FLASH-ROM MODULE 2MByte (512K 32-Bit) Part HMF51232M4D GENERAL DESCRIP

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FLASH-ROM MODULE 2MByte (512K 32-Bit) Part HMF51232M4D GENERAL DESCRIP

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HMF51232M4D
FLASH-ROM MODULE 2MByte (512K 32-Bit) Part HMF51232M4D GENERAL DESCRIPTION
HMF51232M4D high-speed flash read only memory (FROM) module containing 524,288 words organized x32bit configuration. module consists four 512Kx FROM mounted 72-pin, single-sided, FR4-printed circuit board. Commands written command register using standard microprocessor write timings. Register contents serve input internal state-machine, which controls erase programming circuitry. Write cycles also internally latch addresses data needed programming erase operations. Reading data device similar reading from 12.0V flash EPROM devices. Four chip enable inputs, (/CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) used enable module's bytes independently. Output enable (/OE) write enable (/WE) memory input output. When FROM module disable condition, module becoming power standby mode, system designer low-power design. module components powered from single power supply inputs outputs TTL-compatible.
ASSIGNMENT FEATURES
Access time 55,70, 120ns High-density 2MByte design High-reliability, low-power design Single 0.5V power supply Easy memory expansion wAll inputs outputs TTL- compatible FR4-PCB design profile 72-pin SIMM Minimum 1,000,000 write/erase cycle Sector erases architecture Sector group protection Temporary sector group unprotection Part Identification HMF51232M4D Gold Plate Lead SYMBOL /CE_LL2 SYMBOL DQ10 /CE_LM2 DQ15 DQ14 DQ13 DQ12 DQ11 /CE_UM2 DQ23 DQ16 SYMBOL DQ17 DQ18 DQ22 DQ21 DQ20 DQ19 DQ24 DQ25 DQ26 /CE_UU2 DQ31 DQ30 DQ29 DQ28 DQ27
OPTIONS
Timing 55ns access 70ns access 90ns access 120ns access Package 72-pin SIMM
MARKING
72-PIN SIMM VIEW
FUNCTIONAL BLOCK DIAGRAM
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics co., Ltd.
HMF51232M4D
DQ31
A0-18
/CE_LL2 A0-18 /CE_LM2 A0-18 /CE_UM2 A0-18 /CE_UU2 DQ24-31 DQ16-23 8-15
TRUTH TABLE
MODE STANDBY SELECTED READ WRITE Note means don't care HIGH-Z HIGH-Z Dout POWER STANDBY ACTIVE ACTIVE ACTIVE
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics co., Ltd.
ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage with respect ground other pins Voltage with respect ground Power Dissipation Storage Temperature SYMBOL VIN,OUT TSTG
HMF51232M4D
RATING -2.0V +7.0V -2.0V +7.0V -65oC +125oC
Operating Temperature -55oC +125oC Stresses greater than those listed under Absolute Maximum Ratings" cause permanent damage device. This stress rating only functional operation device these other conditions above those indicated operating section this specification implied. Exposure absolute maximum rating conditions extended periods affect reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER device Supply Voltages device Supply Voltages Ground SYMBOL 4.75V 4.5V TYP. 5.25V 5.5V
OPERATING CHARACTERISTICS (0oC 0.5V
PARAMETER Input Load Current Input Lodad Current Output Leakage Current Active Read Current(Note1,2) Active Write(Program/Erase) VIL, /OE=VIH Current(Note 2,3,4) Standby Current(Note2) Input Level Input High Level /CE= ICC3 -0.5 Vcc+0. Voltage Autoselect Sector Protect Output Voltage Output High Voltage Lock-Out Voltage Notes: current listed typically less than 2mA/MHz, with VIH. active while embedded algorithm (program erase) progress 12mA, =Vcc -2.5mA, VLKO Vcc= 5.25V 0.45 12.5 ICC2 TEST CONDITIONS Vin=Vss VCC, Vcc= Vcc= Max, 12.5V VOUT= VCC, VCC= VIL, /OE=VIH, SYMBOL IL1T ICC1 ±1.0 ±1.0 UNITS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics co., Ltd.
Maximum current specifications tested with Vcc=Vcc
HMF51232M4D
ERASE PROGRAMMING PERFORMANCE
LIMITS PARAMETER MIN. Sector Erase Time Chip Erase Time Byte Programming Time Chip Programming Time Notes: Typical program erase times assume follwing Additionally,programming typicals assume checkerboard pattern. Under worst case conditions 90°C, Vcc=4.5V(4.75V for-55), 1,000,000 cycles. typical chip programming time considerably less than maximum chip programming time listed, since most bytes program faster than maximum byte program time listed. maximum byte program time given exceeded, only then does device DQ5= section DQ5for further information. pre-programming step Embedded Erase algorithm, bytes programmed before erasure. System-level overhead time required execute four-bus-cycle command sequence programming. Table further formation command definitions. device guaranteed minimum erase program cycle endurance 1,000,000cycles. TYP. MAX. 10.8 Excludes programming prior erasure Excludes system-level overhead UNIT COMMENTS
CAPACITANCE
PARAMETER SYMBOL COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Capacitance
TYP.
UNIT
VOUT
Notes Test conditions f=1.0 MHz.
TEST CONDITIONS
TEST CONDITION Output load Output load Capacitance, Input Rise Fall Times Input Pulse Levels gate 0.45~2.4 OTHERS UNIT
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics co., Ltd.
Input timing measurement reference levels Output timing measurement reference levels
HMF51232M4D
CHARACTERISTICS Read Only Operations Characteristics
PARAMETE TEST SYMBOLS tACC Address Output Delay Chip Enable Output Delay Chip Enable Output Delay Chip Enable Output High-Z Output Enable Output High-Z Output Hold Time From Addresses, /OE, Whichever Occurs First Read Cycle Time DESCRIPTION SETUP -120 UNIT
5.0V
2.7k Device Under Test IN3064 Equivalent
6.2k
Diodes IN3064 Equivalent
Note 100pF including capacitance
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics co., Ltd.
Erase/Program Operations
PARAMETE SYMBOLS tOES tGHWL tWPH tWHWH1 tWHWH2 tVCS Notes This does include preprogramming time This timing only Sector Protect operations Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write Setup Time Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) time DESCRIPTION
HMF51232M4D
-120 UNIT
Erase/Program Operations Alternate Controlled Writes
PARAMETE SYMBOLS tGHEL Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Read Recover Time Before Write Setup Time Hold Time
HANBit Electronics co., Ltd.
DESCRIPTION
-120 UNIT
URL: www.hbe.co.kr REV.02(August,2002)
tCPH tWHWH1 tWHWH2 Pulse Width Pulse Width High Byte Programming Operation Sector Erase Operation (Note)
HMF51232M4D
Notes This does include preprogramming time.
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics co., Ltd.
READ OPERATIONS TIMING
HMF51232M4D
RESET TIMING
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics co., Ltd.
PROGRAM OPERATIONS TIMING
HMF51232M4D
CHIP/SECTOR ERASE OPERATION TIMINGS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics co., Ltd.
DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
HMF51232M4D
TOGGLE# TIMINGS (DURING EMBEDDED ALGORITHMS)
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics co., Ltd.
SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HMF51232M4D
ALTERNATE CONTROLLED WRITE OPERATING TIMINGS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics co., Ltd.
PACKAGE DIMENSIONS
HMF51232M4D
0.25
2.54
1.27
Gold: 1.04±0.10 Solder: 0.914±0.10
1.27±0.08mm
(Solder Gold Plating)
ODERING INFORMATION
Part Number Density Org. Package Component Number SPEED
HMF51232M4D-55 HMF51232M4D-70 HMF51232M4D-90 HMF51232M4D-120
2MByte 2MByte 2MByte 2MByte
Pin-SIMM Pin-SIMM Pin-SIMM Pin-SIMM
5.0V 5.0V 5.0V 5.0V
55ns 70ns 90ns 120ns
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics co., Ltd.

FLASH-ROM MODULE 2MByte (512K 32-Bit) Part HMF51232M4D GENERAL DESCRIP

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