Preliminary CMOS SRAM 2Mb(128K bit) Power SRAM INFORMATION T

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Preliminary CMOS SRAM 2Mb(128K bit) Power SRAM INFORMATION T

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K6F2016U4G Family
Preliminary CMOS SRAM
2Mb(128K bit) Power SRAM
INFORMATION THIS DOCUMENT PROVIDED RELATION SAMSUNG PRODUCTS, SUBJECT CHANGE WITHOUT NOTICE. NOTHING THIS DOCUMENT SHALL CONSTRUED GRANTING LICENSE, EXPRESS IMPLIED, ESTOPPEL OTHERWISE, INTELLECTUAL PROPERTY RIGHTS SAMSUNG PRODUCTS TECHNOLOGY. INFORMATION THIS DOCUMENT PROVIDED BASIS WITHOUT GUARANTEE WARRANTY KIND.
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Samsung Electronics reserves right change products specification without notice.
-1Revision April 2005
K6F2016U4G Family
Document Title
Preliminary CMOS SRAM
128Kx16 Super Power Voltage Full CMOS Static
Revision History
Revision History
Initial Draft
Draft Date
April 2005
Remark
Preliminary
attached datasheets provided SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve right change specifications products. SAMSUNG Electronics will answer your questions about device. have questions, please contact SAMSUNG branch offices.
Revision April 2005
K6F2016U4G Family
FEATURES
Preliminary CMOS SRAM
GENERAL DESCRIPTION
K6F2016U4G families fabricated SAMSUNGs advanced full CMOS process technology. families support industrial temperature range ball Chip Scale Package user flexibility system design. family also supports data retention voltage battery back-up operation with data retention current.
128K Super Power Voltage Full CMOS Static
Process Technology: Full CMOS Organization: 128K Power Supply Voltage: 2.7~3.3V Data Retention Voltage: 1.5V(Min) Three State Outputs Package Type: 48-FBGA-6.00x7.00
PRODUCT FAMILY
Power Dissipation Product Family Operating Temperature Range Speed Standby (ISB1, Typ.) 3µA2) Operating (ICC1, Max) Type
K6F2016U4G-F
Industrial(-40~85°C)
2.7~3.3V
551)/70ns
48-FBGA-6.00x7.00
parameter measured with 30pF test load. Typical value measured VCC=3.0V, TA=25°C 100% tested.
DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
gen. Precharge circuit.
I/O9
I/O1
Addresses
I/O10
I/O11
I/O2
I/O3
select
Memory Cell Array
I/O12
I/O4
I/O13
I/O5
I/O1~I/O8
Data cont Data cont Data cont
Circuit Column select
I/O15
I/O14
I/O6
I/O7
I/O9~I/O16
I/O16
I/O8 Column Addresses
48-FBGA: View (Ball Down) Name A0~A16 Function Chip Select Inputs Output Enable Input Write Enable Input Address Inputs Name Function Power Ground Upper Byte(I/O9~16) Lower Byte(I/O1~8)
Control Logic
I/O1~I/O16 Data Inputs/Outputs
Revision April 2005
K6F2016U4G Family
PRODUCT LIST
Industrial Temperature Products(-40~85°C) Part Name K6F2016U4G-FF55 K6F2016U4G-XF55 K6F2016U4G-FF70 K6F2016U4G-XF70
Lead Free Product
Preliminary CMOS SRAM
Function 48-FBGA, 55ns, 3.0V 48-FBGA, 55ns, 3.0V, LF1) 48-FBGA, 70ns, 3.0V 48-FBGA, 70ns, 3.0V, LF1)
FUNCTIONAL DESCRIPTION
I/O1~8 High-Z High-Z High-Z High-Z Dout High-Z Dout High-Z
I/O9~16 High-Z High-Z High-Z High-Z High-Z Dout Dout High-Z
Mode Deselected Deselected Output Disabled Output Disabled Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write
Power Standby Standby Active Active Active Active Active Active Active Active
means dont care. (Must high state)
ABSOLUTE MAXIMUM RATINGS1)
Item Voltage relative Voltage supply relative Power Dissipation Storage temperature Operating Temperature Symbol VIN, VOUT TSTG Ratings -0.3 VCC+0.3V(Max. 3.6V) -0.3 Unit
Stresses greater than those listed under "Absolute Maximum Ratings" cause permanent damage device. Functional operation should restricted within recommended operating condition. Exposure absolute maximum rating conditions extended period affect reliability.
Revision April 2005
K6F2016U4G Family
RECOMMENDED OPERATING CONDITIONS1)
Item Supply voltage Ground Input high voltage Input voltage
Note: Industrial Product: TA=-40 85°C, otherwise specified. Overshoot: Vcc+2.0V case pulse width 20ns. Undershoot: -2.0V case pulse width 20ns. Overshoot undershoot sampled, 100% tested.
Preliminary CMOS SRAM
Symbol
-0.3
Vcc+0.32)
Unit
CAPACITANCE1) (f=1MHz, TA=25°C)
Item Input capacitance Input/Output capacitance
Capacitance sampled, 100% tested
Symbol
Test Condition VIN=0V VIO=0V
Unit
OPERATING CHARACTERISTICS
Item Input leakage current Output leakage current
Symbol
Test Conditions VIN=Vss CS=VIH OE=VIH WE=VIL LB=UB=VIH, VIO=Vss Cycle time=1µs, 100%duty, IIO=0mA, CS0.2V, LB0.2V or/and UB0.2V, VIN0.2V VINVCC-0.2V Cycle time=Min, IIO=0mA, 100% duty, CS=VIL, LB=VIL or/and UB=VIL, VIN=VIL 2.1mA -1.0mA Other input =0~Vcc CSVcc-0.2V(CS controlled) LB=UBVcc-0.2V, CS0.2V(LB/UB controlled) 70ns 55ns
Typ1)
Unit
ICC1
Average operating current ICC2 Output voltage Output high voltage Standby Current (CMOS) ISB1
Typical values measured VCC=3.0V, TA=25°C 100% tested.
Revision April 2005
K6F2016U4G Family
OPERATING CONDITIONS
TEST CONDITIONS(Test Load Test Input/Output Reference)
Input pulse level: 2.2V Input rising falling time: Input output reference voltage: 1.5V Output load (See right): 100pF+1TTL 30pF+1TTL
Preliminary CMOS SRAM
VTM3) R12)
CL1)
R22)
Including scope capacitance R1=3070, R2=3150 V=2.8V
CHARACTERISTICS Vcc=2.7~3.3V, Industrial product:TA=-40 85°C
Speed Parameter List Symbol Read cycle time Address access time Chip select output Output enable valid output Access Time Read Chip select low-Z output enable low-Z output Output enable low-Z output Chip disable high-Z output disable high-Z output Output disable high-Z output Output hold from address change Write cycle time Chip select write Address set-up time Address valid write Valid Write Write Write pulse width Write recovery time Write output high-Z Data write time overlap Data hold from write time write output low-Z tBLZ tOLZ tBHZ tOHZ tWHZ 55ns 70ns Units
DATA RETENTION CHARACTERISTICS
Item data retention Data retention current Data retention set-up time Recovery time Symbol tSDR tRDR Test Condition CSVcc-0.2V VIN0V
Unit
Vcc=1.5V, CSVcc-0.2V VIN0V
data retention waveform
CSVcc-0.2V(CS controlled) LB=UBVcc-0.2V, CS0.2V(LB/UB controlled)
Revision April 2005
K6F2016U4G Family
TIMING DIAGRAMS
Preliminary CMOS SRAM
TIMING WAVEFORM READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH, or/and LB=VIL)
Address Data Previous Data Valid Data Valid
TIMING WAVEFORM READ CYCLE(2) (WE=VIH)
Address
tBHZ tOLZ tBLZ Data Valid tOHZ
Data
High-Z
NOTES (READ CYCLE) tOHZ defined time which outputs achieve open circuit conditions referenced output voltage levels. given temperature voltage condition, tHZ(Max.) less than tLZ(Min.) both given device from device device interconnection.
Revision April 2005
K6F2016U4G Family
TIMING WAVEFORM WRITE CYCLE(1) Controlled)
Address tCW(2) tWP(1) tAS(3) Data High-Z tWHZ Data Data Undefined Data Valid tWR(4)
Preliminary CMOS SRAM
High-Z
TIMING WAVEFORM WRITE CYCLE(2) Controlled)
Address tAS(3) tWP(1) Data Data Valid tCW(2) tWR(4)
Data
High-Z
High-Z
Revision April 2005
K6F2016U4G Family
TIMING WAVEFORM WRITE CYCLE(3) (UB, Controlled)
Address tCW(2) tAS(3) tWP(1) Data Data Valid tWR(4)
Preliminary CMOS SRAM
Data
NOTES (WRITE CYCLE)
High-Z
High-Z
write occurs during overlap(tWP) write begins when goes goes with asserting single byte operation simultaneously asserting double byte operation. write ends earliest transition when goes high goes high. measured from beginning write write. measured from going write. measured from address valid beginning write. measured from write address change. applied case write ends going high.
DATA RETENTION WAVE FORM
LB/UB controlled
2.7V tSDR Data Retention Mode tRDR
2.2V CSVCC-0.2V LB=UBVCC-0.2V LB/UB
Revision April 2005
K6F2016U4G Family
PACKAGE DIMENSION
TAPE BALL GRID ARRAY(0.75mm ball pitch)
View Bottom View
Preliminary CMOS SRAM
Unit: millimeters
C1/2 Detail 0.35/Typ. 0.55/Typ. Notes. Bump counts: 48(8 column) Bump pitch: (x,y)=(0.75 0.75)(typ.) tolerence +/-0.050 unless otherwise specified. Typ: Typical coplanarity: 0.10(Max)
Side View
5.90 6.90 0.40 0.25
0.75 6.00 3.75 7.00 5.25 0.45
6.10 7.10 0.50 1.00
0.10
Revision April 2005

Preliminary CMOS SRAM 2Mb(128K bit) Power SRAM INFORMATION T

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