FLASH-ROM MODULE 16MByte 32Bit), 72-Pin SIMM, Part HMF4M32M8G GENERAL

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FLASH-ROM MODULE 16MByte 32Bit), 72-Pin SIMM, Part HMF4M32M8G GENERAL

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HMF4M32M8G
FLASH-ROM MODULE 16MByte 32Bit), 72-Pin SIMM, Part HMF4M32M8G GENERAL DESCRIPTION
HMF4M32M8G high-speed flash read only memory (FROM) module containing 8,388,608 words organized x32bit configuration. module consists eight 8bit FROM mounted -pin, double-sided, FR4-printed circuit board. Commands written command register using standard microprocessor write timings. Register contents serve input internal state-machine, which controls erase programming circuitry. Write cycles also internally latch addresses data needed programming erase operations. Reading data device similar reading from 12.0V flash EPROM devices. Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, CE_LL2) enable module's bytes independently. Outputs enable (/OE) write enable (/WE) memory input output.When FROM module disable condition module becoming power standby mode, system designer power design. module components powered from single power supply inputs outputs TTL-compatible.
FEATURES
Part Identifications HMF4M32M8G 16Mbyte, 72-pin SIMM, Gold HMF4M32M8 16Mbyte, 72-pin SIMM, Solder wAccess time 120ns High-density 16MByte design High-reliability, low-power design Single 0.5V power supply Easy memory expansion inputs outputs TTL-compatible FR4-PCB design profile 72-pin SIMM Minimum 1,000,000 write/erase cycle Sectors erase architecture Sector group protection Temporary sector group unprotection used device Am29F016B MBM29F016-90PFTN -120 120ns access Packages
ASSIGNMENT
SYMBOL /RESET /CE-LL2 /CE-LL1 SYMBOL DQ10 /CE-LM2 /CE-LM1 DQ15 DQ14 DQ13 DQ12 DQ11 /RY_BY /CE-UM2 /CE-UM1 DQ23 DQ16 SYMBOL DQ17 DQ18 DQ22 DQ21 DQ20 DQ19 DQ24 DQ25 DQ26 /CE-UU2 /CE-UU1 DQ31 DQ30 DQ29 DQ28 DQ27
OPTIONS
Timing 75ns access 90ns access
MARKING
72-PIN SIMM 72-pin SIMM VIEW
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
Functional Block Diagram
0-DQ31 A0-A20 DQ32
HMF4M32M8G
A0-20 DQ0-7 /CE-LL1 A0-20 DQ8-15 /CE-LM1 A0-20 /CE-UM1 DQ16-23 /CE-LM2 /CE-LL2
A0-20 DQ0-7
A0-20 DQ8-15
A0-20 /CE-UM2 16-23
A0-20 /CE-UU1 /CE-UU2 DQ24-31
A0-20 24-31
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
TRUTH TABLE
MODE STANDBY SELECTED READ WRITE ERASE NOTE: means don't care HIGH-Z HIGH-Z
HMF4M32M8G
POWER STANDBY ACTIVE ACTIVE ACTIVE
ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage with respect ground other pins Voltage with respect ground Storage Temperature SYMBOL VIN,OUT TSTG RATING -2.0V +7.0V -2.0V +7.0V -65oC +125oC
Operating Temperature -55oC +125 Stresses greater than those listed under Absolute Maximum Ratings" cause permanent damage devic This stress rating only functional operation device these other conditions above those indicated operating section this specification implied. Exposure absolute maximum rating conditions extende periods affect reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER device Supply Voltages Ground SYMBOL 4.5V TYP. 5.5V
OPERATING CHARACTERISTICS (0oC 0.5V
PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Voltage Active Current Read(1) Active Current Program VIL, /OE=VIH Erase(2) Standby Current Lock-Out Voltage Notes: current listed typically less than 2mA/MHz, with active while embedded algorithm (program erase) progress Maximum current specifications tested with Vcc=Vcc
URL: www.hbe.co.kr REV.02(August,2002)
TEST CONDITIONS Vcc=Vcc max, Vcc=Vcc max, VOUT= -2.5mA, 12mA, =Vcc VIL, /OE=VIH,
SYMBOL ICC1 ICC2 ICC3 VLKO
±1.0 ±1.0
UNITS
0.45
/CE=
HANBit Electronics Co., Ltd.
ERASE PROGRAMMING PERFORMANCE
LIMITS PARAMETER MIN. Sector Erase Time TYP. MAX. UNIT
HMF4M32M8G
COMMENTS Excludes programming
prior erasure Excludes system-level overhead Excludes system-level
Byte Programming Time
Chip Programming Time
14.4
43.2
overhead
TSOP CAPACITANCE
PARAMETER SYMBOL COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Capacitance
UNIT
VOUT
Notes Test conditions f=1.0 MHz.
CHARACTERISTICS Read Only Operations Characteristics
PARAMETER SYMBOLS JEDEC tAVAV tAVQV STANDARD tACC Address Output Delay tELQV tGLQV tEHQZ tGHQZ tAXQX /OE, Whichever Occurs First Chip Enable Output Delay Chip Enable Output Delay Chip Enable Output High-Z Output Enable Output High-Z Output Hold Time From Addresses, Read Cycle Time DESCRIPTION TEST SETUP UNIT
TEST SPECIFICATIONS
TEST CONDITION Output load SPEED OPTIONS 1TTL gate UNIT
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
Output load capacitance, (Including capacitance) Input rise full times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels 0.45-2.4
HMF4M32M8G
5.0V
2.7k Device Under Test IN3064 Equivalent
6.2k
Diodes IN3064 Equivalent
Note 100pF including capacitance
Erase/Program Operations
PARAMETER SYMBOLS JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tWPH tWHWH1 tWHWH2 Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write Setup Time Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) DESCRIPTION UNIT
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
tVCS Notes This does include preprogramming time This timing only Sector Protect operations time
HMF4M32M8G
Erase/Program Operations Alternate Controlled Writes
PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 Notes This does include preprogramming time This timing only Sector Protect operations tGHWL tWPH tWHWH1 tWHWH2 Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write Setup Time Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) UNIT
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
READ OPERATIONS TIMING
HMF4M32M8G
RESET TIMING
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
PROGRAM OPERATIONS TIMING
HMF4M32M8G
CHIP/SECTOR ERASE OPERATION TIMINGS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
HMF4M32M8G
TOGGLE# TIMINGS (DURING EMBEDDED ALGORITHMS)
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HMF4M32M8G
ALTERNATE CONTROLLED WRITE OPERATING TIMINGS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
PACKAGE DIMENSIONS
HMF4M32M8G
108mm
6.35
2.03
1.02
6.35 95.25
1.27
3.34
2.54 0.25
1.27±0.08
Gold: 1.04±0.10 1.27 Solder: 0.914±0.10
(Solder Gold Plating)
ORDERING INFORMATION
Component Number
Part Number
Density
Org.
Package
SPEED
HMF4M32M8G-75 HMF4M32M8G-90 HMF4M32M8G-120
16MByte 16MByte 16MByte
32bit 32bit
Pin-SIMM Pin-SIMM Pin-SIMM
70ns 90ns 120ns
32bit
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.

FLASH-ROM MODULE 16MByte 32Bit), 72-Pin SIMM, Part HMF4M32M8G GENERAL

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