Flash-ROM Module 8MByte (2Mx32Bit), 72Pin-SIMM, 3.3V Design Part HMF2M

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Flash-ROM Module 8MByte (2Mx32Bit), 72Pin-SIMM, 3.3V Design Part HMF2M

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HMF2M32M4VGL
Flash-ROM Module 8MByte (2Mx32Bit), 72Pin-SIMM, 3.3V Design Part HMF2M32M4VGL GENERAL DESCRIPTION
HMF2M32M4VGL high-speed flash read only memory (FROM) module containing 2,097,152 words organized x32bit configuration. module consists four 8bit FROM mounted -pin, single-sided, FR4-printed circuit board. Commands written command register using standard microprocessor write timings. Register contents serve input internal state-machine, which controls erase programming circuitry. Write cycles also internally latch addresses data needed programming erase operations. Reading data device similar reading from 12.0V flash EPROM devices. Four chip enable inputs, (/WE0, /WE1, /WE2, /WE3) used enable module's bits independently. Output enable (/OE) write enable (/WE) memory input output. When FROM module disable condition module becoming power standby mode, system designer -power design. module components powered from single 3.3V power supply inputs outputs TTLcompatible.
FEATURES
Access time 120ns High-density 8MByte design High-reliability, low-power design Single 3.3V 0.3V power supply Easy memory expansion inputs outputs TTL-compatible FR4-PCB design profile 72-pin SIMM Minimum 1,000,000 write/erase cycle Sectors erase architecture Sector group protection Temporary sector group unprotection Symbol /WE0 /RY_BY DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 /WE1 DQ16
ASSIGNMENT
Symbol DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 /WE2 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 /WE3 /RESET Symbol /BANKE0
OPTIONS
Timing 70ns access 80ns access 90ns access 120ns access Packages 72-pin SIMM
MARKING
-120
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HANBit Electronics Co., Ltd.
FUNCTIONAL BLOCK DIAGRAM
HMF2M32M4VGL
DQ31 A0-19 /WE0 RY-BY /Reset
A0-20 8-15 /WE1 RY-BY /Reset
A0-20 DQ16-23 /WE2 RY-BY /Reset
A0-20 DQ24-31 /WE3 /BANK-E0 /RY_BY /Reset RY-BY /Reset
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TRUTH TABLE
MODE STANDBY SELECTED READ WRITE ERASE NOTE: means don't care /RESET Vcc±0.3V
HMF2M32M4VGL
/BYTE=L HIGH-Z HIGH-Z DOUT
POWER STANDBY ACTIVE ACTIVE ACTIVE
ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage with respect ground other pins Voltage with respect ground SYMBOL VIN,OUT RATING -0.5V Vcc+0.5V -0.5V +4.0V
Storage Temperature
TSTG
-65oC +150oC
Operating Temperature -55oC +125 Stresses greater than those listed under Absolute Maximum Ratings" cause permanent damage device This stress rating only functional operation device these other conditions above those indicated operating section this specification implied. Exposure absolute maximum rating conditions extended periods affect reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER device Supply Voltages Ground SYMBOL 2.7V TYP. 3.6V
OPERATING CHARACTERISTICS
PARAMETER Input Load Current Input Loda Current Output Leakage Current TEST CONDITIONS Vcc=Vcc max, Vcc=Vcc max, A9=12.5 Vcc=Vcc max, OUT= /CE= VIL, /OE= VIH, Byte Mode Active Read Current /CE= VIL, /OE= VIH, Word Mode Active Write Current VIL, /OE=VIH (Note2,3,4) Standby Current(Note2) /CE, /RESET=Vcc±0.3V ICC3 ICC2 5MHz 1MHz 5MHz 1MHz ICC1 SYMBO IL1T ±1.0 ±1.0
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Standby Current During /RESET=Vss±0.3V Reset(Note2) Automatic Sleep Mode(Note2,5) Input Voltage Input High Voltage Voltage Autoselect 3.3V Temporary Sector Unprotect Output Voltage 4.0mA, =Vcc -2.0mA, =Vcc Output High Voltage -100µA, =Vcc Lock-Out Voltage(Note VLKO Notes Vcc-0.4 VIH= ±0.3V; VIL= ±0.3V; VCC5 ICC4
HMF2M32M4VGL
-0.5 11.5
Vcc+0
12.5 0.45
Current listed typically less than ma/MHz,with VIH. Typical 3.0V. Maximum Specifications tested with Vcc=Vccmax. active while Embedded Erase Embedded Program progress
ERASE PROGRAMMING PERFORMANCE
LIMITS PARAMETER MIN. Sector Erase Time Chip Erase Time Byte Programming Time Chip Programming Time TYP. MAX. Excludes system-level overhead Excludes programming prior erasure UNIT COMMENTS
TSOP CAPACITANCE
PARAMETER SYMBOL COUT CIN2 PARAMETER DESCRIPTION Input Capacitance Output Capacitance Control Capacitance
TEST SETUP VOUT
UNIT
Notes Test conditions f=1.0 MHz.
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CHARACTERISTICS Read Only Operations Characteristics
PARAMETER SYMBOLS DESCRIPTION JEDEC STANDARD tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tACC Read Cycle Time (Note Address Output Delay Chip Enable Output Delay Chip Enable Output Delay Chip Enable Output High-Z Output Enable Output High-Z Read Output Enable Toggle Hold Time(Note tAXQX Notes 100% tested. Figure Table test specifications. /Data Polling Output Hold Time From Addresses, /OE, Whichever Occurs First TEST SETUP -70R
HMF2M32M4VGL
Speed Options UNIT -120
TEST SPECIFICATIONS
TEST CONDITION Output load Output load capacitance,CL (Including capacitance) Input rise fall times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels 0.0-3.0 70R, 1TTL gate UNIT
3.3V 2.7k Device Under Test IN3064 Equivalent
6.2k
Diodes IN3064 Equivalent
Note 100pF including capacitance
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Erase/Program Operations
PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tWPH tWHWH1 Operation tWHWH2 tVCS tBUSY Delay Notes 100% tested. "Erase Programming Performance section more information. Word Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write Setup Time Hold Time Write Pulse Width Write Pulse Width High Byte Programming Byte
HMF2M32M4VGL
Speed Options UNIT
Sector Erase Operation (Note1) time Recovery Time from RY//BY Program/Erase Valid RY//BY
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HANBit Electronics Co., Ltd.
Erase/Program Operations Alternate Controlled Writes
PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVEH tEHDX STANDARD tOES tGHEL tWLEL tEHEH tELEH TEHEL tWHWH1 tGHEL tCPH tWHWH1 Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write Setup Time Hold Time Pulse Width Pulse Width High Byte Programming Operation tWHWH2 Notes 100% tested. "Erase Programming Performance section more information. tWHWH2 Sector Erase Operation Byte Word -70R
HMF2M32M4VGL
Speed Options UNIT
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READ OPERATIONS TIMING
HMF2M32M4VGL
RESET TIMING
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HANBit Electronics Co., Ltd.
PROGRAM OPERATIONS TIMING
HMF2M32M4VGL
CHIP/SECTOR ERASE OPERATION TIMINGS
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DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
HMF2M32M4VGL
TOGGLE# TIMINGS (DURING EMBEDDED ALGORITHMS)
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HANBit Electronics Co., Ltd.
SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HMF2M32M4VGL
ALTERNATE CONTROLLED WRITE OPERATING TIMINGS
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HANBit Electronics Co., Ltd.
PACKAGE DIMENSIONS
HMF2M32M4VGL
2.54 0.25
Gold: 1.04±0.10 1.27 Solder: 0.914±0.10
1.27±0.08
(Solder Gold Plating)
ORDERING INFORMATION
Component Number
Part Number
Density
Org.
Package
SPEED
HMF2M32M4VGL-70 HMF2M32M4VGL-80 HMF2M32M4VGL-90 HMF2M32M4VGL-120
8MByte 8MByte 8MByte 8MByte
32Bit 32Bit 32Bit 32Bit
72Pin -SIMM 72Pin -SIMM 72Pin -SIMM 72Pin -SIMM
3.3V 3.3V 3.3V 3.3V
70ns 80ns 90ns 120ns
www.hbe.co.kr REV,02(August,2002)
HANBit Electronics Co., Ltd.

Flash-ROM Module 8MByte (2Mx32Bit), 72Pin-SIMM, 3.3V Design Part HMF2M

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