Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si4378DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 2.1646 22.7237 31.7971 23.2083 Ambient 20.8422 47.2729 2.0384 3.7242 Case Case Foot 253.8192 4.1485 6.6629 4.9847 Foot 18.9670 155.1850 257.9792 13.8749
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 73820 Revision 02-Mar-06
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Si4378DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 3.7489 22.2239 32.9041 21.1242 Ambient 12.2646 32.9132 1.1221 1.2290
Case Case
Foot 4.7871 3.9192 6.5521 755.2501 Foot 10.3395 32.2002 127.3779 3.8073
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 73820 Revision 02-Mar-06
Si4378DY_RC
Document Number: 73820 Revision 02-Mar-06
www.vishay.com
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