Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si7136DP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 2.0963 9.0488 8.0177 50.6165 Ambient 24.2344 558.7573 70.7495 1.4435 Case 2.3554 690.6627 1.6922 820.2806 Case 136.5785 595.8486 9.9128 8.8712 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 73741 Revision 16-Jan-06
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Si7136DP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 5.3871 10.2337 17.6421 36.7131 Ambient 15.7961 98.5875 538.0285 1.3275
Case 657.3010 1.0857 1.1764 935.2605 Case 388.4781 322.0178 5.2085 2.4604
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 73741 Revision 16-Jan-06
Si7136DP_RC
Document Number: 73741 Revision 16-Jan-06
www.vishay.com
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