FLASH-ROM MODULE 12MByte 32-Bit) ,72pin-SIMM, 3.3V Part HMF3M32M6V GEN
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HMF3M32M6V
FLASH-ROM MODULE 12MByte 32-Bit) ,72pin-SIMM, 3.3V Part HMF3M32M6V GENERAL DESCRIPTION
HMF3M32M6VA high-speed flash read only memory (FROM) module containing 6,291,456 words organized x32bit configuration. module consists FROM mounted 72-pin, single-sided, FR4-printed circuit board. Commands written command register using standard microprocessor write timings. Register contents serve input internal state-machine, which controls erase programming circuitry. Write cycles also internally latch addresses data needed programming erase operations. Reading data device similar reading from other flash EPROM devices. Output enable (/OE) write enable (/WE) memory input output. When FROM module disable condition module becoming power standby mode, system designer -power design. module components powered from single +3.0V power supply.
FEATURES
Access time 70,80, 120ns High-density 12MByte design High-reliability, low-power design Single 0.3V power supply Easy memory expansion Hardware reset pin(RESET#) FR4-PCB design profile 72-pin SIMM Minimum 1,000,000 write/erase cycle Flexible sector architecture Embedded algorithms Erase suspend Erase resume -120
ASSIGNMENT
SYMBOL /RESET /CE_1L /CE_2L DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 /CE_3H DQ16 SYMBOL DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 /CE_1H /CE_2H DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 /CE_3L SYMBOL
OPTIONS
Timing 70ns access 80ns access 90ns access 120ns access
MARKING
Packages 72-pin SIMM
72-PIN SIMM VIEW
URL: www.hbe.co.kr REV.02(August,2002)
HANbit Electronics Co., Ltd.
FUNCTIONAL BLOCK DIAGRAM
HMF3M32M6V
DQ31 /CE_1L
A0-19 0-15 RY-BY /Reset A0-19 DQ16-31 RY-BY /Reset DQ16-31
/CE_1H
A0-19 0-15 /CE_2L RY-BY /Reset
A0-19 16-31 RY-BY /Reset
DQ16-31
/CE_2H
A0-19 /CE_3L /RY_BY /Reset DQ0-15 RY-BY /Reset
A0-19 DQ16-31 RY-BY /Reset 16-31
/CE_3H
URL: www.hbe.co.kr REV.02(August,2002)
HANbit Electronics Co., Ltd.
ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage Relative Voltage Supply Relative Power Dissipation Storage Temperature SYMBOL VIN,OUT TSTG
HMF3M32M6V
RATING -0.5V +4.0V -0.5V +4.0V -65oC +150
Operating Temperature -55oC +125 Stresses greater than those listed under Absolute Maximum Ratings" cause perman damage device. This stress rating only functional operation device these other conditions above those indicated operating section this specification implied. Exposure absolute maximum rating conditions extended periods affect reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER Supply Voltage Ground Input High Voltage Input Voltage SYMBOL 2.7V -0.5 TYP. 3.0V 3.6V Vcc+0.3V 0.8V
CHARACTERISTICS (CMOS Compatible)
PARAMET DESCRIPTION ILIT Input Load Current Input Load Current Output Leakage Current VIN=Vss Vcc, Vcc=Vcc Vcc= A9=12.5V VOUT= Vcc, Vcc= /CE=VIK, /OE=VIH Active Read Current ICC1 (Note1) /CE=VIL, /OE=VIH Word Mode Active Write Current ICC2 (Note ICC3 ICC4 During Reset Automatic Sleep ICC5 Mode(Note3) Input Voltage Input High Voltage VIL=Vss±0.3V -0.5 0.7xVcc Vcc+0.3 VIH=Vcc±0.3V; Standby Current Standby Current Vcc=Vcc /Reset=Vss±0.3V Vcc=Vcc /CE,/Reset=Vcc±0.3V /CE=VIL, /OE=VIH 5MHZ 1MHZ Byte Mode 5MHZ 1MHZ ±1.0 ±1.0 TEST CONDITIONS TYP. UNIT
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HANbit Electronics Co., Ltd.
Voltage Autoselect Temporary Unprotect VOH1 Output High Voltage VOH2 VLKO Note current listed typically less 2mA/MHz, with Typical 3.0V. active while Embedded Erase Embedded Program progress. Lock-Out Voltage IOH=-100uA, Vcc= Output Voltage IOL=4.0mA, Vcc=Vcc 0.85xVc IOH=-2.0mA, Vcc=Vcc Vcc-0.4 Vcc=3.3V 11.5
HMF3M32M6V
12.5 0.45
Automatic sleep mode enables power mode when addresses remain stable ACC+30ns. Typical sleep mode current 200nA. 100% tested.
LATCHUP CHARACTERISTICS
DESCRIPTION Input Voltage with respect pins except Pins -1.0V (Including A9,/OE, /Reset) Input Voltage with respect Pins Current Includes pins except Vcc. Test conditions: Vcc=3.0V, time. -1.0V -100mA Vcc+1.0V +100mA 12.5V
DATA RETENTION
PARAMETER Minimum Pattern Data Retention Time TEST CONDITIONS
UNIT Years Years
ERASE PROGRAMMING PERFORMANCE
PARAMETER (NOTE1) Sector Erase Time Chip Erase Time Byte Programming Time Word Programming Time Chip Programming Time Byte Mode (Note3) Notes
URL: www.hbe.co.kr REV.02(August,2002)
(NOTE2)
UNIT
COMMENTS Excludes programming prior erasure (Note4)
Excludes system level overhead (Note5)
Word Mode
HANbit Electronics Co., Ltd.
HMF3M32M6V
Typical program erase times assume following conditions: 3.0V Vcc, 1,000,000 cycles. Additionally programming typical assume checkerboard pattern. Under worst case conditions Vcc=2.7V, 1,000,000 cycles. typical chip programming time considerably less than maximum chip programming time listed, since most bytes program faster than maximum program times listed pre-programming step Embedded Erase algorithm, programmed before erasure. System-level overhead time required excute two-or four-bus-cycle sequence program command. table further information command definitions. device minimum erase program cycle endurance 1,000,000 cycles.
SOP/TSOP CAPACITANCE
PARAMETER SYMBOL COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Capacitance VOUT TYP. UNIT
Notes Sampled, 100% tested 2.Test conditions f=1.0 MHz.
TEST SPECIFICATIONS
TEST CONDITION Output load Output load capacitance, (Including capacitance) Input rise fall times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels -90/ -120 1TTL gate UNIT
URL: www.hbe.co.kr REV.02(August,2002)
HANbit Electronics Co., Ltd.
3.0V
HMF3M32M6V
2.7k Device Under Test IN3064 Equivalent
6.2k
Diodes IN3064 Equivalent
Note 100pF including capacitance
CHARACTERISTICS Erase Program Operations
PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX Standard tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL (/OE High Low) tWPH tWHWH1 tWHWH2 tVCS tBUSY Note: 100% tested.
URL: www.hbe.co.kr REV.02(August,2002)
UNIT
Write Cycle Time (Note1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recovery Time Before Write
Setup Time Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation (Note2) Word Sector Erase Operation (Note2) Setup Time (Note1) Recovery Time from RY//BY Program/ Erase Valid RY//BY Delay
HANbit Electronics Co., Ltd.
"Erase Programming Performance" section more Information
HMF3M32M6V
Alternate Controlled Erase/ Program Operations
PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVEL tELAX tDVEH tEHDX Standard tOES tGHEL tWLEL tEHWH tELEH tEHEL tWHWH1 tWHWH2 tGHEL (/OE High Low) tCPH tWHWH1 Operation (Note2) tWHWH2 Sector Erase Operation (Note2) Word Setup Time Hold Time Pulse Width Pulse Width High Programming Byte Write Cycle Time (Note1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recovery Time Before Write UNIT
Note: 100% tested. "Erase Programming Performan section more Information.
URL: www.hbe.co.kr REV.02(August,2002)
HANbit Electronics Co., Ltd.
READ OPERATIONS TIMING
HMF3M32M6V
RESET TIMING
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HANbit Electronics Co., Ltd.
PROGRAM OPERATIONS TIMING
HMF3M32M6V
CHIP/SECTOR ERASE OPERATION TIMINGS
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HANbit Electronics Co., Ltd.
DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
HMF3M32M6V
TOGGLE# TIMINGS (DURING EMBEDDED ALGORITHMS)
URL: www.hbe.co.kr REV.02(August,2002)
HANbit Electronics Co., Ltd.
SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HMF3M32M6V
ALTERNATE CONTROLLED WRITE OPERATING TIMINGS
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HANbit Electronics Co., Ltd.
PACKAGE DIMENSIONS
HMF3M32M6V
107.95± 0.2mm 3.38±
17.5± 0.2mm 6.35± 0.2mm
2.03± 1.0±
6.35 0.2mm 95.25±
1.27±
2.79 0.2mm
2.54 0.25
Gold: 1.04±0.10 1.27 Solder: 0.914±0.10 1.29±0.08
(Solder Gold Plating)
ORDERING INFORMATION
Component Number
Part Number
Density
Org.
Package
Speed
HMF3M32M6V-70 HMF3M32M6V-80 HMF3M32M6V-90 HMF3M32M6V-120
12MByte 12MByte 12MByte 12MByte
32bit 32bit 32bit 32bit
Pin-SIMM Pin-SIMM Pin-SIMM Pin-SIMM
3.3V 3.3V 3.3V 3.3V
70ns 80ns 90ns 120ns
URL: www.hbe.co.kr REV.02(August,2002)
HANbit Electronics Co., Ltd.
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