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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si4684DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank configuration included. corresponding values Cauer/Filter configuration available upon request.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 5.4825 14.0940 11.8997 18.5795 Ambient 8.6182 93.6547 6.1489 3.2294 Case Case Foot 2.7730 5.6035 12.5420 6.9783 Foot 617.0550 18.1606 73.2626 9.1092
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number:74111 Revision 14-Nov-05
www.vishay.com
Si4684DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 4.0154 9.4382 8.0801 28.4203 Ambient 5.4161 37.1706 176.0921 1.9925
Case Case
Foot 3.2171 13.5708 4.3045 6.7275 Foot 475.8931 5.3294 65.4259 2.3240
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number:74111 Revision 14-Nov-05
Si4684DY_RC
Document Number:74111 Revision 14-Nov-05
www.vishay.com

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