FLASH-ROM MODULE 4MByte 32-Bit), 72pin-SIMM, Part HMF1M32M8S (Switchin

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FLASH-ROM MODULE 4MByte 32-Bit), 72pin-SIMM, Part HMF1M32M8S (Switchin

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HMF1M32M8S
FLASH-ROM MODULE 4MByte 32-Bit), 72pin-SIMM, Part HMF1M32M8S (Switching write enable/disable)
HMF1M32M8S high-speed flash read only memory (FROM) module containing 1,048,576 words organized x32bit configuration. module consists eight 512K FROM mounted -pin, both-sided, FR4-printed circuit board.In order write control, HMF1M32M8S provides Write Enable Write Disable selection switch. Commands written command register using standard microprocessor write timings. Register contents serve input internal state-machine, which controls erase programming circuitry. Write cycles also internally latch addresses data needed programming erase operations. Reading data device similar reading from 12.0V flash EPROM devices. Eight chip enable inputs, (/CE-UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) used enable module's bytes independently. Output enable (/OE) write enable (/WE) memory input output When FROM module disable condition module becoming power standby mode, system designer -power design. module components powered from single power supply inputs outputs compatible
FEATURES
Access time: 120ns wSwitching write enable disable. High-density 4MByte design High-reliability, low-power design Single 0.5V power supply Easy memory expansion inputs outputs TTL-compatible FR4-PCB design profile 72-pin SIMM Minimum 100,000 write/erase cycle Sector erases architecture Sector group protection Temporary sector group unprotection -120 SYMBOL /CE-LL2 /CE-LL1
ASSIGNMENT
SYMBOL DQ10 /CE-LM2 /CE-LM1 DQ15 DQ14 DQ13 DQ12 DQ11 SYMBOL /CE-UM2 /CE-UM1 DQ23 DQ16 DQ17 DQ18 DQ22 DQ21 DQ20 DQ19 SYMBOL DQ24 DQ25 DQ26 /CE-UU2 /CE-UU1 DQ31 DQ30 DQ29 DQ28 DQ27
OPTIONS
Timing 70ns access 90ns access 120ns access Packages 72-pin SIMM
MARKING
SIMM VIEW
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co.,Ltd.
FUNCTIONAL BLOCK DIAGRAM
HMF1M32M8S
0-DQ31 A0-A18
A0-18
A0-18 DQ0-7 /CE-LL2
A0-18 DQ0-7
/CE-LL1
A0-18 DQ8-15
A0-18 DQ8-15
/CE-LM1
/CE-LM2
A0-18 16-23 /CE-UM2
A0-18 DQ16-23
/CE-UM1
A0-18 DQ24-31
A0-18 24-31
/CE-UU2
/CE-UU1
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co.,Ltd.
HMF1M32M8S
TRUTH TABLE
MODE STANDBY SELECTED READ WRITE NOTE: means don't care HIGH-Z HIGH-Z POWER STANDBY ACTIVE ACTIVE ACTIVE
ABSOLUTE MAXIMUM RATINGS
RATING Ambient Operating Temperature Storage Temperature Applied Input Voltage Applied Output Voltage VALUE -0.5V 7.0V 7.0V Ground Potential -0.2V 7.0V -0.2V 12.5V
wNOTICE: Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS cause permanent damage device. This stress rating only functional operational sections this specification implied. Exposure absolute maximum rating conditions extended period affect reliability. Specifications contained within following tables subject change.
RECOMMENDED OPERATING CONDITIONS
PARAMETER device Supply Voltages device Supply Voltages Ground SYMBOL 4.75V 4.5V TYP. 5.25V 5.5V
OPERATING CHARACTERISTICS (0oC 0.5V
PARAMETER Input Leakage Current Output Leakage Current Input High Voltage TEST CONDITIONS Vcc=Vcc max, Vcc=Vcc max, VOUT= SYMBOL 0.7x ±1.0 UNITS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co.,Ltd.
Input Voltage Output High Voltage Output Voltage Active Current Read Active Current Program Active Current Erase Standby Current Notes -2.5mA, 12mA, =Vcc /CE=VIL, /OE=VIH /CE=VIL, /OE=VIH /CE=VIL, /OE=VIH /CE= ICC1 ICC2 ICC2 Icc3
HMF1M32M8S
-0.5 0.45
1.V1L min.=-1.0V pulse width equal less than 50ns. min. =-2.0V pulse width equal less than 2.V1H max. =VCC+1.5V pulse width equal less than 20ns. over specified maximum value, read operation cannot guaranteed.
SWITCHING TEST CIRCUITS
5.0V
2.7k Device Under Test 6.2k Diodes IN3064 Equivalent
Note 100pF including capacitance
CHARACTERISTICS Read Only Operations Characteristics
SPEED PARAMETER tACC tOEH DESCRIPTION Read Cycle Time Address Access time Chip Enable Access time Output Enable time Chip Enable Output High-Z Output Enable Hold Time -120 UNIT
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co.,Ltd.
Output Hold Time From Addresses,
HMF1M32M8S
Erase/Program Operations
PARAMETER tOES tGHWL tWPH tWHWH1 WHWH2 tVCS DESCRIPTION Write Cycle Time (Note Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write Setup Time Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation time (Note -120 UNIT
Notes 100% tested
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co.,Ltd.
READ OPERATIONS TIMING
HMF1M32M8S
RESET TIMING
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co.,Ltd.
PROGRAM OPERATIONS TIMING
HMF1M32M8S
CHIP/SECTOR ERASE OPERATION TIMINGS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co.,Ltd.
DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
HMF1M32M8S
TOGGLE# TIMINGS (DURING EMBEDDED ALGORITHMS)
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co.,Ltd.
SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HMF1M32M8S
ALTERNATE CONTROLLED WRITE OPERATING TIMINGS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co.,Ltd.
PACKAGE DIMMENSIONS
HMF1M32M8S
2.54 0.25 1.27±0.08
1.27
Gold: 1.04±0.10 Solder: 0.914±0.10
(Solder Gold Plating)
ORDERING INFORMATION
Component Number
Part Number
Density
Org.
Package
SPEED
HMF1M32M8S-70 HMF1M32M8S-90 HMF1M32M8S-120
4MByte 4MByte 4MByte
32bit 32bit 32bit
Pin-SIMM Pin-SIMM Pin-SIMM
5.0V 5.0V 5.0V
70ns 90ns 120ns
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co.,Ltd.

FLASH-ROM MODULE 4MByte 32-Bit), 72pin-SIMM, Part HMF1M32M8S (Switchin

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