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MS1536

RF & MICROWAVE TRANSISTORS 800 / 900 MHz APPLICATIONS

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MS1536
RF & MICROWAVE TRANSISTORS 800 / 900 MHz APPLICATIONS
Features
DESCRIPTION:
The MS1536 is a 28V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes diffused emitter resistors to achieve 10:1 VSWR capability under specified operating conditions. Internal input matching provides optimum power gain and efficiency over the 225 - 400 MHz band.
Symbol
VCBO VCES VEBO IC PDISS T STG TJ
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Storage Temperature Junction Temperature
Value
55 55 4.0 10 175 -65 to +150 +200
Thermal Data
RTH(J-C) Thermal Resistance Junction-case 1.0 ° C / W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS1536
Symbol
STATIC
Test Conditions
Value Typ.
DYNAMIC
Symbol
Test Conditions
Value Typ.
IMPEDANCE DATA
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS1536
TYPICAL PERFORMANCE
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS1536
PACKAGE MECHANICAL DATA
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.