IPP070N06N OptiMOS® Power-Transistor Features gate charge fa

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IPP070N06N OptiMOS® Power-Transistor Features gate charge fa

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IPB070N06N
IPP070N06N
OptiMOS® Power-Transistor
Features gate charge fast switching applications N-channel enhancement normal level operating temperature Avalanche rated Pb-free lead plating, RoHS compliant
Product Summary DS(on),max
SMDversion
Type
IPB070N06N
IPP070N06N
Type IPB066N06N Package IPP066N06N Marking
Package P-TO263-3-2 P-TO263-3-2 070N06N P-TO220-3-1
Marking P-TO220-3-1 066N06N 070N06N 066N06N
Maximum ratings, j=25 unless otherwise specified Parameter Continuous drain current Symbol Conditions C=25 °C1) C=100 Pulsed drain current Avalanche energy, single pulse Reverse diode Gate source voltage Power dissipation Operating storage temperature climatic category; 68-1
Value
Unit
D,pulse
C=25 °C2) D=80 GS=25 D=80 DS=48 =200 A/µs, j,max=175
kV/µs
C=25
55/175/56
Current limited bondwire; with thJC=0.6 chip able carry figure
Rev. 1.01
page
2006-06-19
IPB070N06N
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction case version, device thJC thJA minimal footprint cooling area3) Electrical characteristics, j=25 unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current (BR)DSS GS=0 GS(th) DS=V D=180 DS=60 GS=0 j=25 DS=60 GS=0 j=125 Gate-source leakage current Drain-source on-state resistance DS(on) GS=20 DS=60 GS=10 D=80 GS=10 D=80 version Gate resistance Transconductance DS|>2|I DS(on)max, D=80 0.01
IPP070N06N
Unit max.
Values typ.
Device epoxy with (one layer, thick) copper area drain connection. vertical still air.
Rev. 1.01
page
2006-06-19
IPB070N06N
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics4) Gate source charge Gate charge threshold Gate drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge
IPP070N06N
Unit max.
Values typ.
d(on) d(off) DD=30 GS=10 D=80 G=3.3 GS=0 DS=30
3100
4100 1100
g(th) plateau DD=30 GS=0 DD=30 D=80 GS=0
S,pulse
C=25 GS=0 F=80 j=25 R=30 F/dt =100 A/µs
0.95
figure gate charge parameter definition
Rev. 1.01
page
2006-06-19
IPB070N06N
Power dissipation tot=f(T Drain current D=f(T GS10
IPP070N06N
[°C]
[°C]
Safe operating area D=f(V DS); C=25 parameter:
limited on-state resistance
Max. transient thermal impedance thJC=f(t parameter:
thJC [K/W]
0.05
0.02 0.01 single pulse
10-1
10-2
10-5
10-4
10-3
10-2
10-1
Rev. 1.01
page
2006-06-19
IPB070N06N
Typ. output characteristics D=f(V DS); j=25 parameter:
IPP070N06N
Typ. drain-source resistance DS(on)=f(I j=25 parameter:
DS(on)
Typ. transfer characteristics D=f(V GS); DS|>2|I DS(on)max parameter:
Typ. forward transconductance fs=f(I j=25
Rev. 1.01
page
2006-06-19
IPB070N06N
Drain-source on-state resistance DS(on)=f(T D=80 GS=10 Typ. gate threshold voltage GS(th)=f(T GS=V parameter:
IPP070N06N
1800
180µA
DS(on)
GS(th)
[°C]
[°C]
Typ. capacitances =f(V DS); GS=0
Forward characteristics reverse diode F=f(V parameter:
Ciss
175°C
[pF]
Coss
25°C
Crss
10-1
Rev. 1.01
page
2006-06-19
IPB070N06N
Avalanche characteristics AS=f(t AV); GS=25 parameter: j(start)
IPP070N06N
Typ. gate charge GS=f(Q gate); D=80 pulsed parameter:
[µs]
gate [nC]
Drain-source breakdown voltage BR(DSS)=f(T
Gate charge waveforms
BR(DSS)
s(th)
(th)
gate
[°C]
Rev. 1.01
page
2006-06-19
IPB070N06N
PG-TO-263
IPP070N06N
Rev. 1.01
page
2006-06-19
IPB070N06N
PG-TO220-3: Outline
IPP070N06N
Rev. 1.01
page
2006-06-19
IPB070N06N
IPP070N06N
Published Infineon Technologies 81726 Germany Infineon Technologies 2006. Rights Reserved. Attention please! information given this data sheet shall event regarded guarantee conditions characteristics ("Beschaffenheitsgarantie"). With respect examples hints given herein, typical values stated herein and/or information regarding application device, Infineon Technologies hereby disclaims warranties liabilities kind, including without limitation warranties Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office www.infineon.com Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system. Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
Rev. 1.01
page
2006-06-19

IPP070N06N OptiMOS® Power-Transistor Features gate charge fa

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