3DD13003 TRANSISTOR TO-220 BASE COLLECTOR EMITTER
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TO-220 Plastic-Encapsulate Transistors
3DD13003
TRANSISTOR
TO-220
BASE COLLECTOR EMITTER
power switching applications
MAXIMUM RATINGS* TA=25 unless otherwise noted
Symbol VCBO VCEO VEBO Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Storage Temperature Value -55-150 Units
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current current gain hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Fall time Storage time VCE(sat) VBE(sat) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE1
unless
Test
otherwise
specified)
1000 1000 UNIT
conditions
1000uA, IE=0 1mA, IB=0 IC=0
VCB= 700V IE=0 VCE= 400V, VEB=
IC=0
VCE= VCE= 1.5A IC=1000mA,IB= IC=1000mA, 250mA 2000 VCE=10V,Ic=100mA =1MHz IC=1A, IB1=-IB2=0.2A
VCC=100V
CLASSIFICATION
Rank Range 8-10
10-15
15-20
20-25
25-30
30-35
35-40
Typical Characteristics
3DD13003
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