MICROWAVE TRANSISTORS APPLICATIONS Features VOLTS POUT WATTS
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MS1536
MICROWAVE TRANSISTORS APPLICATIONS
Features
VOLTS POUT WATTS MINIMUM INPUT OUTPUT MATCHED COMMON BASE CONFIGURATION
DESCRIPTION:
MS1536 Class epitaxial silicon planar transistor designed primarily communications. This device utilizes diffused emitter resistors achieve 10:1 VSWR capability under specified operating conditions. Internal input matching provides optimum power gain efficiency over band.
ABSOLUTE MAXIMUM RATINGS (Tcase
Symbol
VCBO VCES VEBO PDISS
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Storage Temperature Junction Temperature
Value
+150 +200
Unit
Thermal Data
RTH(J-C) Thermal Resistance Junction-case
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
MS1536
ELECTRICAL SPECIFICATIONS (Tcase
Symbol
BVCBO BVCES BVCEO BVEBO ICES 50mA 50mA 50mA 10mA
STATIC
Test Conditions
Min.
Value Typ.
Max.
Unit
DYNAMIC
Symbol
POUT
Test Conditions
Min.
Value Typ.
Max.
Unit
IMPEDANCE DATA
FREQ POUT ZIN() j3.8 j3.4 j2.6 10.8 j1.0 ZCL() j2.0 j0.4 j.06 j0.5
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
MS1536
TYPICAL PERFORMANCE
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
MS1536
PACKAGE MECHANICAL DATA
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
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