MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS Features
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MS3023
MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS Features
GOLD METALIZATION Pout MINIMUM INFINITE VSWR CAPABLE RATED CONDITIONS HERMETIC PACKAGE COMMON BASE CONFIGURATION
DESCRIPTION:
MS3023 common base, hermetically sealed silicon microwave power transistor. This device designed Class applications frequency range. Gold metalization emitter ballasting provide long-term reliability superior ruggedness.
ABSOLUTE MAXIMUM RATINGS (Tcase
Symbol
PDISS
Parameter
Power Dissipation* Collector-Supply Voltage* Device Current* Junction Temperature Storage Temperature
Value
21.8 +200
Unit
THERMAL DATA
RTH(J-C) Thermal Resistance Junction-case Applies only rated amplifier operation
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
MS3023
ELECTRICAL SPECIFICATIONS (Tcase
STATIC
Symbol
BVCBO BVCER BVEBO ICBO
Test Conditions
Value Min.
Typ.
Max.
-1.0
Unit
DYNAMIC
Symbol POUT
Test Conditions
=28V
Value Min.
Typ.
Max.
-6.5
Unit
IMPEDANCE DATA
FREQ ZIN() j5.5 j9.0 j12.5 PIN= 0.5=W VCC=28V ZCL() j16.0 j7.0 j1.0
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
MS3023 TEST CIRCUIT
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
MS3023
PACKAGE MECHANICAL DATA
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
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