12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (M

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12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (M

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RFD3055, RFD3055SM RFP3055
12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs)
JEDEC TO-220AB VIEW
DRAIN (FLANGE) SOURCE DRAIN GATE
February 1994
Features
12A, rDS(ON) 0.150 Temperature Compensating PSPICE Model Peak Current Pulse Width Curve Rating Curve +175oC Operating Temperature
Description
DRAIN (FLANGE)
JEDEC TO-251AA VIEW
SOURCE DRAIN GATE
DRAIN (FLANGE)
RFD3055, RFD3055SM RFP3055 N-Channel power MOSFETs manufactured using MegaFET process. This process, which uses feature sizes approaching those integrated circuits gives optimum utilization silicon, resulting outstanding performance. They were designed applications such switching regulators, switching converters, motor drivers, relay drivers emitter switches bipolar transistors. These transistors operated directly from integrated circuits. RFD3055 supplied JEDEC TO-251AA plastic package, RFD3055SM supplied JEDEC TO-252AA plastic package RFP3055 supplied JEDEC TO-220AB plastic package. space limitations RFD3055 RFD3055SM branded FD3055. When ordering RFD3055SM. entire part number;
JEDEC TO-252AA VIEW
SOURCE DRAIN GATE
Symbol
Developmental type TA49082.
Absolute Maximum Ratings
+25oC), Unless Otherwise Specified RFD3055, RFD3055SM, RFP3055 Refer Peak Current Curve Refer Curve 0.357 +175 UNITS
Drain Source Voltage VDSS Drain Gate Voltage VDGR Gate Source Voltage Drain Current Continuous Pulsed Drain Current Pulsed Avalanche Rating Maximum Avalanche Current Power Dissipation +25oC Derate above +25oC Operating Storage Temperature TSTG,
W/oC
Copyright
Harris Corporation 1994
File Number
3648
Specifications RFD3055, RFD3055SM, RFP3055
Electrical Specifications
+25oC, Unless Otherwise Specified LIMITS PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 0.25mA, VDS, 0.25mA 60V, ±20V 12A, 30V, 2.5, +10V +25oC +150oC 12A, 25V, 1MHz 48V, 12A, TO-251 TO-252 Package TO-220 Package 0.150 UNITS
oC/W oC/W oC/W
Gate-Source Leakage Current Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Plateau Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction Case Thermal Resistance Junction Ambient
IGSS rDS(ON) tD(ON) tD(OFF) tOFF QG(TOT) QG(10) QG(TH) V(PLATEAU) CISS COSS CRSS
Source-Drain Diode Ratings Characteristics
LIMITS PARAMETER Forward Voltage Reverse Recovery Time SYMBOL TEST CONDITIONS 12A, dISD 100A/µs UNITS
RFD3055, RFD3055SM, RFP3055 Typical Performance Curves
+25oC
100µs
NORMALIZED THERMAL RESPONSE (ZJC)
DRAIN CURRENT
0.05 0.02 0.01 SINGLE PULSE
10ms OPERATION THIS AREA LIMITED rDS(ON) DRAIN-TO-SOURCE VOLTAGE
NOTES: DUTY FACTOR: t1/t2 PEAK 10-2 10-1
VDSS 0.01 10-5 10-4 10-3
RECTANGULAR PULSE DURATION
FIGURE SAFE- OPERATING AREA CURVE
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
+25oC PEAK CURRENT CAPABILITY TEMPERATURES ABOVE +25oC DERATE PEAK CURRENT CAPABILITY FOLLOWS: -150
DRAIN CURRENT CASE TEMPERATURE (oC)
TRANSCONDUCTANCE LIMIT CURRENT THIS REGION 10-3 10-2 10-1
PULSE WIDTH (ms)
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT TEMPERATURE
PULSE DURATION 250µs DRAIN CURRENT 4.5V VDS, DRAIN-TO-SOURCE VOLTAGE +25oC ID(ON) STATE DRAIN CURRENT
FIGURE PEAK CURRENT CAPABILITY
PULSE TEST PULSE DURATION 250µs DUTY CYCLE 0.5% -55oC +25oC
+175oC
10.0 GATE-TO-SOURCE VOLTAGE
FIGURE TYPICAL SATURATION CHARACTERISTICS
FIGURE TYPICAL TRANSFER CHARACTERISTICS
RFD3055, RFD3055SM, RFP3055 Typical Performance Curves
(Continued)
VDS, 250µA
PULSE DURATION 250µs, 10V,
NORMALIZED RDS(ON) NORMALIZED VGS(TH)
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED RDS(ON) JUNCTION TEMPERATURE
250µA
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE TEMPERATURE
POWER DISSIPATION MULTIPLIER
NORMALIZED BVDSS
JUNCTION TEMPERATURE (oC) CASE TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE TEMPERATURE
1MHz
FIGURE NORMALIZED POWER DISSIPATION TEMPERATURE DERATING CURVE
VDS, DRAIN SOURCE VOLTAGE BVDSS VGS, GATE-SOURCE VOLTAGE
BVDSS
CAPACITANCE (pF)
CISS
0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS
COSS
CRSS DRAIN-TO-SOURCE VOLTAGE IG(REF) IG(ACT)
IG(REF) 0.24mA TIME (µs) IG(REF) IG(ACT)
FIGURE TYPICAL CAPACITANCE VOLTAGE
FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT. REFER APPLICATION NOTE AN7254 AN7260
RFD3055, RFD3055SM, RFP3055 Typical Performance Curves
(Continued)
IAS, AVALANCHE CURRENT
STARTING +25oC STARTING +150oC
(IAS) (1.3RATED BVDSS VDD) (L/R) [(IAS*R) (1.3 RATED BVDSS VDD) 0.001 0.01
tAV, TIME AVALANCHE (msec)
FIGURE UNCLAMPED INDUCTIVE SWITCHING
Test Circuits
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY WAVEFORMS
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
tD(ON)
tOFF tD(OFF)
PULSE WIDTH
FIGURE RESISTIVE SWITCHING WAVEFORMS
FIGURE RESISTIVE SWITCHING TEST CIRCUIT
RFD3055, RFD3055SM, RFP3055 PSpice Model Listing
Temperature Compensated PSPICE Model RFD3055, RFD3055SM, RFP3055
.SUBCKT RFP3055 0.540e-9 0.540e-9 0.300e-9 DBODY DBDMOD DBREAK DBKMOD DPLCAP DPLCAPMOD EBREAK 67.9 EVTO LDRAIN 1e-9 LGATE 4.61e-9 LSOURCE 4.61e-9 MOS1 MOSMOD M=0.99 MOS2 MOSMOD M=0.01 RBREAK RBKMOD RDRAIN RDSMOD 1e-4 RGATE 7.23 RSCL1 RSLVCMOD 1e-6 RSCL2 RSOURCE RDSMOD 108e-3 RVTO RVTOMOD S1AMOD S1BMOD S2AMOD S2BMOD VBAT ESCL .MODEL DBDMOD (IS=4.33e-14 RS=2.78e-2 TRS1=1.10e-3 TRS2=5.19e-6 CJO=3.94e-10 TT=7.63e-8) .MODEL DBKMOD (RS=0.676 TRS1=1.94e-3 TRS2=-1.09e-6) .MODEL DPLCAPMOD (CJO=0.238e-9 IS=1e-30 N=10) .MODEL MOSMOD NMOS (VTO=4.078 KP=12 IS=1e-30 N=10 TOX=1 L=1u W=1u) .MODEL RBKMOD (TC1=1.06e-3 TC2=-1.92e-6) .MODEL RDSMOD (TC1=5.03e-3 TC2=1.53e-5) .MODEL RSLVCMOD (TC1=2.2e-3 TC2=-5e-6) .MODEL RVTOMOD (TC1=-5.02e-3 TC2=-9.16e-6) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-6.5 VOFF=-3.5) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-6.5) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.50 VOFF=2.50) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=2.50 VOFF=-2.50) .ENDS
NOTE: further discussion PSPICE model consult PSPICE Sub-circuit Power MOSFet Featuring Global Temperature Options; authored William Hepp Frank Wheatley.
10/26/93
DPLCAP RSCL1 RSCL2 DBREAK ESCL RDRAIN RSOURCE RBREAK RVTO VBAT LSOURCE SOURCE MOS1 EBREAK MOS2 DBODY LDRAIN DRAIN
GATE LGATE
RGATE
EVTO
RFD3055, RFD3055SM, RFP3055 TERM.
TO-220AB
LEAD JEDEC TO-220AB PLASTIC PACKAGE INCHES SYMBOL 0.170 0.048 0.030 0.045 0.014 0.590 0.395 0.180 0.052 0.034 0.055 0.019 0.610 0.160 0.410 0.030 0.100 0.200 0.235 0.100 0.530 0.130 0.149 0.102 0.255 0.110 0.550 0.150 0.153 0.112 MILLIMETERS 4.32 1.22 0.77 1.15 0.36 14.99 10.04 4.57 1.32 0.86 1.39 0.48 15.49 4.06 10.41 0.76 2.54 5.08 5.97 2.54 13.47 3.31 3.79 2.60 6.47 2.79 13.97 3.81 3.88 2.84 NOTES
NOTES:
These dimensions within allowable dimensions Rev. JEDEC TO-220AB outline dated 3-24-87. Lead dimension finish uncontrolled Lead dimension (without solder). typically 0.002 inches (0.05mm) solder coating. Position lead measured 0.250 inches (6.35mm) from bottom dimension Position lead measured 0.100 inches (2.54mm) from bottom dimension
Controlling dimension: Inch. Revision dated 1-93.
TO-251AA
TERM. SEATING PLANE
LEAD JEDEC TO-251AA PLASTIC PACKAGE INCHES SYMBOL 0.086 0.018 0.028 0.033 0.205 0.018 0.270 0.250 0.094 0.022 0.032 0.040 0.215 0.022 0.290 0.265 MILLIMETERS 2.19 0.46 0.72 0.84 5.21 0.46 6.86 6.35 2.38 0.55 0.81 1.01 5.46 0.55 7.36 6.73 NOTES
0.090 0.180 0.035 0.040 0.355 0.075 0.045 0.045 0.375 0.090
2.28 4.57 0.89 1.02 9.02 1.91 1.14 1.14 9.52 2.28
NOTES: These dimensions within allowable dimensions Rev. JEDEC TO-251AA outline dated 9-88. Solder finish uncontrolled. Dimension (without solder). typically 0.0006 inches (0.015mm) solder coating. Position lead measured 0.250 inches (6.35mm) from bot-
dimension Position lead measured 0.100 inches (2.54mm) from bottom dimension Controlling dimension: Inch. Revision dated 1-93.
RFD3055, RFD3055SM, RFP3055 Packaging (Continued)
SEATING PLANE
TO-252AA
LEAD JEDEC TO-252AA PLASTIC PACKAGE INCHES SYMBOL
MILLIMETERS 2.19 0.46 0.72 0.84 5.21 4.83 0.46 6.86 6.35 2.38 0.55 0.81 1.01 5.46 0.55 7.36 6.73 NOTES
0.086 0.018 0.028 0.033 0.205 0.190 0.018 0.270 0.250
0.094 0.022 0.032 0.040 0.215 0.022 0.290 0.265
TERM.
0.265 (6.7)
0.090 0.180 0.035 0.040 0.100 0.075 0.025 0.020 0.170 0.045 0.045 0.115 0.090 0.040
2.28 4.57 0.89 1.02 2.54 1.91 0.64 0.51 4.32 1.14 1.14 2.92 2.28 1.01
0.265 (6.7)
0.070 (1.8) 0.118 (3.0) BACK VIEW 0.063 (1.6) 0.090 (2.3) 0.090 (2.3) MINIMUM SIZE RECOMMENDED SURFACE-MOUNTED APPLICATIONS 0.063 (1.6)
NOTES:
These dimensions within allowable dimensions Rev. JEDEC TO-252AA outline dated 9-88. dimensions establish minimum mounting surface terminal Solder finish uncontrolled. Dimension (without solder). typically 0.0006 inches (0.015mm) solder coating. terminal length soldering. Position lead measured 0.090 inches (2.28mm) from bottom dimension Controlling dimension: Inch. Revision dated 6-93.
Harris Semiconductor products sold description only. Harris Semiconductor reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Harris believed accurate reliable. However, responsibility assumed Harris subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Harris subsidiaries.
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general information regarding Harris Semiconductor products, call 1-800-4-HARRIS UNITED STATES Harris Semiconductor 883, Mail Stop 53-210 Melbourne, 32902 TEL: 1-800-442-7747 (407) 729-4984 FAX: (407) 729-5321 EUROPE Harris Semiconductor Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2-724-2111 SOUTH ASIA Harris Semiconductor H.K. Ltd. 13/F Fourseas Building 208-212 Nathan Road Tsimshatsui, Kowloon Hong Kong TEL: (852) 723-6339 NORTH ASIA Harris K.K. Kojimachi-Nakata Bldg. 5-3-5 Kojimachi Chiyoda-ku, Tokyo Japan TEL: (81) 3-3265-7571 TEL: (81) 3-3265-7572 (Sales)

12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (M

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