FLASH-ROM MODULE 16MByte 32-Bit), 72-Pin SIMM, Part HMF4M32M8GL GENERA
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HMF4M32M4GL
FLASH-ROM MODULE 16MByte 32-Bit), 72-Pin SIMM, Part HMF4M32M8GL GENERAL DESCRIPTION
HMF4M32M8GL high-speed flash read only memory (FROM) module containing 4,194,304 words organized x32bit configuration. module consists eight 8bit FROM mounted -pin, single-sided, FR4-printed circuit board. Commands written command register using standard microprocessor write timings. Register contents serve input internal state-machine, which controls erase programming circuitry. Write cycles also internally latch addresses data needed programming erase operations. Reading data device similar reading from 12.0V flash EPROM devices. Four chip enable inputs, (/WE0, /WE1, /WE2, /WE3) used enable module's 8bits independently. Output enable (/OE) write enable (/WE) memory input output. When FROM module disable condition module becoming power standby mode, system designer -power design. module components powered from single power supply inputs outputs TTLcompatible.
FEATURES
Access time 120ns High-density 16MByte design High-reliability, low-power design Single 0.5V power supply Easy memory expansion inputs outputs TTL-compatible FR4-PCB design profile 72-pin SIMM Minimum 1,000,000-write/erase cycle Sectors erase architecture Sector group protection Temporary sector group unprotect used device MX29F016 -120 /BANKE1 /WE0
ASSIGNMENT
SYMBOL SYMBOL DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 /WE2 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 /WE3 /RESET SYMBOL /BANK-E0
/RY_BY DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 /WE1 DQ16
OPTION
Timing 75ns access 90ns access 120ns access Packages 72-pin SIMM
MARKING
72-PIN SIMM VIEW
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
FUNCTIONAL BLOCK DIAGRAM
HMF4M32M4GL
DQ31 /WE0
A0-20 RY-BY /Reset RY-BY /Reset
A0-20
A0-20 /WE1 RY-BY /Reset
A0-20 RY-BY /Reset
8-15
A0-20 DQ0-7 /WE2 RY-BY /Reset
A0-20 DQ0-7 RY-BY /Reset
16-23
A0-20 /WE3 /BANK-E0 /RY_BY /Reset RY-BY /Reset DQ0-7
A0-20 RY-BY /Reset DQ0-7
24-31
/BANK-E1
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
TRUTH TABLE
MODE STANDBY SELECTED READ WRITE ERASE NOTE: means don't care HIGH-Z HIGH-Z
HMF4M32M4GL
POWER STANDBY ACTIVE ACTIVE ACTIVE
ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage with respect ground other pins Voltage with respect ground Storage Temperature SYMBOL VIN,OUT TSTG RATING -2.0V +7.0V -2.0V +7.0V -65oC +150
Operating Temperature -55oC +125 Stresses greater than those listed under Absolute Maximum Ratings" cause permanent damage device. This stress rating only functional operation device these other conditions above those ndicated operating section this specification implied. Exposure absolute maximum rating conditions extended periods affect reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER device supply voltage device supply voltages Ground SYMBOL 4.75V 4.5V TYP. 5.25V 5.5V
OPERATING CHARACTERISTICS (0oC 0.5V
PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Voltage Active Current Read(1) Active Current Program VIL, /OE=VIH Erase(2) Standby Current Lock-Out Voltage Notes: current listed typically less than 2mA/MHz, with active while embedded algorithm (program erase) progress
URL: www.hbe.co.kr REV.02(August,2002)
TEST CONDITIONS Vcc=Vcc max, Vcc=Vcc max, VOUT= -2.5mA, 12mA, =Vcc VIL, /OE=VIH,
SYMBOL ICC1 ICC2 ICC3 VLKO
±1.0 ±1.0
UNITS
0.45
/CE=
HANBit Electronics Co., Ltd.
Maximum current specifications tested with Vcc=Vcc
HMF4M32M4GL
ERASE PROGRAMMING PERFORMANCE
LIMITS PARAMETER MIN. Sector Erase Time Byte Programming Time Chip Programming Time TYP. 28.8 MAX. Excludes programming 86.4 prior erasure Excludes system-level overhead Excludes system-level overhead UNIT COMMENTS
TSOP CAPACITANCE
PARAMETER SYMBOL COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Capacitance VOUT UNIT
Notes Test conditions f=1.0 MHz.
CHARACTERISTICS Read Only Operations Characteristics
PARAMETER SYMBOLS JEDEC tAVAV tAVQV STANDARD tACC Address Output Delay tELQV tGLQV tEHQZ tGHQZ tAXQX /OE, Whichever Occurs First Chip Enable Output Delay Chip Enable Output Delay Chip Enable Output High-Z Output Enable Output High-Z Output Hold Time From Addresses, Read Cycle Time DESCRIPTION TEST SETUP UNIT
TEST SPECIFICATIONS
TEST CONDITION Output load Output load capacitance, (Including capacitance) OTHERS 1TTL gate UNIT
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
Input rise full times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels
HMF4M32M4GL
0.45-2.4
5.0V
2.7k Device Under Test IN3064 Equivalent
6.2k
Diodes IN3064 Equivalent
Note 100pF including capacitance
Write (Erase/Program) Operations
PARAMETER SYMBOLS JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 STANDARD tGHWL tWPH tWHWH1 tWHWH2 tVCS Notes This does include preprogramming time
URL: www.hbe.co.kr REV.02(August,2002)
DESCRIPTION
UNIT
Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Read Recover Time Before Write Setup Time Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) time
HANBit Electronics Co., Ltd.
This timing only Sector Protect operations
HMF4M32M4GL
uWrite(Erase/Program) Operations Alternate Controlled Writes
PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 Notes This does include preprogramming time This timing only Sector Protect operations tGHWL tWPH tWHWH1 tWHWH2 Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write Setup Time Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) UNIT
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
READ OPERATIONS TIMING
HMF4M32M4GL
RESET TIMING
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
PROGRAM OPERATIONS TIMING
HMF4M32M4GL
CHIP/SECTOR ERASE OPERATION TIMINGS
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HANBit Electronics Co., Ltd.
DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
HMF4M32M4GL
TOGGLE# TIMINGS (DURING EMBEDDED ALGORITHMS)
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HMF4M32M4GL
ALTERNATE CONTROLLED WRITE OPERATING TIMINGS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
PACKAGE DIMENSIONS
HMF4M32M4GL
108mm
6.35
2.03 1.02 6.35 95.25 1.27 3.34
2.54 0.25
1.27±0.08
Gold: 1.04±0.10 1.27 Solder: 0.914±0.10
(Solder Gold Plating)
ORDERING INFORMATION
Part Number
Density
Org.
Package
Component Number
SPEED
HMF4M32M8GL-75 HMF4M32M8GL-90 HMF4M32M8GL-120
16MByte 16MByte 16MByte
32bit 32bit 32bit
Pin-SIMM Pin-SIMM Pin-SIMM
75ns 90ns 120ns
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
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