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2mm InGaAs Photodiode

· · · · Planar Structure Dielectric Passivation High Shunt Resistance High Responsivity

2mm InGaAs Photodiode
FEATURES
· · · · Planar Structure Dielectric Passivation High Shunt Resistance High Responsivity
APPLICATIONS
· · Sensing High Sensitivity Instrumentation
PD2M-0xx Ceramic Sub-Mount
PD2M-1xx TO5 can Package
PRODUCT DESCRIPTION
The PD2M is an InGaAs photodiode with a photosensitive region 2mm in diameter. Applications include sensing and other high sensitivity instrumentation. Class A devices feature very low dark current and high shunt resistance. High reliability is assured through planar semiconductor design and dielectric passivation. The device can be assembled on a ceramic submount or in an hermetic TO5 can. Custom packages are an option.
ELECTRICAL CHARACTERISTICS
Table 1: Electrical Specifications
PARAMETER Dark Current (ID) (1) Capacitance (2) Responsivity at 1310nm Responsivity at 1550nm Rise / Fall time Shunt Resistance (Class A) (2) (1) 1V reverse bias (2) 0V reverse bias MIN 0.80 0.85 5 TYP 55 400 0.90 0.95 60 MAX UNIT nA pF A / W A / W ns M
ELECTRICAL CHARACTERISTICS (cont)
Table 2: Absolute Maximum Ratings
ORDERING INFORMATION
Part Number PD2M-0xx PD2M-1xx Options Custom defined size and electrical layout Package: TO5 Number of pins: 3 Cap: Window, AR / Non-AR coated. Cap plating: Gold or nickel
Please contact Anadigics for the specific part number and pinout that suits your needs
ANADIGICS, Inc.
829 Flynn Road Camarillo, California 93012, U.S.A. Tel: +1 (805) 445-4500 Fax: +1 (805) 445-4502 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com
Rev 1.0