HTIP117D EPITAXIAL PLANAR TRANSISTOR Description HTIP11

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HTIP117D EPITAXIAL PLANAR TRANSISTOR Description HTIP11

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Spec. HD200204 Issued Date 2002.04.01 Revised Date 2005.08.18 Page
HTIP117D
EPITAXIAL PLANAR TRANSISTOR
Description
HTIP117D designed general purpose amplifier low-speed switching applications.
TO-126ML
Darlington Schematic
Absolute Maximum Ratings (TA=25°C)
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum
Maximum Power Dissipation Total Power Dissipation (TC=25°C) Maximum Voltages Currents BVCBO Collector Base Voltage -100 BVCEO Collector Emitter Voltage -100 BVEBO Emitter Base Voltage. Collector Current (Continue) Collector Current (Peak)
Electrical Characteristics (TA=25°C)
Symbol BVCBO BVCEO ICBO ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 Min. -100 -100 Typ. Max. -2.5 -2.8 Unit IC=-1mA IC=-30mA VCB=-100V VCE=-50V VEB=-5V IC=-2A, IB=-8mA IC=-2A, VCE=-4V IC=-1A, VCE=-4V IC=-2A, VCE=-4V VCB=-10V, f=0.1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Test Conditions
HTIP117D
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
100000 10000
Spec. HD200204 Issued Date 2002.04.01 Revised Date 2005.08.18 Page
Saturation Voltage Collcetor Current
10000
Saturation Voltage (mV)
1000
1000
VCE=4V 1000 10000
VCE(sat) IC=250IB
1000
10000
Collector Current (mA)
Collector Current (mA)
Voltage Collector Current
10000
Switching Time Collector Current
VCC=30V, IC=250IB1= -250IB2
1000
Switching Time (us)
Voltage (mV)
Tstg
VBE(ON) VCE=4V 1000 10000
Collector Current (mA)
Collector Current-IC
Capacitance Revierse-Biased Voltage
1000
Safe Operating Area
PT=1ms
Collector Current-IC
PT=1s
Capacitance (pF)
PT=100ms
0.01
Reverse-Biased Voltage
Forward Voltage-VCE
HTIP117D
HSMC Product Specification
TO-126ML Dimension
Spec. HD200204 Issued Date 2002.04.01 Revised Date 2005.08.18 Page
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Date Code Control Code
Note: Green label used pb-free packing Style: 1.Emitter 2.Collector 3.Base Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 7.74 10.87 0.88 1.28 3.50 2.61 1.18 2.88 0.68 3.44 1.88 0.50
Max. 8.24 11.37 1.12 1.52 3.75 3.37 1.42 3.12 0.84 2.30 3.70 2.14 0.51
Typical, Unit:
3-Lead TO-126ML Plastic Package HSMC Package Code:
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HTIP117D
HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HD200204 Issued Date 2002.04.01 Revised Date 2005.08.18 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec 100oC 150oC 60~120 <3oC/sec 183oC 60~150 +0/-5 10~30 <6oC/sec minutes
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 <3oC/sec 217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature
Dipping time 5sec ±1sec 5sec ±1sec
+0/-5
HTIP117D
HSMC Product Specification

HTIP117D EPITAXIAL PLANAR TRANSISTOR Description HTIP11

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