-500mA Drain-Source Leakage Current VDS=-20V, VGS=0V (TJ=25oC) Drain-Source Leakage Current VDS=-16V, VGS=0V (TJ=70oC) Gate-Source Leakage VGS=±12V Total Gate Charge (Note ID=-500mA, VDS=-16V, Gate-Source Charge VGS=-4.5V Gate-Drain ("Miller") Charge Turn-On Delay Time (Note VDS=-10V, ID=-500mA, Rise Time RG=3.3, VGS=-5V Turn-Off Delay Time RD=20 Fall-Time Input Capacitance VGS=0V, VDS=-10V, Output Capacitance f=1.0MHz Reverse Transfer Capacitance Min. -0.5 Typ. 0.01 Max. 1000 -1.2 ±100 105.6 Unit V/oC
Source-Drain Diode
Note Surface mounted board, sec. Note Pulse width limited Max. junction temperature. Note Pulse width 300us, duty cycle
Symbol
Parameter Forward Voltage (Note
Test Conditions IS=-300mA, VGS=0V
Min.
Typ.
Max. -1.2
Unit
Anachip Corp. www.anachip.com.tw
Rev.
2004
AF1333P
P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics
Typical Output Characteristics
Typical Output Characteristics
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
Forward Characteristic Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
Anachip Corp. www.anachip.com.tw
Rev.
2004
AF1333P
P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued)
Gate Charge Characteristics
Typical capacitance Characteristics
Maximum Safe Operating Area
Effective Transient Thermal Impedance
Switching Time Waveform
Gate Charge Waveform
Anachip Corp. www.anachip.com.tw
Rev.
2004
AF1333P
P-Channel Enhancement Mode Power MOSFET Marking Information
(Top View) SOT323
Part Number: AF1333P A~Z: Week: 27~52 A~Z: Week: 01~26 Year: years cycle 2004, 2008, 2012. 2005, 2009, 2013. 2006, 2010, 2014. 2007, 2011, 2015.
Package Information
Package Type: SOT323
*Dimension does include mold protrusions.
Symbol
Dimensions Millimeters Min. 0.90 0.03 1.90 0.20 2.00 1.15 Nom. 1.00 0.07 2.00 0.30 2.10 1.25 1.30 Bsc. Max. 1.10 0.10 2.10 0.40 2.20 1.35
Dimensions Inches Min. 0.035 0.001 0.075 0.008 0.079 0.045 Nom. 0.039 0.003 0.079 0.012 0.083 0.049 0.051 Bsc. Max. 0.043 0.004 0.083 0.016 0.087 0.053
Anachip Corp. www.anachip.com.tw
Rev.
2004

P-Channel Enhancement Mode Power MOSFET Features Simple Gate Driv

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