OptiMOS®2 Power-Transistor Features Ideal high-frequency dc/dc co

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OptiMOS®2 Power-Transistor Features Ideal high-frequency dc/dc co

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IPB03N03LB
OptiMOS®2 Power-Transistor
Features Ideal high-frequency dc/dc converters Qualified according JEDEC1) target application N-channel Logic level Excellent gate charge DS(on) product (FOM) Very on-resistance DS(on) Superior thermal resistance operating temperature rated Pb-free lead plating; RoHS compliant
Product Summary DS(on),max
PG-TO263-3 PG-TO220-3-1
Type IPB03N03LB
Package P-TO263-3
Marking 03N03LB
Maximum ratings, j=25 unless otherwise specified Parameter Continuous drain current Symbol Conditions C=25 °C2) C=100 Pulsed drain current Avalanche energy, single pulse Reverse diode Gate source voltage4) Power dissipation Operating storage temperature climatic category; 68-1
Value
Unit
D,pulse
C=25 °C3) D=80 GS=25 D=80 DS=20 =200 A/µs, j,max=175
kV/µs
C=25
55/175/56
J-STD20 JESD22
Rev. 0.94
page
2006-05-10
IPB03N03LB
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction case version, device thJC thJA minimal footprint cooling area5) Electrical characteristics, j=25 unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current (BR)DSS GS=0 GS(th) DS=V D=100 DS=30 GS=0 j=25 DS=30 GS=0 j=125 Gate-source leakage current Drain-source on-state resistance DS(on) GS=20 DS=0 GS=4.5 D=55 GS=10 D=55 Gate resistance Transconductance DS|>2|I DS(on)max, D=60 Values typ. max. Unit
Current limited bondwire; with thJC=1 chip able carry figure j,max=150 duty cycle <0.25 GS<-5
Device epoxy with (one layer, thick) copper area drain connection. vertical still air.
Diagrams related straight lead versions.
Rev. 0.94
page
2006-05-10
IPB03N03LB
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate source charge Gate charge threshold Gate drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total, sync. Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage S,pulse C=25 GS=0 F=80 j=25 R=15 F/dt =400 A/µs 0.89 g(th) plateau g(sync) DS=0.1 GS=0 DD=15 GS=0 DD=15 D=40 GS=0 16.9 11.2 12.2 16.9 Crss d(on) d(off) DD=15 GS=10 D=20 G=2.7 GS=0 DS=15 5732 2036 7624 2708 11.4 Values typ. max. Unit
Reverse recovery charge
figure gate charge parameter definition
Rev. 0.94
page
2006-05-10
IPB03N03LB
Power dissipation tot=f(T Drain current D=f(T GS10
[°C]
[°C]
Safe operating area D=f(V DS); C=25 parameter:
1000
Max. transient thermal impedance thJC=f(t parameter:
limited on-state resistance
thJC [K/W]
0.05 0.02 0.01 single pulse
0.01
0.001 10-6 10-5 10-4 10-3 10-20 10-1
Rev. 0.94
page
2006-05-10
IPB03N03LB
Typ. output characteristics D=f(V DS); j=25 parameter:
3.8V
Typ. drain-source resistance DS(on)=f(I j=25 parameter:
2.8V
DS(on)
Typ. transfer characteristics D=f(V GS); DS|>2|I DS(on)max parameter:
Typ. forward transconductance fs=f(I j=25
Rev. 0.94
page
2006-05-10
IPB03N03LB
Drain-source on-state resistance DS(on)=f(T D=55 GS=10 Typ. gate threshold voltage GS(th)=f(T GS=V parameter:
1000
DS(on)
GS(th)
[°C]
[°C]
Typ. Capacitances =f(V DS); GS=0
Forward characteristics reverse diode F=f(V parameter:
10000
Ciss
1000
Coss
1000
175°C
[pF]
Crss
25°C
Rev. 0.94
page
2006-05-10
IPB03N03LB
Avalanche characteristics AS=f(t AV); GS=25 parameter: Tj(start)
Typ. gate charge GS=f(Q gate); D=40 pulsed parameter:
1000
[µs]
gate [nC]
Drain-source breakdown voltage BR(DSS)=f(T
Gate charge waveforms
BR(DSS)
s(th)
g(th)
[°C]
Rev. 0.94
page
2006-05-10
IPB03N03LB
PG-TO263-3: Outline
Packaging
Rev. 0.94
page
2006-05-10
IPB03N03LB
Published Published Infineon Technologies 81726 Germany Infineon Technologies 2006. Rights Reserved. Attention please! information given this data sheet shall event regarded guarantee conditions characteristics ("Beschaffenheitsgarantie"). With respect examples hints given herein, typical values stated herein and/or information regarding application device, Infineon Technologies non-infringement intellectual property rights third party. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office (www.infineon.com Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system. Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
Rev. 0.94
page
2006-05-10

OptiMOS®2 Power-Transistor Features Ideal high-frequency dc/dc co

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