FLASH-ROM MODULE 8MByte 32-Bit), 72pin-SIMM, Part HMF2M32M8A GENERAL D
|
|
|
Top Searches for this datasheet
HMF2M32M8A
FLASH-ROM MODULE 8MByte 32-Bit), 72pin-SIMM, Part HMF2M32M8A GENERAL DESCRIPTION
HMF2M32M8A high-speed flash read only memory (FROM) module containing 2,097,152 words organized x32bit configuration. module consists eight FROM mounted -pin, double-sided, FR4-printed circuit board. HMF2M32M8A entirely command compatible with JEDEC standard -bit EEPROMs. Commands written command register using standard microprocessor write timings. Register contents serve input internal state-machine, which controls erase programming circuitry. Write cycles also internally latch addresses data needed programming erase operations. Reading data device similar reading from 12.0V flash EPROM devices. Eight chip enable inputs, (/1CSLL, /2CSLL, /1CSLH, /2CSLH, /1CSHL, /2CSHL, /1CSHH, /2CSHH used enable module's bytes independently. Output enable (/OE) write enable (/WE) memory input output. When FROM module disable condition module becoming power standby mode, system designer -power design. module components powered from single power supply inputs outputs TTL-compatible.
ASSIGNMENT FEATURES
Access time 120ns High-density 8MByte design High-reliability, low-power design Single 0.5V power supply Easy memory expansion inputs outputs TTL-compatible FR4-PCB design profile 72-pin SIMM Minimum 1,000,000 write/erase cycle Sectors erase architecture Sector group protection Temporary sector group unprotection used device Am29F080B -120 120ns access Packages 72-pin SIMM SYMBOL /1CSLL /2CSLL /1CSLH /2CSLH SYMBOL /1CSHL /2CSHL /1CSHH /2CSHH /RESET SYMBOL
OPTIONS
Timing 75ns access 90ns access
MARKING
72-PIN SIMM VIEW
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
FUNCTIONAL BLOCK DIAGRAM
HMF2M32M8A
0-31 0-D31 A2-A22
A0-19
A0-20 D0-7
A0-20 D0-7
/1CSLL
/2CSLL
A0-20 D8-15
A0-20 D8-15
/1CSLH
/2CSLH
A0-20 D16-23
A0-20 D16-23
/1CSHL
/2CSHL
A0-20 D24-31
A0-20 D24-31
/2CSHH
/1CSHH
TRUTH TABLE
MODE STANDBY SELECTED READ WRITE ERASE
URL: www.hbe.co.kr REV.02(August,2002)
HIGH-Z HIGH-Z
POWER STANDBY ACTIVE ACTIVE ACTIVE
HANBit Electronics Co., Ltd.
NOTE: means don't care
HMF2M32M8A
ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage with respect ground other pins Voltage with respect ground Storage Temperature SYMBOL VIN,OUT TSTG RATING -2.0V +7.0V -2.0V +7.0V -65oC +125oC
Operating Temperature -55oC +125 Stresses greater than those listed under Absolute Maximum Ratings" cause permanent damage device. This stress rating only nctional operation device these other conditions above those indicated operating section this specification implied. Exposure absolute maximum rating conditions extended periods affect reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER device Supply Voltages device Supply Voltages Ground SYMBOL 4.75V 4.5V TYP. 5.25V 5.5V
OPERATING CHARACTERISTICS (0oC 0.5V
PARAMETER Input Leakage Current Vcc=Vcc max, VOUT= Output Leakage Current Output High Voltage Output Voltage Active Current Read(1) Active Current Program Erase(2) Standby Current Lock-Out Voltage Notes: current listed typically less than 2mA/MHz, with /CE= ICC3 VLKO VIL, /OE=VIH ICC2 -2.5mA, 12mA, =Vcc VIL, /OE=VIH, ICC1 0.85x 0.45 TEST CONDITIONS Vcc=Vcc max, SYMBOL ±8.0 UNITS
±8.0
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
active while embedded algorithm (program erase) progress Maximum current specifications tested with Vcc=Vcc
HMF2M32M8A
ERASE PROGRAMMING PERFORMANCE
LIMITS PARAMETER MIN. Sector Erase Time Byte Programming Time Chip Programming Time TYP. MAX. Excludes programming 21.6 prior erasure Excludes system-level overhead Excludes system-level overhead UNIT COMMENTS
CAPACITANCE
PARAMETER SYMBOL COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Capacitance
UNIT
VOUT
Notes Test conditions f=1.0 MHz.
CHARACTERISTICS Read Only Operations Characteristics
PARAMETER SYMBOLS DESCRIPTION JEDEC STANDAR tAVAV tAVQV tACC Address Output Delay tELQV tGLQV tEHQZ tGHQZ Chip Enable Output Delay Chip Enable Output Delay Chip Enable Output High-Z Output Enable Output High-Z Output Hold Time From Addresses, tAXQX /OE, Whichever Occurs First Read Cycle Time TEST SETUP -120 UNIT
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
TEST SPECIFICATIONS
TEST CONDITION Output load Output load capacitance, (Including capacitance) Input rise full times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels
HMF2M32M8A
OTHERS 1TTL gate
UNIT
0.45-2.4 0.8, 0.8,
5.0V IN3064 Equivalent Device Under 6.2k Diodes IN3064 Equivalent 2.7k
Note 100pF including capacitance
Erase/Program Operations
PARAMETER SYMBOLS JEDEC STANDARD tAVAV tAVWL tWLAX tDVWH tWHDX tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tWPH tWHWH1 tWHWH2 tVCS DESCRIPTION Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write Setup Time Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) time -120 UNIT
Notes This does include preprogramming time This timing only Sector Protect operations
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
Erase/Program Operations Alternate Controlled Writes
PARAMETER SYMBOLS JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX tGHEL tWLEL tEHWH tELEH tEHEL tWHWH1 tWHWH2 Notes This does include preprogramming time This timing only Sector Protect operations STANDARD tGHEL tCPH tWHWH1 tWHWH2 Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Read Recover Time Before Write Setup Time Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) DESCRIPTION
HMF2M32M8A
-120
UNIT
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
READ OPERATIONS TIMING
HMF2M32M8A
RESET TIMING
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
PROGRAM OPERATIONS TIMING
HMF2M32M8A
CHIP/SECTOR ERASE OPERATION TIMINGS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
HMF2M32M8A
TOGGLE# TIMINGS (DURING EMBEDDED ALGORITHMS)
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HMF2M32M8A
ALTERNATE CONTROLLED WRITE OPERATING TIMINGS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
PACKAGE DIMENSIONS
(Front-Side)
HMF2M32M8A
(Rear-Side)
2.54 0.25
Gold: 1.04±0.10 1.27 Solder: 0.914±0.10
1.27±0.08
(Solder Gold Plating)
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
ORDERING INFORMATION
HMF2M32M8A
Part Number
Density
Org.
Package
Component Number
SPEED
HMF2M32M8A-75 HMF2M32M8A-90 HMF2M32M8A-120
8MByte 8MByte 8MByte
72Pin-SIMM 72Pin-SIMM 72Pin-SIMM
5.0V 5.0V 5.0V
75ns 90ns 120ns
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
Other recent searches
XZVG67W - XZVG67W XZVG67W Datasheet
TPCM8006 - TPCM8006 TPCM8006 Datasheet
PDB-V101 - PDB-V101 PDB-V101 Datasheet
MDT10P72 - MDT10P72 MDT10P72 Datasheet
LS02-1A85-PA-1500W - LS02-1A85-PA-1500W LS02-1A85-PA-1500W Datasheet
K6X0808C1D - K6X0808C1D K6X0808C1D Datasheet
AZ317 - AZ317 AZ317 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
