3DD13005 TRANSISTOR TO-220 FEATURES Power dissipation WTamb=
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TO-220 Plastic-Encapsulate Transistors
3DD13005
TRANSISTOR TO-220
FEATURES Power dissipation WTamb=25 Collector current ICM: Collector-base voltage V(BR)CBO Operating storage junction temperature range stg: +150 ELECTRICAL CHARACTERISTICSTamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition Frequency Fall time Storage time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO (sat) (sat)
1.BASE 2.COLLECTOR 3.EMITTER
unless
Test
otherwise
specified
UNIT 1000 1000
conditions
1000 µAIE=0 mAIB=0
1000 µAIC=0 VCB= IE=0 VCE= IB=0 VEB= IC=0
VCE= 1000mA IC=2000m A,IB=500 IC=2000m 500mA VCE=10 IC=500mA
1MHz IB1=-IB2=0.4A, IC=2A
VCC=120V
CLASSIFICATION
Rank Range 10-15 15-20 20-25 25-30 30-35 35-40
TO-220-3L PACKAGE OUTLINE DIMENSIONS
Symbol
Dimensions Millimeters 4.470 2.520 0.710 1.170 0.310 1.710 10.010 8.500 12.060 2.540TYP 4.980 2.590 13.400 3.560 3.790 5.180 2.890 13.800 3.960 3.890 4.670 2.820 0.910 1.370 0.530 1.370 10.310 8.900 12.460
Dimensions Inches 0.184 0.111 0.036 0.054 0.021 0.054 0.406 0.350 0.491 0.100TYP 0.196 0.102 0.528 0.140 0.149 0.204 0.114 0.543 0.156 0.153 1.176 0.099 0.028 0.046 0.012 0.046 0.394 0.335 0.475
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