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PD10M

10mm InGaAs Photodiode

PD10M
10mm InGaAs Photodiode
FEATURES
· · · · Planar Structure Dielectric Passivation High Shunt Resistance High Responsivity
APPLICATIONS
· · Sensing High Sensitivity Instrumentation PD10M-1xx Ceramic Flat Pack
PRODUCT DESCRIPTION
The PD10M is an InGaAs photodiode with a 10mm photosensitive region. The device is offered in both circular (10mm in diameter) and square (10mm edge length) formats. Applications include sensing and other high sensitivity instrumentation. Class A devices feature very low dark current and high shunt resistance. High reliability is assured through planar semiconductor design and dielectric passivation. The device is available in a ceramic flat pack. Custom packages are an option.
ELECTRICAL CHARACTERISTICS
Table 1: Electrical Specifications
PARAMETER Dark Current (ID) (1) Responsivity at 1310nm Responsivity at 1550nm Shunt Resistance (Class A) (2) (1) 0.3V reverse bias (2) 0V reverse bias MIN 0.80 0.85 60 TYP 2 0.90 0.95 MAX UNIT A A / W A / W K
PD10M
ELECTRICAL CHARACTERISTICS (cont)
Table 2: Absolute Maximum Ratings
ORDERING INFORMATION
Part Number PD10M-0xx PD10M-1xx Options Custom defined size and electrical layout Ceramic flat pack
Please contact Anadigics for the specific part number and pinout that suits your needs
ANADIGICS, Inc.
829 Flynn Road Camarillo, California 93012, U.S.A. Tel: +1 (805) 445-4500 Fax: +1 (805) 445-4502 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com
Rev 1.0