FLASH-ROM MODULE 2MByte (512K 32-Bit) Part HMF51232M4V GENERAL DESCRIP

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FLASH-ROM MODULE 2MByte (512K 32-Bit) Part HMF51232M4V GENERAL DESCRIP

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HMF51232M4V
FLASH-ROM MODULE 2MByte (512K 32-Bit) Part HMF51232M4V GENERAL DESCRIPTION
HMF51232M4V high-speed flash read only memory (FROM) module containing 524,288 words organized x32bit configuration. module consists four 512Kx FROM mounted 72-pin, single-sided, FR4-printed circuit board. Commands written command register using standard microprocessor write timings. Register contents serve input internal state-machine, which controls erase programming circuitry. Write cycles also internally latch addresses data needed programming erase operations. Reading data device similar reading from 12.0V flash EPROM devices. Four chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1) used enable module's bytes independently. Output enable (/OE) write enable (/WE) memory input output. When FROM module disable condition, module becoming power standby mode, system designer low-power design. module components powered from single power supply inputs outputs TTL-compatible.
FEATURES
Access time 55,70, 120ns High-density 2MByte design High-reliability, low-power design Single 0.3V power supply Easy memory expansion wAll inputs outputs TTL- compatible FR4-PCB design profile 72-pin SIMM Minimum 1,000,000 write/erase cycle Sector erases architecture Sector group protection Temporary sector group unprotection Part Identification HMF51232M4V Gold Plate Lead SYMBOL /CE_LL1
ASSIGNMENT
SYMBOL DQ10 /CE_LM1 DQ15 DQ14 DQ13 DQ12 DQ11 /CE_UM1 DQ23 DQ16 72-PIN SIMM VIEW SYMBOL DQ17 DQ18 DQ22 DQ21 DQ20 DQ19 DQ24 DQ25 DQ26 /CE_UU1 DQ31 DQ30 DQ29 DQ28 DQ27
OPTIONS
Timing 55ns access 70ns access 90ns access 120ns access Package
MARKING
72-pin SIMM
FUNCTIONAL BLOCK DIAGRAM
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
HMF51232M4V
DQ31
A0-18
/CE_LL1 A0-18 /CE_LM1 A0-18 /CE_UM1 A0-18 /CE_UU1 DQ24-31 DQ16-23 8-15
TRUTH TABLE
MODE STANDBY SELECTED READ WRITE Note means don't care HIGH-Z HIGH-Z Dout POWER STANDBY ACTIVE ACTIVE ACTIVE
ABSOLUTE MAXIMUM RATINGS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
PARAMETER Voltage with respect ground other pins Voltage with respect ground Power Dissipation Storage Temperature SYMBOL VIN,OUT TSTG
HMF51232M4V
RATING -0.5V 7.0V -0.5V 4.0V -65oC +150oC
Operating Temperature -55oC +125oC Stresses greater than those listed under Absolute Maximum Ratings" cause permanent damage device. This stress rating only functional operation device these other conditions above those indicated operating section this specification implied. Exposure absolute maximum rating conditions extended periods affect reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER device Supply Voltages device Supply Voltages Ground SYMBOL 4.75V 4.5V TYP. 5.25V 5.5V
OPERATING CHARACTERISTICS (0oC 0.5V
PARAMETER Input Load Current Input Load Current Output Leakage Current Active Read Current TEST CONDITIONS Vcc=Vcc max, VIN= Vcc=Vcc max; 12.5V Vcc=Vcc max, VOUT= /CE=VIL, /OE=VIH, Active Write Current Standby Current Reset Current Automatic Sleep Mode Vcc±0.3V; ICC5 Vss±0.3V Input Voltage Input High Voltage Voltage Autoselect Vcc= 3.3V Temporary Sector Unprotect Output Voltage Output High Voltage IOH= -100µA, Vcc=Vcc Lock-Out Voltage Notes: current listed typically less than 2mA/MHz, with VIH. VOH2 VLKO Vcc-0.4 =Vcc IOH= -0.2 Vcc=Vcc VOH1 0.85Vcc 0.45 11.5 12.5 -0.5 Vcc+0.3 VIL, /OE=VIH /CE= VCC±0.3V ICC2 ICC3 ICC4 SYMBOL ILIT ICC1 ±1.0 ±1.0 UNITS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
Maximum currnet specifications tested with Vcc= max. active while Embedded Erase Embedded Program progress. 100%tested.
HMF51232M4V
Automatic sleep mode enables power mode when addresses remain stable tACC
ERASE PROGRAMMING PERFORMANCE
PARAMETER Sector Erase Time Chip Erase Time Byte Programming Time Chip Programming Time Notes: Typical program erase times assume following conditions:25° 3.0V Vcc, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. Under worst case conditions 90°C, Vcc=2.7V(3.0V for-55R), 1,000,000cycles. typical chip programming time considerably less than maximum chip programming time listed, since most bytes program faster than maximum program times listed. pre-programming step Embedded Erase algorithm, bytes programmed before erasure. System-level overhead time required execute two- four-bus-cycle sequence program command. Table further information command definitions. device minimum guaranteed erase program cycle endurance 1,000,000 cycles. TPYP 13.5 UNIT COMMENTS Excludes programming prior erasure Excludes system-level overhead
CAPACITANCE
PARAMETER SYMBOL COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Capacitance VOUT TYP. UNIT
Notes Test conditions f=1.0 MHz.
TEST CONDITIONS
TEST CONDITION Output load Output load Capacitance, Input Rise Fall Times Input Pulse Levels Input timing measurement reference levels
URL: www.hbe.co.kr REV.02(August,2002)
-55R, gate
-90, -120
UNIT
HANBit Electronics Co., Ltd.
Output timing measurement reference levels
HMF51232M4V
CHARACTERISTICS Read Only Operations Characteristics
PARAMETE TEST SYMBOLS tACC Address Output Delay Chip Enable Output Delay Chip Enable Output Delay Chip Enable Output High-Z Output Enable Output High-Z Output Hold Time From Addresses, /OE, Whichever Occurs First Read Cycle Time DESCRIPTION SETUP -120 UNIT
5.0V
2.7k Device Under Test IN3064 Equivalent
6.2k
Diodes IN3064 Equivalent
Note 100pF including capacitance
Erase/Program Operations
PARAMETE DESCRIPTION -120 UNIT
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
tOES tGHWL tWPH tWHWH1 tWHWH2 tVCS Notes This does include preprogramming time This timing only Sector Protect operations Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write Setup Time Hold Time Write Pulse Width Write Pulse Width High Programming Operation Sector Erase Operation (Note1) time
HMF51232M4V
Erase/Program Operations Alternate Controlled Writes
PARAMETE SYMBOLS tGHEL tCPH tWHWH1 tWHWH2 Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Read Recover Time Before Write Setup Time Hold Time Pulse Width Pulse Width High Programming Operation Sector Erase Operation (Note) DESCRIPTION -120 UNIT
Notes This does include preprogramming time.
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
READ OPERATIONS TIMING
HMF51232M4V
RESET TIMING
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
PROGRAM OPERATIONS TIMING
HMF51232M4V
CHIP/SECTOR ERASE OPERATION TIMINGS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
HMF51232M4V
TOGGLE# TIMINGS (DURING EMBEDDED ALGORITHMS)
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HMF51232M4V
ALTERNATE CONTROLLED WRITE OPERATING TIMINGS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
PACKAGE DIMENSIONS
HMF51232M4V
0.25
2.54 Gold: 1.04±0.10 Solder: 0.914±0.10 1.27±0.08mm
1.27
(Solder Gold Plating)
ODERING INFORMATION
Part Number Density Org. Package Component Number SPEED
HMF51232M4V-55 HMF51232M4V-70 HMF51232M4V-90 HMF51232M4V-120
2MByte 2MByte 2MByte 2MByte
Pin-SIMM Pin-SIMM Pin-SIMM Pin-SIMM
3.3V 3.3V 3.3V 3.3V
55ns 70ns 90ns 120ns
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.

FLASH-ROM MODULE 2MByte (512K 32-Bit) Part HMF51232M4V GENERAL DESCRIP

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