FLASH-ROM MODULE 2MByte (512K 32-Bit) Part HMF51232M4Y GENERAL DESCRIP
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HMF51232M4Y
FLASH-ROM MODULE 2MByte (512K 32-Bit) Part HMF51232M4Y GENERAL DESCRIPTION
HMF51232M4Y high-speed flash read only memory (FROM) module containing 524,288 words organized x32bit configuration. module consists four 512Kx FROM mounted 72-pin, single-sided, FR4-printed circuit board. Commands written command register using standard microprocessor write timings. Register contents serve input internal state-machine, which controls erase programming circuitry. Write cycles also internally latch addresses data needed programming erase operations. Reading data device similar reading from 12.0V flash EPROM devices. Four chip enable inputs, (/CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) used enable module's bytes independently. Output enable (/OE) write enable (/WE) memory input output. When FROM module disable condition, module becoming power standby mode, system designer low-power design. module components powered from single power supply inputs outputs TTL-compatible.
FEATURES
Access time 55,70, 120ns High-density 2MByte design High-reliability, low-power design Single 0.5V power supply Easy memory expansion wAll inputs outputs TTLcompatible FR4-PCB design profile 72-pin SIMM Minimum 1,000,000 write/erase cycle Sector erases architecture Sector group protection Temporary sector group unprotection
ASSIGNMENT
SYMBOL SYMBOL DQ10 /CE_LM2 DQ15 DQ14 DQ13 DQ12 DQ11 /CE_UM2 DQ23 DQ16 72-PIN SIMM VIEW SYMBOL DQ17 DQ18 DQ22 DQ21 DQ20 DQ19 DQ24 DQ25 DQ26 /CE_UU2 DQ31 DQ30 DQ29 DQ28 DQ27
/CE_LL2
OPTIONS
Timing 55ns access 70ns access 90ns access 120ns access Package 72-pin SIMM
MARKING
FUNCTIONAL BLOCK DIAGRAM
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
HMF51232M4Y
DQ31
A0-18
/CE_LL2 A0-18 /CE_LM2 A0-18 /CE_UM2 A0-18 /CE_UU2 DQ24-31 DQ16-23 8-15
TRUTH TABLE
MODE STANDBY SELECTED READ WRITE Note means don't care HIGH-Z HIGH-Z Dout POWER STANDBY ACTIVE ACTIVE ACTIVE
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage with respect ground other pins Voltage with respect ground Storage Temperature SYMBOL VIN,OUT TSTG
HMF51232M4Y
RATING -2.0V +7.0V -2.0V +7.0V -65oC +125oC
Operating Temperature -55oC +125oC Stresses greater than those listed under Absolute Maximum Ratings" cause permanent damage device. This stress rating only functional operation device these other conditions above those indicated operating section this specification implied. Exposure absolute maximum rating conditions extended periods affect reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER device Supply Voltages device Supply Voltages Ground SYMBOL 4.75V 4.5V TYP. 5.25V 5.5V
OPERATING CHARACTERISTICS (0oC 0.5V
PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Voltage Active Current Read(1) Active Current Program VIL, /OE=VIH Erase(2) Standby Current Lock-Out Voltage Notes: current listed typically less than 2mA/MHz, with VIH. active while embedded algorithm (program erase) progress Maximum current specifications tested with Vcc=Vcc /CE= ICC3 VLKO ICC2 TEST CONDITIONS Vcc=Vcc max, VIN= Vcc=Vcc max, VOUT= -2.5mA, 12mA, =Vcc VIL, /OE=VIH, SYMBOL ICC1 0.45 ±1.0 ±1.0 UNITS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
ERASE PROGRAMMING PERFORMANCE
LIMITS PARAMETER MIN. Sector Erase Time TYP. MAX. UNIT
HMF51232M4Y
COMMENTS Excludes programming
prior erasure Excludes system-level
Byte Programming Time
overhead Excludes system-level
Chip Programming Time
10.8
overhead
CAPACITANCE
PARAMETER SYMBOL COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Capacitance VOUT TYP. UNIT
Notes Test conditions f=1.0 MHz.
TEST CONDITIONS
TEST CONDITION Output load Output load Capacitance, Input Rise Fall Times Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels gate 0.45~2.4 OTHERS UNIT
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
CHARACTERISTICS Read Only Operations Characteristics
PARAMETER SYMBOLS tACC Address Output Delay Chip Enable Output Delay Chip Enable Output Delay Chip Enable Output High-Z Output Enable Output High-Z Output Hold Time From Addresses, /OE, Whichever Occurs First DESCRIPTION SETUP Read Cycle Time TEST
HMF51232M4Y
-120
UNIT
5.0V
2.7k Device Under Test IN3064 Equivalent
6.2k
Diodes IN3064 Equivalent
Note 100pF including capacitance
Erase/Program Operations
PARAMETER SYMBOLS DESCRIPTION Write Cycle Time Address Setup Time Address Hold Time Data Setup Time
HANBit Electronics Co., Ltd.
-120 UNIT
URL: www.hbe.co.kr REV.02(August,2002)
tOES tGHWL tWPH tWHWH1 tWHWH2 tVCS Notes This does include preprogramming time This timing only Sector Protect operations Data Hold Time Output Enable Setup Time Read Recover Time Before Write Setup Time Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) time
HMF51232M4Y
Erase/Program Operations Alternate Controlled Writes
PARAMETER SYMBOLS tGHEL tCPH tWHWH1 tWHWH2 DESCRIPTION Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Read Recover Time Before Write Setup Time Hold Time Pulse Width Pulse Width High Byte Programming Operation Sector Erase Operation (Note) -120 UNIT
Notes This does include preprogramming time.
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
READ OPERATIONS TIMING
HMF51232M4Y
RESET TIMING
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
PROGRAM OPERATIONS TIMING
HMF51232M4Y
CHIP/SECTOR ERASE OPERATION TIMINGS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
HMF51232M4Y
TOGGLE# TIMINGS (DURING EMBEDDED ALGORITHMS)
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HMF51232M4Y
ALTERNATE CONTROLLED WRITE OPERATING TIMINGS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
PACKAGE DIMENSIONS
HMF51232M4Y
0.25
2.54
1.27
Gold: 1.04±0.10 Solder: 0.914±0.10
1.27±0.08mm
(Solder Gold Plating)
ODERING INFORMATION
Part Number Density Org. Package Component Number SPEED
HMF51232M4Y-55 HMF51232M4Y-70 HMF51232M4Y-90 HMF51232M4Y-120
2MByte 2MByte 2MByte 2MByte
Pin-SIMM Pin-SIMM Pin-SIMM Pin-SIMM
5.0V 5.0V 5.0V 5.0V
55ns 70ns 90ns 120ns
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
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