Z-MOS Power MOSFET N-Channel Enhancement Mode Linear 175MHz MOSFE

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Z-MOS Power MOSFET N-Channel Enhancement Mode Linear 175MHz MOSFE

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IXZ308N120
Z-MOS Power MOSFET
N-Channel Enhancement Mode Linear 175MHz MOSFET Switch Mode MOSFET Capacitance Z-MOS MOSFET Process Capacitance Z-MOSTMMOSFET Process Optimized Operation Linear Operation Ideal Class ABD, Applications Broadcast Communications Applications
Symbol VDSS VDGR VGSM ID25 dv/dt Test Conditions
25°C 150°C 25°C 150°C; Continuous Transient 25°C 25°C, pulse width limited 25°C 25°C IDM, di/dt 100A/µs, VDSS, 150°C,
VDSS ID25 RDS(on)
1200
Maximum Ratings 1200 1200
V/ns >200 V/ns
DRAIN
PDHS PDAMB RthJC RthJHS
25°C, Derate 4.4W/°C above 25°C 25°C
GATE
0.17 0.34
Features
min. VDSS VGS(th) IGSS IDSS RDS(on) Tstg Weight
1.6mm(0.063 from case VGS, 250µ VDC, 0.8VDSS VGS=0 =125C
typ.
max. ±100 +175
1200
Isolated Substrate high isolation voltage (>2500V) excellent thermal transfer Increased temperature power
cycling capability IXYS advanced Z-MOS process gate charge capacitances easier drive faster switching RDS(on) Very insertion inductance (<2nH) beryllium oxide (BeO) other hazardous materials
0.5ID25 Pulse test, 300µS, duty cycle 0.5ID25, pulse test
10.1
Advantages
Optimized high speed Easy mount-no insulators needed High power density
IXZ308N120
Z-MOS Power MOSFET
Symbol Test Conditions Characteristic Values 25°C unless otherwise specified) min. Ciss Coss Crss Cstray Td(on) Td(off) Toff Source-Drain Diode Symbol Test Conditions
Repetitive; pulse width limited IF=Is, VGS=0 Pulse test, 300µs, duty cycle VDSS (External) Back Metal VDSS(max),
typ.
max.
1960 Characteristic Values 25°C unless otherwise specified) min. typ. max.
IXYS reserves right change limits, test conditions dimensions. IXYS MOSFETS covered more following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585 6,731,002
IXZ308N120
Z-MOS Power MOSFET
10000
1000
Ciss
Capacitance
Coss
Crss
1000 1200
Volts
IXZ308N120 Capacitances verses
#dsIXZ308N12 06/04 2004 IXYS
IXYS Company
2401 Research Blvd., Suite Fort Collins, 80526 970-493-1901 Fax: 970-493-1903 Email: info@ixysrf.com Web: http://www.ixysrf.com

Z-MOS Power MOSFET N-Channel Enhancement Mode Linear 175MHz MOSFE

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