Drive RSS060P05 Structure Silicon P-channel External dimensi

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Drive RSS060P05 Structure Silicon P-channel External dimensi

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RSS060P05
Drive
RSS060P05
Structure Silicon P-channel External dimensions (Unit
SOP8
1.75
Features Built-in Protection Diode. Small Surface Mount Package (SOP8).
1pin mark
1.27
Applications Power switching converter Inverter
Each lead same dimensions
Packaging dimensions
Package Type RSS060P05 Code Basic ordering unit (pieces) Taping 2500
Absolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol Limits VDSS VGSS ±6.0 -1.6 Tstg +150 Unit
Equivalent circuit
Source Source Source Gate Drain )Drain Drain Drain
Total power dissipation Chanel temperature Range Storage temperature PW10µDuty cycle1% Mounted ceramic board
PROTECTION DIODE BODY DIODE
Thermal resistance
Parameter Chanel ambient Mounted ceramic board Symbol Rth(ch-a) Limits 62.5 Unit
0.4Min.
RSS060P05
Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Gate-source leakage IGSS Drain-source breakdown voltage V(BR) Zero gate voltage drain current IDSS Gate threshold voltage (th) -1.0 Static drain-source on-state (on) resistance Forward transfer admittance Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time (on) Rise time Turn-off delay time (off) Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Typ. 2700 23.0
Max. -2.5 32.2
Unit
Conditions VGS=±20V, VDS=0V -1mA, VGS=0V VDS= -45V, VGS=0V VDS= -10V, -1mA -6A, VGS= -10V -6A, VGS= -4.5V -6A, VGS= -4.0V VDS= -10V, VDS= -10V VGS=0V f=1MHz -25V -3.0A VGS= -10V RL=-8.3 RG=10 -25V VGS= -6.0A RL=4.2 RG=10
Body diode characteristics (Source-Drain)
Parameter Forward voltage
Pulsed
Symbol
Min.
Typ.
Max. -1.2
Unit
Conditions -6A, VGS=0V
RSS060P05
Electrical characteristic curves
VDS= -10V pulsed
1000
VGS= -10V pulsed
1000
Static Drain-Source On-State Resistance RDS(on)
Ta=125oC 75oC 25oC -25oC VGS= -4.5V pulsed Ta=125oC 75oC 25oC -25oC
Drain Currnt
Ta=125oC 75oC 25oC -25oC
Static Drain-Source On-State Resistance RDS(on)
0.01
0.01
0.01
Drain Current Drain Current
Gate-Source Voltage -VGS
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance Drain Current
Fig.3 Static Drain-Source On-State Resistance Drain Current
1000
Static Drain-Source On-State Resistance RDS(on) Static Drain-Source On-State Resistance RDS(on)
VGS= pulsed Ta=125oC 75oC 25oC -25oC
Ta=25oC pulsed
VGS=0V pulsed
Source Current
-6.0A
Ta=125oC 75oC 25oC -25oC
-3.0A
0.01
Gate-Source Voltage -VGS
Drain Current
0.01
Source-Drain Voltage -VSD
Fig.4 Static Drain-Source On-State Resistance Drain Current
Fig.5 Static Drain-Source On-State Resistance Gate-Source Voltage
Fig.6 Source-Current Source-Drain Voltage
10000
Ciss
10000
Ta=25oC VDD= -25V VGS= -10V RG=10 Pulsed
Gate-Source Voltage -VGS
1000
Coss
Switching Time [ns]
Capacitance [pF]
1000
Ta=25oC VDD= -25V -6.0A RG=10 Pulsed
td(off) td(on)
Ta=25oC f=1MHz VGS=0V
Crss
Drain-Source Voltage -VDS
0.01
Drain Current
Total Gate Charge [nC]
Fig.7 Typical capacitance Source-Drain Voltage
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
RSS060P05
Measurement circuits
D.U.T.
td(off) toff
td(on)
Fig.10 Switching Time Test Circuit
Fig.11 Switching Time Waveforms
(Const.) D.U.T.
Charge
Fig.12 Gate Charge Test Circuit
Fig.13 Gate Charge Waveform
Appendix
Notes
technical content pages this document reproduced form transmitted means without prior permission ROHM CO.,LTD. contents described herein subject change without notice. specifications product described this document reference only. Upon actual use, therefore, please request that specifications separately delivered. Application circuit diagrams circuit constants contained herein shown examples standard operation. Please careful attention peripheral conditions when designing circuits deciding upon circuit constants set. data, including, limited application circuit diagrams information, described herein intended only illustrations such devices specifications such devices. ROHM CO.,LTD. disclaims warranty that such devices shall free from infringement third party's intellectual property rights other proprietary rights, further, assumes liability whatsoever nature event such infringement, arising from connected with related such devices. Upon sale such devices, other than buyer's right such devices itself, resell otherwise dispose same, express implied right license practice commercially exploit intellectual property rights other proprietary rights owned controlled ROHM CO., LTD. granted such buyer. Products listed this document antiradiation design.
products listed this document designed used with ordinary electronic equipment devices (such audio visual equipment, office-automation equipment, communications devices, electrical appliances electronic toys). Should intend these products with equipment devices which require extremely high level reliability malfunction with would directly endanger human life (such medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers other safety devices), please sure consult with sales representative advance. About Export Control Order Japan Products described herein objects controlled goods Annex (Item Export Trade Control Order Japan. case export from Japan, please confirm applies "objective" criteria "informed" MITI clause) basis "catch controls Non-Proliferation Weapons Mass Destruction.
Appendix1-Rev1.1

Drive RSS060P05 Structure Silicon P-channel External dimensi

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