OptiMOS®2 Power-Transistor Features N-channel, normal level Excel

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OptiMOS®2 Power-Transistor Features N-channel, normal level Excel

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IPB08CNE8N IPI08CNE8N IPP08CNE8N
OptiMOS®2 Power-Transistor
Features N-channel, normal level Excellent gate charge DS(on) product (FOM) Very on-resistance DS(on) operating temperature Pb-free lead plating; RoHS compliant Qualified according JEDEC1) target application
Product Summary DS(on),max (TO263)
Ideal high-frequency switching synchronous rectification Type IPB08CNE8N IPI08CNE8N IPP08CNE8N
Package Marking
PG-TO263-3 08CNE8N
PG-TO262-3 08CNE8N
PG-TO220-3 08CNE8N
Maximum ratings, j=25 unless otherwise specified Parameter Continuous drain current Symbol Conditions C=25 C=100 Pulsed drain current2) Avalanche energy, single pulse Reverse diode Gate source voltage3) Power dissipation Operating storage temperature climatic category; 68-1 D,pulse C=25 C=25 D=95 GS=25 D=95 DS=68 =100 A/µs, j,max=175 Value 55/175/56 kV/µs Unit
Rev. 1.01
page
2006-02-17
IPB08CNE8N IPI08CNE8N
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction case Thermal resistance, junction ambient (TO220, TO262, TO263) thJC thJA minimal footprint cooling area4)
IPP08CNE8N
Unit max.
Values typ.
Electrical characteristics, j=25 unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current (BR)DSS GS=0 GS(th) DS=V D=130 DS=68 GS=0 j=25 DS=68 GS=0 j=125 Gate-source leakage current Drain-source on-state resistance DS(on) GS=20 DS=0 GS=10 D=95 (TO263) GS=10 D=95 (TO220, TO262) Gate resistance Transconductance DS|>2|I DS(on)max, D=95
J-STD20 JESD22 figure Tjmax=150 duty cycle D=0.01 gs<-5V
Device epoxy with (one layer, thick) copper area drain connection. vertical still air.
Rev. 1.01
page
2006-02-17
IPB08CNE8N IPI08CNE8N
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics5) Gate source charge Gate drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge
IPP08CNE8N
Unit max.
Values typ.
d(on) d(off) DD=40 GS=10 D=47.5 G=1.6 GS=0 DS=40
5030
6690 1250
plateau DD=40 GS=0 DD=40 D=95 GS=0
S,pulse
C=25 GS=0 F=95 j=25 R=40 F/dt =100 A/µs
figure gate charge parameter definition
Rev. 1.01
page
2006-02-17
IPB08CNE8N IPI08CNE8N
Power dissipation tot=f(T Drain current D=f(T GS10
IPP08CNE8N
[°C]
[°C]
Safe operating area D=f(V DS); C=25 parameter:
Max. transient thermal impedance thJC=f(t parameter:
thJC [K/W]
10-1
0.05 0.02
0.01 single pulse
10-1
10-2
10-5
10-4
10-3
10-2
10-1
Rev. 1.01
page
2006-02-17
IPB08CNE8N IPI08CNE8N
Typ. output characteristics D=f(V DS); j=25 parameter:
IPP08CNE8N
Typ. drain-source resistance DS(on)=f(I j=25 parameter:
DS(on)
Typ. transfer characteristics D=f(V GS); DS|>2|I DS(on)max parameter:
Typ. forward transconductance fs=f(I j=25
Rev. 1.01
page
2006-02-17
IPB08CNE8N IPI08CNE8N
Drain-source on-state resistance DS(on)=f(T D=95 GS=10 Typ. gate threshold voltage GS(th)=f(T GS=V parameter:
1300
IPP08CNE8N
DS(on)
GS(th)
[°C]
[°C]
Typ. capacitances =f(V DS); GS=0
Forward characteristics reverse diode F=f(V parameter:
Ciss
Coss
[pF]
Crss
Rev. 1.01
page
2006-02-17
IPB08CNE8N IPI08CNE8N
Avalanche characteristics AS=f(t AV); GS=25 parameter: j(start)
IPP08CNE8N
Typ. gate charge GS=f(Q gate); D=95 pulsed parameter:
1000
[µs]
gate [nC]
Drain-source breakdown voltage BR(DSS)=f(T
Gate charge waveforms
BR(DSS)
s(th)
(th)
gate
[°C]
Rev. 1.01
page
2006-02-17
IPB08CNE8N IPI08CNE8N
PG-TO220-3: Outline
IPP08CNE8N
Rev. 1.01
page
2006-02-17
IPB08CNE8N IPI08CNE8N IPP08CNE8N
Rev. 1.01
page
2006-02-17
IPB08CNE8N IPI08CNE8N IPP08CNE8N
Rev. 1.01
page
2006-02-17
IPB08CNE8N IPI08CNE8N IPP08CNE8N
Published Infineon Technologies 81726 Germany Infineon Technologies 2006. Rights Reserved. Attention please! information given this data sheet shall event regarded guarantee conditions characteristics ("Beschaffenheitsgarantie"). With respect examples hints given herein, typical values stated herein and/or information regarding application device, Infineon Technologies hereby disclaims warranties liabilities kind, including without limitation warranties non-infringement intellectual property rights third party. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office www.infineon.com Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system. Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
Rev. 1.01
page
2006-02-17

OptiMOS®2 Power-Transistor Features N-channel, normal level Excel

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