MICROWAVE TRANSISTORS APPLICATIONS Features DESIGNED HIGH POWER P
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MSC1075MP
MICROWAVE TRANSISTORS APPLICATIONS Features
DESIGNED HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS (typ.) 1030 1090 (min.) 1025 1150 (typ.) TACAN -1215 MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING THERMAL RESISTANCE RELIABILITY RUGGEDNESS INFINITE LOAD VSWR CAPABILITY SPECIFIED OPERATING CONDITIONS INPUT MATCHED COMMON BASE CONFIGURATION
DESCRIPTION:
MSC1075MP gold-metallized silicon, power transistor designed applications requiring high peak power duty cycles, such IFF, DME, TACAN. packaged .280" input-matched stripline flange package, resulting improved broadband performance thermal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C)
Symbol Parameter Value Unit
VCBO VCES VEBO PDISS
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
218.7 +150
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
MSC1075MP
ELECTRICAL SPECIFICATIONS (Tcase STATIC
Symbol Test Conditions Min. Value Typ. Max. Units
BVCBO BVCES BVEBO ICES
DYNAMIC
Symbol Test Conditions Min. Value Typ. Max. Units
POUT
Note:
1025 1150 1025 1150
13.0 13.0
Pulse width 10µSec. Duty Cycle This device suitable under other pulse width/duty cycle conditions. Please contact factory specific applications assistance.
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
MSC1075MP
PACKAGE MECHANICAL DATA
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
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