MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features DESIGNED HIG
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MSC1015MP
MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features
DESIGNED HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS (typ.) 1030 1090 (min.) 1025 1150 (typ.) TACAN -1215 REFRACTORY GOLD METALLIZATION EMITTER BALLASTING THERMAL RESISTANCE RELIABILITY RUGGEDNESS 20:1 LOAD VSWR CAPABILITY SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION
DESCRIPTION:
MSC1015MP gold-metallized, epitaxial, silicon power transistor designed applications requiring high peak power duty cycles, such IFF, DME, TACAN. packaged .280" input-matched stripline package, resulting improved broadband performance thermal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C)
Symbol Parameter Value Unit
VCBO VCES VEBO PDISS
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
87.5 +150
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
MSC1015MP
ELECTRICAL SPECIFICATIONS (Tcase
STATIC
Symbol Test Conditions Min. Value Typ. Max. Units
BVCBO BVCES BVEBO ICES
DYNAMIC
Symbol Test Conditions Min. Value Typ. Max. Units
POUT
Note:
1025 1150 1025 1150 1025 1150
Pulse width 10µSec Duty Cycle
IMPEDANCE DATA
Freq. (MHz)
1030 1090 1150 1215
12.5 12.5 13.5 14.0 17.0
17.0 15.5 17.0 14.5 19.5 12.5 18.0 12.0 16.0 12.0
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
MSC1015MP
PACKAGE MECHANICAL DATA
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
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