FLASH-ROM MODULE 32MByte (16M 16-Bit) Part HMFN16M16M8G GENERAL DESCRI

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FLASH-ROM MODULE 32MByte (16M 16-Bit) Part HMFN16M16M8G GENERAL DESCRI

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HMFN16M16M8G
FLASH-ROM MODULE 32MByte (16M 16-Bit) Part HMFN16M16M8G GENERAL DESCRIPTION
HMFN16M16M8G high-speed NAND flash read only memory (FROM) module containing 16,777,216 words organized x16bit configuration. module consists eight FROM mounted -pin, double-sided, FR4printed circuit board. Data page read 50ns-cycle time byte. HMFN16M16M8G extended reliability 1,000,000 program/erase cycles providing either (Error Correction Code) real time mapping algorithm. HMF16M16M8G address multiplexed into I/O's Command, address data written through I/O's bringing while low. Data latched rising edge /WE. Command Latch Enable (CLE) address Latch Enable (ALE) used multiplex comma address respectively, pins.
FEATURES
High-density 32MByte design Single 0.5V power supply Command/Address/Data Multiplexed port Organization Memory Cell Array: (4M+128K)bit 8bit Data Register (512+16)bit 8bit Automatic Program Erase Page Program: (512+16)Byte Block Erase: (8K+256)Byte Status Register Fast Write Cycle Time Program time 250us(typ.) Block Erase time 2ms(typ.) FR4-PCB design profile 72-pin SIMM Minimum 1,000,000 write/erase cycle Packages 72-pin SIMM SYMBOL /CE0 /CE0 /CE1 /WEH
ASSIGNMENT
SYMBOL /CE2 72-PIN SIMM VIEW SYMBOL /CE3 /CE3 /WEL
OPTIONS
MARKING
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
HMFN16M16M8G
FUNCTIONAL BLOCK DIAGRAM
I/O(0-15) I/O(0-7) /CE0 I/O(0-7) /WEL /CE1 I/O(0-7) /WEL /CE2 I/O(0-7) /WEL /CE3 /CE3 I/O(8-15) /WEH /CE3 /CE2 I/O(8-15) /WEH /CE2 /CE1 I/O(8-15) /WEH /CE1 /WEL /CE0 I/O(8-15) /WEH /CE0
/WEL /WEH
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage relative Temperature Under Bias Storage Temperature Short Circuit Output Current SYMBOL TBIAS TSTG RATING
HMFN16M16M8G
UNIT
-0.6 +7.0 +125 +150
Stresses greater than those listed under Absolute Maximum Ratings" cause permanent damage device. This stress rating only functional operation device these other conditions above those indicated operating section this specification implied. Exposure absolute maximum rating conditions extended periods affect reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage reference Vss, TA=0 70OC)
PARAMETER Supply Voltage Supply Voltage SYMBOL 4.5V TYP. 5.0V 5.5V
OPERATING CHARACTERISTICS (Recommended operating conditions otherwise noted.
PARAMETER SYMBO Sequential Read Command, Address Operation Current Input Data Input Program Erase Stand-by Current (TTL) Stand-by Current (CMOS) Input Leakage Current Output Leakage Current Input High Voltage, inputs ICC4 ICC6 ICC7 ISB1 ISB2 /CE=VIH,/WP=/SE=0V/Vcc /CE=Vcc-0.2,/WP=/SE=0V/Vcc VIN=0 5.5V VOUT= 5.5V Vcc+0. Input Voltage, inputs Output High Voltage Level Output Voltage Level Output Current(R/B) IOL(R/B) -400Ua 2.1Ma 0.4V -0.3 ICC1 ICC3 tcycle=50ns tcycle=50ns /CE=VIL,IOUT=0mA TEST CONDITION UNIT
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
HMFN16M16M8G
TEST CONDITON (TA=0 +70OC, =5V±10%, unless otherwise noted.)
PARAMETER Input Pulse Levels Input Rise Fall Times Input Output Timinig Levels Output Load VALUE 0.4V 2.6V 0.8V 2.0V Gate CL=100pF
CAPACITANCE (TA=25OC, Vcc=5V, f=1.0MHZ)
PARAMETER Input/Output Capacitance Input Capacitance SYMBOL CI/O TEST CONDITION VIL=0V VIN=0V UNIT
NOTE Capacitance periodically sampled 100% tested.
MODE SELECTION
MODE Read Mode Command Input Address Input(3clock) Write Mode Command Input Address Input(3clock) Data Input Sequential Read &Data Output During Read(Busy) During Program(Busy) During Erase(Busy) Write Protect
0V/Vcc
0V/Vcc
Stand-by
Note should biased CMOS high CMOS standby When high, spare area deselected.
PROGRAM/ ERASE CHARACTERISTICS
PARAMETER Program Time Number Partial Program Cycles Same Page Block Erase Time tBERS SYMBOL tPROG TYP. 0.25 UNIT Cycles
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
HMFN16M16M8G
TIMING CHARACTERISTICS COMMAND ADDRESS DATA INPUT
PARAMETER Set-up Time Hold Time Setup Time Hold Time Pulse Width Setup Time Hold Time Data Setup Time Data Hold Time Write Cycle Time High Hold Time SYMBOL tCLS tCLH tALS tALH UNIT
CHARACTERISTICS OPERATION
PARAMETER Data Transfer from Cell Register Delay (Read Delay (Read cycle) Delay Read) Ready Pulse Width High Busy Read Cycle Time Access Time High Output Hi-Z Hith Output Hi-Z High Hold Time Output Hi-Z Last High Busy sequential read) High Ready case interception read) High Hold Time last serial read) status Output status Output High High Erase Suspend Input Ready
SYMBOL tAR1 tAR2 tREA tRHZ tCHZ tREH tCRY tCEH tRSTO tCSTO tRHW tWHR
50+tr(R/B)
UNIT
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
access time (Read Device Resetting Time tREADID tRST
HMFN16M16M8G
5/10/500/5
Note: goes high within 30ns after rising edge last /RE, R//B Will return time Ready depends value pull-up resistor tied R//B break sequential read cycle, must held high longer than CEH.
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
READ OPERATIONS TIMING
HMFN16M16M8G
RESET TIMING
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
PROGRAM OPERATIONS TIMING
HMFN16M16M8G
CHIP/SECTOR ERASE OPERATION TIMINGS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
HMFN16M16M8G
DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
TOGGLE# TIMINGS (DURING EMBEDDED ALGORITHMS)
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HMFN16M16M8G
ALTERNATE CONTROLLED WRITE OPERATING TIMINGS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
PACKAGE DIMENSIONS
HMFN16M16M8G
108mm
18.50 7.35
2.00 1.02 6.35 95.25 1.27 2.74
2.54 0.25
Gold: 1.04±0.10 1.27 Solder: 0.914±0.10
1.29±0.08
(Solder Gold Plating)
ORDERING INFORMATION
Component Number
Part Number
Density
Org.
Package
Function NAND,Perfect Sector
HMFN16M16M8G
32MByte
16MX 16bit
Pin-SIMM
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.

FLASH-ROM MODULE 32MByte (16M 16-Bit) Part HMFN16M16M8G GENERAL DESCRI

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