FLASH-ROM MODULE 32MByte 32-Bit) Part HMF8M32M8GL GENERAL DESCRIPTION
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HMF8M32M8GL
FLASH-ROM MODULE 32MByte 32-Bit) Part HMF8M32M8GL GENERAL DESCRIPTION
HMF8M32M8GL high-speed flash read only memory (FROM) module containing 8,388,608 words organized x32bit configuration. module consists eight 8bit FROM mounted 72-pin, double-sided, FR4-printed circuit board. Commands written command register using standard microprocessor write timings. Register contents serve input internal state-machine, which controls erase programming circuitry. Write cycles also internally latch addresses data needed programming erase operations. Reading data device similar reading from 12.0V flash EPROM devices. This module bank organized, each bank containing 4Mx32bit, Bank selection selected Bank-E0, Bank-E1 inputs. Byte write enable inputs, (/WE0, /WE1, /WE2, /WE3) used enable module's 8bits independently. Output enable (/OE) write enable (/WE) memory input output. When FROM module disable condition module becoming power standby mode, system designer low-power design. module components powered from single power supply inputs outputs TTL-compatible.
FEATURES
Access time 120ns High-density 32MByte design High-reliability, low-power design Single 0.5V power supply Easy memory expansion inputs outputs TTL-compatible FR4-PCB design profile 72-pin SIMM Minimum 1,000,000 write/erase cycle Sectors erase architecture Sector group protection Temporary sector group unprotection used device AM29F032B -120
ASSIGNMENT
SYMBOL /BANKE1 /WE0 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 /WE1 DQ16 SYMBOL DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 /WE2 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 /WE3 /RESET SYMBOL /BANK-E0
OPTIONS
Timing 75ns access 90ns access 120ns access Packages 72-pin SIMM
MARKING
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
Functional Block Diagram
HMF8M32M8GL
DQ31 A0-A21
A0-21 /WE0 RY-BY /Reset /WE0
A0-21
RY-BY /Reset
A0-21 /WE1 RY-BY /Reset 8-15 /WE1
A0-21
RY-BY /Reset
8-15
A0-21 /WE2 RY-BY /Reset DQ16-23 /WE2
A0-21
RY-BY /Reset
DQ16-23
A0-21 /WE3 /RY_BY /Reset /Bank-E0 /Bank-E1 RY-BY /Reset DQ24-31 /WE3 /RY_BY /Reset
A0-21
RY-BY /Reset
DQ24-31
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
TRUTH TABLE
MODE STANDBY SELECTED READ WRITE ERASE NOTE: means don't care HIGH-Z HIGH-Z
HMF8M32M8GL
POWER STANDBY ACTIVE ACTIVE ACTIVE
ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage with respect ground other pins Voltage with respect ground Storage Temperature SYMBOL VIN,OUT TSTG RATING -2.0V +7.0V -2.0V +7.0V -65oC +150oC
Operating Temperature -55oC +125oC Stresses greater than those listed under Absolute Maximum Ratings" cause permanent damage device. This stress rating only functional operation device these other conditions above those indicated operating section this specification implied. Exposure absolute maximum rating conditions extended periods affect reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER device supply voltage device supply voltages Ground SYMBOL 4.75V 4.5V TYP. 5.25V 5.5V
OPERATING CHARACTERISTICS (0oC 0.5V
PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Voltage Active Current Read(1) Active Current Program VIL, /OE=VIH Erase(2) Standby Current Lock-Out Voltage Notes: current listed typically less than 2mA/MHz, with VIH. active while embedded algorithm (program erase) progress /CE= ICC3 VLKO ICC2 TEST CONDITIONS Vcc=Vcc max, VIN= Vcc=Vcc max, VOUT= -2.5mA, 12mA, =Vcc VIL, /OE=VIH, SYMBOL ICC1 0.45 ±1.0 ±1.0 UNITS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
Maximum current specifications tested with Vcc=Vcc
HMF8M32M8GL
ERASE PROGRAMMING PERFORMANCE
LIMITS PARAMETER MIN. Sector Erase Time Byte Programming Time Chip Programming Time TYP. 28.8 MAX. Excludes programming 86.4 prior erasure Excludes system-level overhead Excludes system-level overhead UNIT COMMENTS
TSOP CAPACITANCE
PARAMETER SYMBOL COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Capacitance
UNIT
VOUT
Notes Test conditions f=1.0 MHz.
CHARACTERISTICS Read Only Operations Characteristics
PARAMETER SYMBOLS JEDEC tAVAV tAVQV STANDARD tACC Address Output Delay tELQV tGLQV tEHQZ tGHQZ tAXQX /OE, Whichever Occurs First Chip Enable Output Delay Chip Enable Output Delay Chip Enable Output High-Z Output Enable Output High-Z Output Hold Time From Addresses, Read Cycle Time DESCRIPTION TEST SETUP UNIT
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
TEST SPECIFICATIONS
TEST CONDITION Output load Output load capacitance, (Including capacitance) Input rise full times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels
HMF8M32M8GL
OTHERS 1TTL gate 0.45-2.4
UNIT
5.0V
2.7k Device Under Test IN3064 Equivalent
6.2k
Diodes IN3064 Equivalent
Note 100pF including capacitance
Write (Erase/Program) Operations
PARAMETER SYMBOLS JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX tGHWL tELWL tWHEH tWLWH tWHWL
URL: www.hbe.co.kr REV.02(August,2002)
DESCRIPTION
UNIT
STANDARD tGHWL tWPH Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Read Recover Time Before Write Setup Time Hold Time Write Pulse Width Write Pulse Width High
HANBit Electronics Co., Ltd.
tWHWH1 tWHWH2 tWHWH1 tWHWH2 tVCS Notes This does include preprogramming time This timing only Sector Protect operations Byte Programming Operation Sector Erase Operation (Note1) time
HMF8M32M8GL
uWrite (Erase/Program) Operations Alternate Controlled Writes
PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 Notes This does include preprogramming time This timing only Sector Protect operations tGHWL tWPH tWHWH1 tWHWH2 Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write Setup Time Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) UNIT
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
READ OPERATIONS TIMING
HMF8M32M8GL
RESET TIMING
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HANBit Electronics Co., Ltd.
PROGRAM OPERATIONS TIMING
HMF8M32M8GL
CHIP/SECTOR ERASE OPERATION TIMINGS
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HANBit Electronics Co., Ltd.
HMF8M32M8GL
DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
TOGGLE# TIMINGS (DURING EMBEDDED ALGORITHMS)
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HANBit Electronics Co., Ltd.
SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HMF8M32M8GL
ALTERNATE CONTROLLED WRITE OPERATING TIMINGS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
PACKAGE DIMENSIONS
HMF8M32M8GL
108mm
6.35
2.03 1.02 6.35 95.25 1.27 3.34
2.54 0.25 1.29±0.08 Gold: 1.04±0.10 1.27 Solder: 0.914±0.10
(Solder Gold Plating)
ORDERING INFORMATION
Component Number
Part Number
Density
Org.
Package
SPEED
HMF8M32M8GL-75 HMF8M32M8GL-90 HMF8M32M8GL-120
32MByte 32MByte 32MByte
32bit 32bit 32bit
Pin-SIMM Pin-SIMM Pin-SIMM
70ns 90ns 120ns
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
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