Macronix NBit Memory Family [x8/x16] SINGLE PAGE MODE eLiteFlashM

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Macronix NBit Memory Family [x8/x16] SINGLE PAGE MODE eLiteFlashM

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MX26F640J3
Macronix NBit Memory Family
[x8/x16] SINGLE PAGE MODE eLiteFlashMEMORY
FEATURES
3.0V 3.6V operation voltage Block Structure 128Kbyte Erase Blocks Fast random page mode access time 100/25 Read Access Time Page Depth: 8-word 128-bit Protection Register 64-bit Unique Device Identifier 64-bit User Programmable Cells 32-Byte Write Buffer us/byte Effective Programming Time Enhanced Data Protection Features Absolute Protection with VPEN Flexible Block Locking Block Erase/Program Lockout during Power Transitions
Software Feature
Support Common Flash Interface (CFI) eLiteFlashmemory device parameters stored device provide host system access.
Hardware Feature
Select byte address when device byte mode. used word mode. Indicates status internal state machine. VPEN Erase /Program/ Block Lock enable. VCCQ output buffer power supply, control device output voltage.
Performance
power dissipation typical 15mA active current page mode read 80uA/(max.) standby current High Performance Block erase time: typ. Byte programming time: 210us typ. Block programming time: 0.8s typ. (using Write Buffer Command) Program/Erase Endurance cycles: cycles
Packaging
56-Lead TSOP 64-ball
Technology
0.25u Macronix NBitFlash Technology
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GENERAL DESCRIPTION
MXIC's MX26F640J3 series eLiteFlashmemory most advance bits/cell Nbit technology, double storage capacity memory cell. device provide high density eLiteFlashmemory memory solution with reliable performance most cost-effective. device organized bits bits output bus. device packaged 56-Lead TSOP 64ball CSP. designed reprogrammed erased system standard EPROM programmers. device offers fast access time allowing operation high-speed microprocessors without wait states. eliminate contention, device separate chip enable (CE0, CE1, CE2) output enable (OE) controls. device augment EPROM functionality with incircuit electrical erasure programming. device uses command register manage this functionality. MXIC's Nbit technology reliably stores memory contents even after specific erase program cycles. MXIC cell designed optimize erase program mechanisms utilizing dielectric's character trap release charges from layer. device uses 3.0V 3.6V supply perform High Reliability Erase auto Program/Erase algorithms. highest degree latch-up protection achieved with MXIC's proprietary non-epi process. Latch-up protection proved stresses milliamps address data from
CONFIGURATION TSOP (14mm 20mm)
VPEN RESET VCCQ BYTE
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Ball (10x13x1.2mm, 1.0mm-ball pitch)
VPEN
RESET
BYTE
VCCQ
10mm
Notes: Don't (DU) pins refer pins that should connected.
DESCRIPTION
SYMBOL A1~A22 Q0~Q15 RESET NAME Byte Select Address Address Input Data Inputs/Outputs Write Enable Input Output Enable Input Reset/Power Down mode SYMBOL BYTE VPEN VCCQ NAME STATUS Byte Mode Enable ERASE/PROGRAM/BLOCK Lock Enable Output Buffer Power Supply Device Power Supply Device Ground Connected Internally Don't
CE0, CE1, Chip Enable Input
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BLOCK DIAGRAM
RESET
CONTROL INPUT LOGIC
PROGRAM/ERASE HIGH VOLTAGE
WRITE STATE MACHINE (WSM)
STATE REGISTER ARRAY
ARRAY SOURCE
Y-PASS GATE
X-DECODE
ADDRESS LATCH
A0-A22
BUFFE
COMMAND DATA DECODE
Y-DECODE
SENSE AMPLIFIE
DATA
COMMAND DATA LATCH
PROGRAM DATA LATCH
Q0-Q15
BUFFE
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Figure Block Architecture
eLiteFlashmemory reads erases writes in-system local CPU. cycles from eLiteFlashmemory conform standard microprocessor cycles.
A[22-0]: 64Mbit A[22-1]: 64Mbit
7FFFFF 7E0000 128-Kbyte Block
3FFFFF 3F0000 64-Kword Block
3FFFFF 3E0000 128-Kbyte Block 1FFFFF 1F0000
64-Kword Block
Mbit
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03FFFF 020000 01FFFF 000000 128-Kbyte Block 128-Kbyte Block 01FFFF 010000 00FFFF 000000
64-Kword Block 64-Kword Block
Byte Mode (x8)
Word Mode (x16)
Table Chip Enable Truth Table
DEVICE Enabled Disabled Disabled Disabled Enabled Enabled Enabled Disabled
NOTE: Single-chip applications, strapped GND.
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Table Operations
Command Sequence Read Array Output Standby RESET Read Read Disable Mode/ Query Power Down Mode Read Read Status Status (WSM off) (WSM Write
Notes RESET
4,5,6 Enabled Figure Enabled
6,10,11 Enabled VPENH
CE0,CE1,CE2(1) Enabled Enabled Disabled Address VPEN High
Enabled Enabled
Table Note Data
Data High
High Note
(default mode)
High
High High
High
Q7=Data Data Q15-8=High Q6-0=High
NOTES: Table page valid configurations. should never enabled simultaneously. refers Q0-Q7 BYTE Q0-Q15 BYTE high. Refer Characteristics. When VPEN VPENLK memory contents read, altered. control address pins, VPENLK VPENH VPEN Characteristics VPENLK VPENH voltages. default mode, when executing internal block erase, program, lock-bit configuration algorithms. when busy, reset/power-down mode. High will with external pull-up resistor. Section "Read Identifier Codes" read identifier code data. Section "Read Query Mode Command" read query data. 10.Command writes involving block erase, program, lock-bit configuration reliably executed when VPEN= VPENH within specification. 11.Refer Table page valid during write operation.
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STANDBY
When CE0, disable device (see table1) place standby mode. power consumption this device reduced. Data input/output highimpedance(High-Z) state. memory deselected during block erase, program lock-bit configuration, internal control circuits remain active device consume normal active power until operation completes.
FUNCTION
device includes on-chip program/erase control circuitry. Write State Machine (WSM) controls block erase byte/word/page program operations. Operational modes selected commands written Command User Interface (CUI). Status Register indicates status when successfully completes desired program block erase operation.
POWER-DOWN READ
device three read modes, which accesses memory array, Device Identifier Status Register independent VPEN voltage. appropriate read command required written CUI. Upon initial device powerup after exit from powerdown, device automatically resets read array mode. read array mode, level input CE0, CE1, high level input RESET address signals address inputs (A22-A0) output data addressed location data input/ output (Q15~Q0). When reading information read array mode, device defaults asynchronous page mode. this state, data internally read stored high-speed page buffer. A2:0 addresses data page buffer. page size words bytes. Asynchronous word/byte mode supported with additional commands required. When RESET device powerdown mode power consumption substantially around 25uA. During read modes, memory deselected data input/output highimpedance(High-Z) state. return from power down mode requires RESET VIH. After return from powerdown, reset Read Array Status Register value 80H. During block erase program lock-bit configuration modes, RESET will abort either operation. Memory array data block being altered become invalid. default mode, transitions remains maximum time tPLPH+tPHRH until reset operation complete. Memory contents being altered longer valid; data partially corrupted after program partially altered after erase lockbit configuration. Time tPHWL required after RESET goes logic-high (VIH) before another command written.
WRITE
Writes enables reading memory array data, device identifiers reading clearing Status Register when VPEN=VPENH block erasure program lock-bit configuration. written when device enable, active high level. Address data latched earlier rising edge Standard micro-processor write timings used.
READ QUERY
read query operation outputs block status information, (Common Flash Interface) string, system interface information, device geometry information MXIC extended query information.
OUTPUT DISABLE
When VIH, output from devices disabled. Data input/output high-impedance(High-Z) state.
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COMMAND DEFINITIONS
Device operations selected writing specific address data sequences into CUI. Table defines valid register command sequences. When VPEN<VPENLK only read operations from status register, query, indentifier code blocks enabled. When VPEN=VPENH enables block erase program lock-bit configuration operations.
Table Command Definitions
Command Sequence Notes Write Cycles Req'd First Operation(2) Data(4,5) Second Operation(2) Read Query Address(3) Data(4,5) Write Cycles Address(3) Write Read Array Read Write Read Write Read Read Query Read Status Write Read Write Clear Status Write Buffer 7,8,9 Write Write Word/byte Sector Program 10,11 Write 40H/10H Write Erase 9,10 Write Write
Register Register
Command Sequence
Configuration
Sector Lock-Bit
Clear Sector Lock-Bit
Protection Program
Notes Write Cycles Req'd First Operation(2) Data(4,5) Second Operation(2) Write Cycle Address(3) Data(4,5) Write Cycle Address(3) Write Write Write Write
Write Write Write Write
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NOTES: operations defined Table valid address within device. Address within block. Identifier Code Address: Figure Table Query database Address. Address memory location programmed. Data written read configuration register. This data presented device 16-1 other address inputs ignored. Data read from Identifier Codes. Data read from Query database. Data read from status register. Table description status register bits. Data programmed location Data latched rising edge Configuration Code. upper byte data (Q8-Q15) during command writes "Don't Care" operation. Following Read Identifier Codes command, read operations access manufacturer, device block lock codes. Section read identifier code data. running, only valid; Q15-Q8 Q6-Q0 float, which places them high impedance state. After Write Buffer command issued check make sure buffer available writing. number bytes/words written Write Buffer where byte/word count argument. Count ranges this device byte mode word mode 0000H =000FH. third consecutive cycles, determined writing data into Write Buffer. Confirm command (D0H) expected after exactly write cycles; other command that point sequence aborts write buffer operation. Please Figure "Write Buffer Flowchart" additional information. write buffer erase operation does begin until Confirm command (D0h) issued. 10.Attempts issue block erase program locked block. 11.Either recognized byte/word program setup. 12.The clear block lock-bits operation simultaneously clears block lock-bits.
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Figure Device Identifier Code Memory
Word Address 3FFFFF
A[22-1]: Mbit
Block Reserved Future Implementation
3F0003 Block Lock Configuration 3F0002 Reserved Future Implementation 3F0000 3EFFFF (Block through Block Reserved Future Implementation 1F0003 Block Lock Configuration 1F0002 Reserved Future Implementation 1F0000 1EFFFF 01FFFF Reserved Future Implementation 010003 010002 Block Lock Configuration Reserved Future Implementation Block Reserved Future Implementation 000004 000003 000002 000001 Manufacturer Code 000000 Block Lock Configuration Device Code (Block through Block
010000 00FFFF
NOTE: used either mode when obtaining these identifier codes. Data always given byte mode (upper byte contains 00h).
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Read Array Command
device Read Array mode initial device power after exit from power down, writing Command User Interface. read configuration register defaults asynchronous read page mode. device remains enabled reads until another command written. Read Array command functions independently VPEN voltage.
Read Query Mode Command
This section defines data structure "Database" returned Common Flash Interface (CFI) Query command. System software should parse this structure gain critical information such block size, density, x8/x16, electrical specifications. Once this information been obtained, software will know which command sets enable eLiteFlashmemory writes, block erases, otherwise control eLiteFlashmemory component.
Query Structure Output
Query Database allows system software gain information controlling eLiteFlashmemory component. This section describes device CFI-compliant interface that allows host system access Query data. Query data always presented lowest-order data outputs 0-7) only. numerical offset value address relative maximum width supported device. this family devices, Query table device starting address 10h, which word address devices. word-wide (x16) device, first bytes Query structure, ASCII, appear byte word addresses 11h. This CFI-compliant device outputs data upper bytes. Thus, device outputs ASCII byte high byte 8-15 Query addresses containing more bytes information, least significant data byte presented lower address, most significant data byte presented higher address.
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following tables, addresses data represented hexadecimal notation, suffix been dropped. addition, since upper byte word-wide devices always "00h"," leading "00" been dropped from table notation only lower byte value shown. device outputs assumed have upper byte this mode.
Table Summary Query Structure Output Function Device Mode
Device Type/Mode Query start location maximum device width addresses Query data with maximum device width addressing Offset Code 0051 0052 0059 ASCII Value Query data with byte addressing Offset Code ASCII Value "Null"
device mode device mode
NOTE: system must drive lowest order addresses access device's array data when device configured mode. Therefore, word addressing, where these lower addresses toggled system, "Not Applicable" x8-configured devices.
Table Example Query Structure Output x16- x8-Capable Device
Offset A15-A0 0010h 0011h 0012h 0013h 0014h 0015h 0016h 0017h 0018h Word Addressing Code Value 0051 0052 0059 P_IDLO PrVendor P_IDHI PrVendor TblAdr A_IDLO AltVendor A_IDHI Offset A7-A0 Byte Addressing Code Value P_IDLO PrVendor P_IDLO P_IDHI
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Query Structure Overview
Query command causes eLiteFlashmemory component display Common Flash Interface (CFI) Query structure "database". structure sub-sections address locations summarized below.
Table Query Structure
Offset (BA+2)h 04-0Fh Block Status Register Reserved Query Identification String System Interface Information Device Geometry Definition Primary MXIC-Specific Extended Query Table Sub-Section Name Description Manufacturer Code Device Code Block-Specific Information Reserved Vendor-Specific Information Reserved Vendor-Specific Information Command Vendor Data Offset eLiteFlashmemory Device Layout Vendor-Defined Additional Information Specific Primary Vendor Algorithm
NOTES: Refer Query Structure Output section offset detailed definition offset address function device width mode. Block Address beginning location (i.e., 02000h block beginning location when block size Kbyte). Offset defines which points Primary MXIC-Specific Extended Query Table.
Block Status Register
block status register indicates whether erase operation completed successfully whether given block locked accessed eLiteFlashmemory program/erase operations.
Table Block Status Register
Offset (BA+2)h Length Description Block Lock Status Register BSR.0 Block Lock Status Unlocked Locked 1-7: Reserved Future BA+2: (bit 1-7): NOTE: beginning location Block Address (i.e., 008000h block (64-KB block) beginning location word mode). BA+2: (bit Address BA+2: Value
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Query Identification String
Query Identification String provides verification that component supports Common Flash Interface specification. also indicates specification version supported vendor-specified command set(s).
Table Identification
Offset Length Description Query-unique ASCII string "QRY" Add. Code Value
Primary vendor command control interface code. 16-bit code vendor-specified algorithms Extended Query Table primary algorithm address Alternate vendor command control interface code. 0000h means second vendor-specified algorithm exists Secondary algorithm Extended Query Table address. 0000h means none exists
System Interface Information
following device information optimize system interface software.
Table System Interface Information
Offset Length Description logic supply minimum program/erase voltage bits bits volts logic supply maximum program/erase voltage bits bits volts [programming] supply minimum program/erase voltage bits bits volts [programming] supply maximum program/erase voltage bits bits volts such that typical single word program time-out 2nus such that typical max. buffer write time-out 2nus such that typical block erase time-out 2nms such that typical full chip erase time-out 2nms such that maximum word program time-out times typical such that maximum buffer write time-out times typical such that maximum block erase time-out times typical such that maximum chip erase time-out times typical Add. Code Value
3.0V
0.0V
0.0V 128us 128us
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Device Geometry Definition
This field provides critical details eLiteFlashmemory device geometry.
Table Device Geometry Definition
Offset Length Description such that device size number bytes eLiteFlashmemory device interface: async(28:00,29:00), async(28:01,29:00), x8/x16 async(28:02,29:00) such that maximum number bytes write buffer Number erase block regions within device: means erase blocking; device erases "bulk" specifies number device partition regions with more contiguous same-size erase blocks Symmetrically blocked partitions have blocking region Partition size (total blocks) (individual block size) Erase Block Region Information bits 0-15 number identical-size erase blocks bits 16-31 region erase block(s) size bytes Code Table Below x8/x16
Device Geometry Definition
Address
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Primary-Vendor Specific Extended Query Table
Certain eLiteFlashmemory features commands optional. Primary Vendor-Specific Extended Query table specifies this other similar information.
Table Primary Vendor-Specific Extended Query
Offset(1) Length P=31h (P+0)h (P+1)h (P+2)h (P+3)h (P+4)h (P+5)h (P+6)h (P+7)h (P+8)h Description Add. (Optional eLiteFlash memory Features Commands) Code Primary extended query table Unique ASCII string "PRI" Major version number, ASCII Minor version number, ASCII Optional feature command support (1=yes, 0=no) bits 9-31 reserved; undefined bits "0". then another field optional features follows bit-30 field. Chip erase supported Reserved Reserved Legacy lock/unlock supported 1(1) Queued erase supported Instant Individual block locking supported Protection bits supported Page-mode read supported Synchronous read supported Reserved Value
Yes(1)
(P+9)h
(P+A)h (P+B)h
(P+C)h
(P+D)h
Block status register mask bits 2-15 Reserved; undefined bits Block Lock-Bit Status register active Block Lock-Down Status active logic supply highest performance program/erase voltage bits value bits value volts optimum program/erase supply voltage bits value bits value volts
3.3V
0.0V
NOTE: Future devices support described "Legacy Lock/Unlock" function. Thus would have value "0".
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Table Protection Register Information
Offset(1) Length P=31h (P+E)h Description (Optional eLiteFlashmemory Features Commands) Number Protection register fields JEDEC space. "00h," indicates that protection bytes available Protection Field Protection Description This field describes user-available Time Programmable (OTP) protection register bytes. Some pre-programmed with device-unique serial numbers. Others user-programmable. Bits 0-15 point protection register lock byte, section's first byte. following bytes factory pre-programmed user-programmable. bits Lock/bytes JEDEC-plane physical address bits 8-15 Lock/bytes JEDEC-plane physical high address bits 16-23 such that factory pre-programmed bytes bits 24-31 such that user-programmable bytes Add. Code Value
(P+F)h (P+10)h (P+11)h (P+12)h
NOTE: variable pointer which defined offset 15h.
Table Page Read Information
Offset(1) Length Description Add. P=31h (Optional eLiteFlash memory Features Commands) Page Mode Read capability bits such that value represents number (P+13)h read-page bytes. offset device word width determine page-mode data output width. indicates read page buffer. (P+14)h Number synchronous mode read configuration fields that follow. indicates burst capability. (P+15)h Reserved future NOTE: variable pointer which defined offset 15h. Code Value
byte
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DEVICE OPERATION SILICON READ
Silicon Read mode allows reading binary code from device will identify manufacturer type. This mode intended programming equipment purpose automatically matching device programmed with corresponding programming algorithm. This mode functional over entire temperature range device. activate this mode, cycle "Silicon Read" command requested. (The command sequence illustrated Table During "Silicon Read" Mode, manufacturer's code (MXIC=C2H) read setting A0=VIL device identifier read setting A0=VIH. terminate operation, necessary write read command. "Silicon Read" command functions independently VPEN voltage. This command valid only when off.
Table MX26F640J3 Silicon Codes Verify Sector Protect Code
Type Manufacture Code Device Code Block Lock Configuration Block Unlocked Block Locked Reserved Future Address 00000 00001 X0002 DQ0=0 DQ0=1 DQ1-7 Code (HEX) (00)
Notes: lowest order address line selects specific blocks lock configuration code.
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Table Status Register Definitions
High Symbol When Status Busy? SR.7 WRITE STATE MACHINE STATUS SR.6 RESERVED SR.5 ERASE CLEAR LOCK-BITS STATUS PROGRAM LOCK-BIT STATUS PROGRAMMING VOLTAGE STATUS RESERVED DEVICE PROTECT STATUS RESERVED Block Lock-Bit Detected, Operation Abort Unlock Definition Notes Ready Busy
SR.4 SR.3
Successful Block Erase Clear Lock-Bits Error Setting Lock-Bit Successful Block Lock Programming Voltage Programming Voltage Detected, Operation Aborted
Error Block Erasure Clear Lock-Bits
SR.2 SR.1 SR.0
Notes Check SR.7 determine block erase, program, lock-bit configuration completion. SR.6-SR.0 driven while SR.7 both SR.5 SR.4 after block erase lock-bit configuration attempt, improper command sequence entered. SR.3 does provide continuous programming voltage level indication. interrogates indicates programming voltage level only after Block Erase, Program, Block Lock-Bit, Clear Block Lock-Bits command sequences. SR.1 does provide continuous indication block lock-bit values. interrogates block lock-bits only after Block Erase, Program, Lock-Bit configuration command sequences. informs system, depending attempted operation, block lock-bit set. Read block lock configuration codes using Read Identifier Codes command determine block lock-bit status. SR.0 reserved future should masked when polling status register.
Table Extended Status Register Definitions
High Symbol When Status Busy? XSR.7 WRITE BUFFER STATUS XSR.6- RESERVED XSR.0 Definition Notes Write buffer available Write buffer available
Notes: After Buffer-Write command, XSR.7 indicates that Write Buffer available. XSR.6-XSR.0 reserved future should masked when polling status register.
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WRITE BUFFER COMMAND
program device, Write Buffer command issue first. variable number bytes, buffer size, loaded into buffer written eLiteFlashmemory device. First, Write Buffer Setup command issued along with Block Address (see Figure ,"Write Buffer Flowchart" page26). After command issued, extended Status Register (XSR) read when VIL. XSR.7 indicates Write Buffer available. buffer available, number words/bytes program written device. Next, start address given along with write buffer data. Subsequent writes provide additional device addresses data, depending count. After last buffer data given, Write Confirm command must issued. beginning copy buffer data eLiteFlashmemory array. error occurs while writing, device will stop writing, status register SR.4 will indicate program failure. internal verify only detects errors that successfully program program error detected, status register should cleared. time SR.4 and/or SR.5 set, device will accept more Write Buffer commands. Reliable buffered writes only occur when valid VPEN VPENH. Also, successful programming requires that corresponding block lock-bit reset.
READ STATUS REGISTER COMMAND
Status Register read after writing Read Status Register command Command User Interface. Also, after starting internal operation device Read Status Register mode automatically. contents Status Register latched later falling edge first edge CE0, CE1, that enables device must toggle device must disable before further reads update status register latch. Read Status Register command functions independently VPEN voltage.
CLEAR STATUS REGISTER COMMAND
Erase Status, Program Status, Block Status bits protect status Write State Machine only reset Clear Status Register command 50H. These bits indicates various failure conditions.
BLOCK ERASE COMMAND
Automated block erase initiated writing Block Erase command followed Confirm command D0H. address within block erased required (erase changes block data FFH). Block preconditioning, erase, verify handled internally (invisible system). detect block erase completion analyzing output status register SR.7. Toggle update status register. remains read status register mode until command issued. Also, reliable block erasure only occur when valid VPEN VPENH.
BYTE/WORD PROGRAM COMMANDS
Byte/Word program executed two-command sequence. Byte/Word Program Setup command written Command Interface, followed second write specifying address data written. controls program pulse application verify operation. detect completion program event analyzing status register SR.7. byte/word program attempted while VPEN_V PENLK, status register bits SR.4 SR.3 will "1". Successful byte/word programs require that corresponding block lock-bit cleared. byte/ word program attempted when corresponding block lockbit set, SR.1 SR.4 will "1".
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Read Configuration
device will support both asynchronous page mode standard word/byte reads. configuration required. Status register identifier only support standard word/byte single read operations.
Table Read Configuration Register Definition
16(A16) Notes Read mode configuration effects reads from eLiteFlashmemory array. Status register, query, identifier reads support standard word/byte read cycles. These bits reserved future use. these bits "0".
RCR.16 READ MODE (RM) Standard Word/Byte Reads Enabled (Default) Page-Mode Reads Enabled RCR.15-1= RESERVED FUTURE ENHANCEMENTS
Configuration Command
Status (STS) configured different states using Configuration command. Once been configured, remains that configuration until another configuration command issued asserted low. Initially, defaults RY/BY operation where RY/BY indicates that state machine busy. RY/BY high indicates that state machine ready operation. Table "Configuration Coding Definitions" page displays possible configurations. reconfigure Status (STS) other modes, Configuration command given followed desired configuration code. three alternate configurations pulse mode system interrupt described below. these configurations, controls Erase Complete interrupt pulse, controls Program Complete interrupt pulse. Supplying configuration code with Configuration command resets default RY/BY level mode. possible configurations their usage described Table "Configuration Coding Definitions" page Configuration command only given when device busy. Check SR.7 device status. invalid configuration code will result both status register bits SR.4 SR.5 being "1". When configured pulse modes, pulses with typical pulse width
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Table Configuration Coding Definitions
Reserved Pulse Program Complete Pulse Erase Compete
bits7-2 Reserved Configuration Codes default, level mode RY/BY (device ready) indication pulse Erase complete pulse Program complete pulse Erase Program Complete Configuration Codes 01b, 10b, pulse mode such that pulses then high when operation indicated given configuration completed. Configuration Command Sequences configuration (masking bits 00h) follows: Default RY/BY level mode: B8h, (Erase Interrupt): B8h, Pulse-on-Erase Complete (Program Interrupt): B8h, Pulse-on-Program Complete ER/PR (Erase Program Interrupt): B8h, Pulse-on-Erase Program Complete
reserved future use. default (Q1-Q RY/BY, level mode used control HOLD memory controller prevent accessing eLiteFlashmemory subsystem while eLiteFlashmemory device's busy. configuration INT, pulse mode used generate system interrupt pulse when eLiteFlashmemory device array completed Block Erase. Helpful reformatting blocks after file system free space reclamation "cleanup" configuration INT, pulse mode -used generate system interrupt pulse when eLiteFlashmemory device array complete Program operation. Provides highest performance servicing continuous buffer write operations. configuration ER/PR INT, pulse mode -used generate system interrupts trigger servicing eLiteFlashmemory arrays when either erase program operations completed when common interrupt service routine desired.
NOTE: When device configured pulse modes, pulses with typical pulse width
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tion. return read array mode, write Read Array command (FFH).
Block Lock-Bit Commands
This device provided block lock-bits, lock unlock individual block. block lock-bit, cycle Block Lock-Bit command requested. This command invalid while running. Writing block lock-bit command followed confirm command appropriate block address. After command written, device automatically outputs status register data when read. detect completion lock-bit event analyzing output status register SR.7. Also, reliable operations occur only when VPEN valid. With VPEN _VPENLK lock-bit contents protected against alteration.
Programming Protection Register
protection register bits programmed using two-cycle Protection Program command. 64-bit number programmed bits time word-wide parts eight bits time byte-wide parts. First write Protection Program Setup command, C0H. next write device will latch address data program specified location. attempt address Protection Program commands outside defined protection register address space will result status register error. Attempting program locked protection register segment will result status register error.
Clear Block Lock-Bits Command
block lock-bits clear Clear Block LockBits command. This command invalid while running. Clear block lock-bits, cycle command requested device automatically outputs status register data when read. detect completion clear block lock-bits event analyzing output status register SR.7. clear block lock-bits operation aborted transiting valid range, block lock-bit values left undetermined state. repeat clear block lock-bits required initialize block lock-bit contents known values.
Locking Protection Register
user-programmable segment protection register lockable programming PR-LOCK location this location programmed MXIC factory protect unique device number. using Protection Program command program "FFFD" PR-LOCK location. After these bits have been programmed, further changes made values stored protection register. Protection Program commands locked section will result status register error. Protection register lockout state reversible.
Protection Register Program Command
device offer 128-bit protection register increase security system design. 128-bits protection register divided into 64-bit segments. programmed factory with unique 64-bit number, which unchangeable. other left blank customer designers program desired. Once customer segment programmed, locked prevent reprogramming.
TRANSITIONS
Block erase, program, lock-bit configuration guaranteed falls outside specified operating ranges. latches commands issued system software altered transitions, actions. state read array mode upon power-up, after exit from power-down mode, after transitions below VLKO.
Reading Protection Register
protection register read identification read mode. device switched this mode writing Read Identifier command 90H. Once this mode, read cycles from addresses retrieve specified informa-
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Figure Protection Register Memory
Word Address
A[22 -1]: Mbit
Words User Programmed Words Factory Programmed Word Lock
NOTE: used mode when accessing protection register (See Table addressing). mode used (See Table addressing).
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Table Word-Wide Protection Register Addressing
Word LOCK Both Factory Factory Factory Factory User User User User
NOTE: address lines specified above table must when accessing Protection Register, i.e., A22-A9
Table Byte-Wide Protection Register Addressing
Word LOCK LOCK Both Both Factory Factory Factory Factory Factory Factory Factory Factory User User User User User User User User
NOTE: address lines specified above table must when accessing Protection Register, i.e., A22-A9
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Figure Write Buffer Flowchart
Start
Command Cycle Issue Write-to-Buffer Command Address=Any address block Data=0xE8
Check Ready Status Read Status Register Command required Perform read operation Read Ready Status signal
D7=1?
Write Buffer Time-Out
Write Word Count Address=Any address block Data=word count Valid range=0x0 thru 0x1F
Write Buffer Data Fill write buffer word count Address=Address(es) within buffer range Data=Data written
Confirm Cycle Issue Confirm Command Address=Any address block Data=0xD0
Read Status Register Status Register Flowchart
Errors?
Error-Handler User-defined routine
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Figure Status Register Flowchart
Start
Command Cycle Issue Status Register Command Address device address Data 0x70
Data Cycle Read Status Register SR[7:0]
Set/Reset
Erase Suspend Suspend/Resume Flowchart
Program Suspend Suspend/Resume Flowchart
Error Command Sequence
Error Erase Failure
Error Program Failure
Reset user Clear Status Register Command
Error VPENLK
Error Block Locked
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Figure Byte/Word Programming Flowchart
Command Comments Operation Write Setup Byte/ Data=40H Word Program Addr=Location Programmed Write Byte/Word Data=Data Program Programmed Addr=Location Programmed Read Status Register Data (Note Standby Check SR.7 1=WSM Ready 0=WSM Busy Toggling (low high low) updates status register. This done place issuing Read Status Register command. Repeat subsequent programming operations. full status check done after each program operation, after sequence programming operations. Write after last program operation place device read array mode. Command Operation Standby Comments
Start
Write 40H, Address
Write Data Address
Read Status Register
SR.7=
Full Status Check Desired
Byte/Word Program Complete
FULL STATUS CHECK PROCEDURE
Read Status Register Data (See Above)
SR.3=
Range Error
SR.1=
Device Protect Error
SR.4=
Programming Error
Byte/Word Program Successful
Check SR.3 1=Programming Voltage Error Detect Standby Check SR.1 1=Device Protect Detect RP=VIH, Block Lock-Bit Only required systems Standby Check SR.4 1=Programming Error Toggling (low high low) updates status register. This done place issuing Read Status Register command. Repeat subsequent programming operations. SR.4, SR.3, SR.1 only cleared Clear Status Register Command cases where multiple location programmed before full status checked. error detected, clear status register before attempting retry other error recovery.
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Figure Block Erase Flowchart
Start
Write Block Address
Write Confirm Block Address
Read Status Register
SR.7=1
Full Status Check Desired
Erase eLiteFlashmemory Block(s) Completed
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Figure Block Lock-Bit Flowchart
Start
Write 60H, Block Address
Write 01H, Block Address
Read Status Register
SR.7=1
Full Status Check Desired
Lock-Bit Completed
FULL STATUS CHECK PROCEDURE
Read Status Register Data (See Above)
SR.3=0
Voltage Range Error
SR.4,5=1
Command Sequence Error
SR.4=0
Lock-Bit Error
Lock-Bit Successful
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Figure Clear Lock-Bit Flowchart
Start
Write
Write
Read Status Register
SR.7=1
Full Status Check Desired
Lock-Bit Completed
FULL STATUS CHECK PROCEDURE
Read Status Register Data (See Above)
SR.3=0
Voltage Range Error
SR.4,5=1
Command Sequence Error
SR.5=0
Clear Block Lock-Bits Error
Clear Block Lock-Bit Successful
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Figure Protection Register Programming Flowchart
Start
Write (Protection Reg. Program Setup)
Write Protect. Register Address/Data
Read Status Register
SR.7=1
Full Status Check Desired
Program Completed
FULL STATUS CHECK PROCEDURE
Read Status Register Data (See Above)
SR.3, SR.4=
VPEN Range Error
SR.1, SR.4=
Protection Register Programming Error
SR.1, SR.4=
Attempted Program Locked Register-Aborted
Program Successful
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OPERATING RATINGS
Commercial Devices Ambient Temperature +70° Supply Voltages full voltage range. .+3.0
ABSOLUTE MAXIMUM RATINGS
Storage Temperature Plastic Packages -65oC +150oC Ambient Temperature with Power Applied. -65oC +125oC Voltage with Respect Ground (Note -0.5 +4.0 RESET (Note .-0.5 +12.5 other pins (Note -0.5 +0.5 Output Short Circuit Current (Note Notes: Minimum voltage input pins -0.5 During voltage transitions, input pins overshoot -2.0 periods Figure Maximum voltage input pins +0.5 During voltage transitions, input pins overshoot +2.0 periods Figure Minimum input voltage pins RESET -0.5 During voltage transitions RESET overshoot -2.0 periods Figure more than output shorted ground time. Duration short circuit should greater than second. Stresses above those listed under "Absolute Maximum Ratings" cause permanent damage device. This stress rating only; functional operation device these other conditions above those indicated operational sections this data sheet implied. Exposure device absolute maximum rating conditions extended periods affect device reliability.
Operating ranges define those limits between which functionality device guaranteed.
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Characteristics
Symbol Parameter Input Load Current Output Leakage Current Notes Unit Test Conditions Max; VCCQ VCCQ VCCQ Max; VCCQ VCCQ VCCQ CMOS Inputs, Max, ICC1 Standby Current 1,2,3 0.71 Device disabled (see table RESET=VCCQ±0.2V Inputs, VCC=VCC max, Device disable (see table RESET=VIH ICC2 Power-Down Current RESET=GND±0.2V IOUT(STS)=0mA CMOS Inputs, VCC=VCC Max, VCCQ=VCCQ ICC3 Page Mode Read Current Device enabled (see Table f=5MHz, IOUT=0mA CMOS Inputs, VCC=VCC Max, VCCQ=VCCQ ICC5 ICC6 Program Lock-Bit Current Block Erase Clear Block Lock-Bits Current Device enabled (see Table f=33MHz, IOUT=0mA CMOS Inputs, VPEN=VCC Inputs, VPEN=VCC CMOS Inputs, VPEN=VCC Inputs, VPEN=VCC
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Characteristics, Continued
Symbol Parameter Input Voltage Input High Voltage Notes -0.5 VCCQ+0.5 0.85 VCCQ VCCQ-0.2 Unit Test Conditions
Output Voltage
Output High Voltage
VCCQ=VCCQ2/3 IOL=2mA VCCQ=VCCQ2/3 IOL=100uA VCCQ=VCCQ IOH=-2.5mA VCCQ=VCCQ IOH=-100uA
VPENLK VPEN Lockout during Program, 3,5,6 Erase Lock-Bit Operations VPENH VPEN during Block Erase, Program, Lock-Bit Operations VLKO Lockout Voltage
NOTES: Includes STS. CMOS inputs either inputs either Sampled, 100% tested. ICCWS ICCES specified with device de-selected. Block erases, programming, lock-bit configurations inhibited when PENLK guaranteed range between VPENLK (max) VPENH (min), above VPENH (max). Typically, VPEN connected (3.0 Block erases, programming, lock-bit configurations inhibited when VLKO guaranteed range between VLKO (min) (min), above (max).
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Figure Transient Input/Output Reference Waveform VCCQ=3.0V-3.6V
VCCQ Input VCCQ/2
Note:AC test inputs driven VCCQ Logic 0.0V Logic "0". Input timing being, output timing ends, VCCQ/2V (50% VCCQ). Input rise fall times (10% 90%)<5ns.
TEST POINTS
VCCQ/2 Output
Figure Transient Equivalent Testing Load Circuit
1.3V 1N914
RL=3.3K
Device Under Test
NOTE: Includes Capacitance
Test Configuration VCCQ V-3.6
(pF)
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Characteristics -Read-Only Operations (1,2)
Versions (All units unless otherwise noted) tAVAV tAVQV tELQV tGLQV tPHQV tELQX tGLQX tEHQZ tGHQZ tELFL/tELFH tFLQZ tEHEL tAPA tGLQV Parameter Read/Write Cycle Time Address Output Delay Output Delay Non-Array Output Delay RESET High Output Delay Output Output High Output High High Output High Output Hold from Address, CEX, Change, Whichever Occurs First BYTE High BYTE Output High High Page Address Access Time Array Output Delay 1000 1000 tFLQV/tFHQV BYTE Output Delay VCCQ Notes 3.0V-3.6V(3) 3.0V-3.6V(3)
NOTES:CEX defined first edge that enables device. high defined first edge CE0, CE1, that disables device (see Table Input/Output Reference Waveforms maximum allowable input slew rate. delayed ELQV GLQV after first edge CE0, CE1, that enables device (see Table without impact ELQV Figures 14-16, Transient Input/Output Reference Waveform VCCQ 3.0V 3.6V, Transient Equivalent Testing Load Circuit testing characteristics. 3.0V 3.6V. When reading eLiteFlashmemory array faster tGLQV (R16) applies. Non-array reads refer status register reads, query reads, device identifier reads. Sampled, 100% tested. devices configured standard word/byte read mode, (tAPA) will equal (tAVQV).
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Figure Waveform Both Page-Mode Standard Word/Byte Read Operations
Address (A22-A3)
tAVAV
Address (A2-A0)
Valid Address
Valid Address Valid Address
Valid Address
tEHEL
Disable
CEx[E]
Enable tAVQV tEHQZ
tELQV tGHQZ
tPHQV
tGLQV tAPA tELQX
DATA[D/Q]
High
Valid Output
tGLQX
Valid Valid Output Output
Valid Output
High
RESET[P]
tELFL/tELFH
tFLQV/tFHQV tFLQZ
BYTE
NOTE: defined first edge that enables device. high defined first edge CE0, CE1, that disables device (see Table standard word/byte read operations, tAPA will equal tAVQV. When reading eLiteFlashmemory array faster tGLQV applies. Non-array reads refer status register reads, query reads, device identifier reads.
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Characteristics-Write Operations (1,2)
Versions Symbol tPHWL (tPHEL tELWL (tWLEL tDVWH (tDVEH tAVWH (tAVEH tWHEH (tEHWH) tWHDX (tEHDX) tWHAX (tEHAX) tWPH tVPWH (tVPEH) tWHGL (tEHGL) tWHRL (tEHRL) tQVVL Parameter RESET High Recovery WE(CEX) Going (WE) WE(CEX) Going Write Pulse Width Data Setup WE(CEX) Going High Address Setup WE(CEX) Going High (WE) Hold from WE(CEX) High Data Hold from WE(CEX) High Address Hold from WE(CEX) High Write Pulse Width High VPEN Setup WE(CEX) Going High Write Recovery before Read WE(CEX) High Going VPEN Hold from Valid SRD, Going High 3,8,9 75/85 Notes Valid Speeds Unit
tWHQV5 (tEHQV5) Lock-Bit Time tWHQV6 (tEHQV6) Clear Block Lock-Bits Time
NOTES: defined first edge CE0, CE1, that enables device. high defined first edge CE0, CE1, that disables device (see Table Read timing characteristics during block erase, program, lock-bit configuration operations same during read-only operations. Refer Characteristics-Read-Only Operations. write operation initiated terminated with either Sampled, 100% tested. Write pulse width (tWP) defined from going (whichever goes last) going high (whichever goes high first). Hence, tWLWH tELEH tWLEH tELWH. Refer Table valid block erase, program, lock-bit configuration. Write pulse width high WPH) defined from going high (whichever goes high first) going (whichever goes first). Hence, tWPH tWHWL tEHEL tWHEL tEHWL array access, tAVQV required addition tWHGL accesses after write. timings based configured RY/BY default mode. VPEN should held VPENH until determination block erase, program, lock-bit configuration success (SR.1/3/4/5=0).
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Figure Waveform Write Operations
Address
tAVWH (tAVEH)
Disable
tWHAX (tEHAX)
CEx,(WE)[E(W)]
Enable tPHWL (tPHEL) tWHEH (tEHWH) tWHGL (tEHGL)
Disable
tELWL (tWLEL)
tWPH
tWHQZ/tWHRH
WE,(CEx)[W(E)]
Enable tOVWH (tDVEH)
tWHDX (tEHDX)
DATA[D/Q]
tWHRL (tEHRL)
Valid
STS[R]
RESET
tVPWH (tVPEH) tQVVL
VPENH
VPEN[V] VPENLK
NOTES: defined first edge that enables device. high defined first edge CE0, CE1, that disables device (see Table shown default mode (RY/BY). power-up standby. Write block erase, write buffer, program setup. Write block erase write buffer confirm, valid address data. Automated erase delay. Read status register query data. Write Read Array command.
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Figure Waveform Reset Operation
tPHRH
RESET
tPLPH
NOTE: shown default mode (RY/BY).
Reset Specifications
tPLPH tPHRH Parameter Notes RESET Pulse Time RESET tied this specification applicable) RESET High Reset during Block Erase, Program, Lock-Bit Configuration Unit
NOTES: These specifications valid product versions (packages speeds). RESET asserted while block erase, program, lock-bit configuration operation executing then minimum required RESET Pulse Time 100ns. reset time, tPHQV, required from latter RY/BY mode) RESET going high until outputs valid.
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ERASE PROGRAMMING PERFORMANCE(1)
LIMITS PARAMETER Block Erase Time Write Buffer Byte Program Time (Time Program bytes/16 words) Byte Program Time (Using Word/Byte Program Command) Block Program Time (Using Write Buffer Command) Block Erase/Program Cycles Note: Cycles MIN. TYP.(2) MAX. 15.0 UNITS
1.Not 100% Tested, Excludes external system level over head. 2.Typical values measured C,3.3V. Additionally programming typically assume checkerboard pattern.
LATCH-UP CHARACTERISTICS
MIN. Input Voltage with respect Input Voltage with respect power pins, Address pins, Input Voltage with respect pins Current Includes pins except VCC. Test conditions: 3.0V, time. -1.0V -1.0V -1.0V -100mA MAX. 12.5V VCCmax 1.0V +100mA
CAPACITANCE TA=0° VCC=3.0V~3.6V
Parameter Symbol COUT CIN2 Parameter Description Input Capacitance Output Capacitance Control Capacitance Test VIN=0 VOUT=0 VIN=0 UNIT
Notes: Sampled, 100% tested. Test conditions TA=25° f=1.0MHz
DATA RETENTION
Parameter Minimum Pattern Data Retention Time Test Conditions Unit Years Years
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ORDERING INFORMATION PLASTIC PACKAGE
Part MX26F640J3TC-10 MX26F640J3XCC-10 Access Time (ns) 100/25 100/25 56-TSOP 64-CSP Package type
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PACKAGE INFORMATION
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REVISION HISTORY
Revision Description 0.00 separated from 26F128J3 datasheet Page Date JUN/30/2004
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Macronix NBit Memory Family [x8/x16] SINGLE PAGE MODE eLiteFlashM

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