FLASH-ROM MODULE 8MByte 8-Bit) Part HMF8M8M4G GENERAL DESCRIPTION
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HMF8M8M4G
FLASH-ROM MODULE 8MByte 8-Bit) Part HMF8M8M4G GENERAL DESCRIPTION
HMF8M8M4G high-speed flash read only memory (FROM) module containing 8,388,608 words organized x8bit configuration. module consists four FROM mounted 72-pin, single-sided, FR4-printed circuit board. Commands written command register using standard microprocessor write timings. Register contents serve input internal state-machine, which controls erase programming circuitry. Write cycles also internally latch addresses data needed programming erase operations. Reading data device similar reading from 12.0V flash EPROM devices. Four chip enable inputs, (/CE1, /CE2, /CE3, /CE4) used enable module's bytes independently. Output enable (/OE) write enable (/WE) memory input output. When FROM module disable condition module becoming power standby mode, system designer low-power design. module components powered from single power supply inputs outputs TTLcompatible.
FEATURES
Part identification HMF8M8M4 (Solder Plating Lead) -120 72-pin SIMM /CE0 /CE1 /CE2 /CE3
ASSIGNMENT
SYMBOL SYMBOL /RY_BY0 /RY_BY1 /RY_BY2 /RY_BY3 72-PIN SIMM VIEW SYMBOL
HMF8M8M4G (Gold Plating Lead) Access time 120ns High-density 8MByte design High-reliability, low-power design Single 0.5V power supply Easy memory expansion inputs outputs TTL-compatible FR4-PCB design profile 72-pin SIMM Minimum 1,000,000 write/erase cycle Flexible sector architecture Embedded algorithms Erase suspend Erase resume
/RESET
OPTIONS
Timing 70ns access 90ns access 120ns access Packages
MARKING
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
FUNCTIONAL BLOCK DIAGRAM
HMF8M8M4G
A0-20 /RY_BY0
/CE0 A0-20 /CE2 A0-20 /CE1 A0-20 /CE3
/RY_BY2
/RY_BY1
/RY_BY3
TRUTH TABLE
MODE STANDBY SELECTED READ WRITE Note means don't care
URL: www.hbe.co.kr REV.02(August,2002)
HIGH-Z HIGH-Z Dout
POWER STANDBY ACTIVE ACTIVE ACTIVE
HANBit Electronics Co., Ltd.
ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage with respect ground other pins Voltage with respect ground Storage Temperature Operating Temperature SYMBOL VIN,OUT TSTG
HMF8M8M4G
RATING -2.0V +7.0V -2.0V +7.0V -65oC +125oC -55oC +125oC
Power Dissipation Stresses greater than those listed under Absolute Maximum Ratings" cause permanent damage device. This stress rating only functional operation device these other conditions above those indicated operating section this specification implied. Exposure absolute maximum rating conditions extended periods affect reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER device Supply Voltages Ground SYMBOL 4.5V TYP. 5.5V
OPERATING CHARACTERISTICS (0oC 0.5V
PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Voltage Active Current Read(1) Active Current Program VIL, /OE=VIH Erase(2) Standby Current Lock-Out Voltage Notes: current listed typically less than 2mA/MHz, with VIH. active while embedded algorithm (program erase) progress Maximum current specifications tested with Vcc=Vcc /CE= ICC3 VLKO ICC2 TEST CONDITIONS Vcc=Vcc max, VIN= Vcc=Vcc max, VOUT= -2.5mA, 12mA, =Vcc VIL, /OE=VIH, SYMBOL ICC1 0.45 ±1.0 ±1.0 UNITS
ERASE PROGRAMMING PERFORMANCE
LIMITS PARAMETER MIN. Sector Erase Time TYP. MAX. Excludes programming prior erasure UNIT COMMENTS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
Byte Programming Time
HMF8M8M4G
Excludes system-level overhead Excludes system-level
Chip Programming Time
14.4
43.2
overhead
TSOP CAPACITANCE
PARAMETER SYMBOL COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Capacitance
UNIT
VOUT
Notes Test conditions f=1.0 MHz.
CHARACTERISTICS Read Only Operations Characteristics
PARAMETER SYMBOLS JEDEC tAVAV tAVQV STANDARD tACC Address Output Delay tELQV tGLQV tEHQZ tGHQZ tAXQX /OE, Whichever Occurs First Chip Enable Output Delay Chip Enable Output Delay Chip Enable Output High-Z Output Enable Output High-Z Output Hold Time From Addresses, Read Cycle Time DESCRIPTION TEST SETUP UNIT
TEST SPECIFICATIONS
TEST CONDITION Output load Output load capacitance, (Including capacitance) Input rise full times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels 0.45-2.4 SPEED OPTIONS 1TTL gate UNIT
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
HMF8M8M4G
5.0V
2.7k Device Under Test IN3064 Equivalent
6.2k
Diodes IN3064 Equivalent
Note 100pF including capacitance
Erase/Program Operations
PARAMETER SYMBOLS JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tWPH tWHWH1 tWHWH2 tVCS Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write Setup Time Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) time DESCRIPTION UNIT
Notes This does include preprogramming time This timing only Sector Protect operations
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
Erase/Program Operations Alternate Controlled Writes
PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 Notes This does include preprogramming time This timing only Sector Protect operations tGHWL tWPH tWHWH1 tWHWH2 Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write Setup Time Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note1)
HMF8M8M4G
UNIT
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
READ OPERATIONS TIMING
HMF8M8M4G
RESET TIMING
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
PROGRAM OPERATIONS TIMING
HMF8M8M4G
CHIP/SECTOR ERASE OPERATION TIMINGS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
HMF8M8M4G
TOGGLE# TIMINGS (DURING EMBEDDED ALGORITHMS)
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HMF8M8M4G
ALTERNATE CONTROLLED WRITE OPERATING TIMINGS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
PACKAGE DIMENSIONS
HMF8M8M4G
108mm
6.35
2.03
1.02
6.35 95.25
1.27
3.34
2.54 0.25
Gold: 1.04±0.10 1.27 Solder: 0.914±0.10
1.29±0.08
(Solder Gold Plating)
ORDERING INFORMATION
Component Number
Part Number
Density
Org.
Package
SPEED
HMF8M8M4G-70 HMF8M8M4G-90 HMF8M8M4G-120
8MByte 8MByte 8MByte
8bit 8bit 8bit
Pin-SIMM Pin-SIMM Pin-SIMM
70ns 90ns 120ns
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
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