FLASH-ROM MODULE 4MByte 32-Bit), 72pin-SIMM, Part HMF1M32M8G HMF1

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FLASH-ROM MODULE 4MByte 32-Bit), 72pin-SIMM, Part HMF1M32M8G HMF1

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HMF1M32M8G
FLASH-ROM MODULE 4MByte 32-Bit), 72pin-SIMM, Part HMF1M32M8G
HMF1M32M8G high-speed flash read only memory (FROM) module containing 1,048,576 words organized x32bit configuration. module consists eight 512K FROM mounted -pin, single-sided, FR4-printed circuit board. Commands written command register using standard microprocessor write timings. Register contents serve input internal state-machine, which controls erase programming circuitry. Write cycles also internally latch addresses data needed programming erase operations. Reading data device similar reading from 12.0V flash EPROM devices. Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) used enable module's bytes independently. Output enable (/OE) write enable (/WE) memory input output.When FROM module disable condition module becoming power standby mode, system designer power design. module components powered from single power supply inputs outputs TTL-compatible.
FEATURES
Access time: 120ns High-density 4MByte design High-reliability, low-power design Single 0.5V power supply Easy memory expansion inputs outputs TTL-compatible FR4-PCB design profile 72-pin SIMM Minimum 1,000,000 write/erase cycle Sector erases architecture Sector group protection Temporary sector group unprotection -120 120ns access Packages 72-pin SIMM SYMBOL /CE_LL2 /CE_LL1
ASSIGNMENT
SYMBOL DQ10 /CE_LM2 /CE_LM1 DQ15 DQ14 DQ13 DQ12 DQ11 /CE_UM2 /CE_UM1 DQ23 DQ16 SYMBOL DQ17 DQ18 DQ22 DQ21 DQ20 DQ19 DQ24 DQ25 DQ26 /CE_UU2 /CE_UU1 DQ31 DQ30 DQ29 DQ28 DQ27
OPTIONS
Timing
55ns access 70ns access 90ns access
MARKING
www.hbe.co.kr REV.02(August,2002)
72-PIN SIMM VIEW
HANBit Electronics Co., Ltd.
FUNCTIONAL BLOCK DIAGRAM
0-DQ31 A0-A18
HMF1M32M8G
A0-18
A0-18 DQ0-7 /CE-LL2
A0-18 DQ0-7
/CE-LL1
A0-18 DQ8-15
A0-18 DQ8-15
/CE-LM1
/CE-LM2
A0-18 16-23 /CE-UM2
A0-18 DQ16-23
/CE-UM1
A0-18 DQ24-31
A0-18 24-31
/CE-UU2
/CE-UU1
TRUTH TABLE
MODE STANDBY SELECTED READ WRITE ERASE NOTE: means don't care HIGH-Z HIGH-Z POWER STANDBY ACTIVE ACTIVE ACTIVE
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HANBit Electronics Co., Ltd.
ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage with respect ground other pins Voltage with respect ground Storage Temperature SYMBOL VIN,OUT TSTG
HMF1M32M8G
RATING -2.0V +7.0V -2.0V +7.0V -65oC +125oC
Operating Temperature -55oC +125 Stresses greater than those listed under Absolute Maximum Ratings" cause permanent damage device. This stress rating only functional operation device these other conditions those indicated operating section this specification implied. Exposure absolute maximum rating conditions extended periods affect reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER device Supply Voltages device Supply Voltages Ground SYMBOL 4.75V 4.5V TYP. 5.25V 5.5V
OPERATING CHARACTERISTICS (0oC 0.5V
PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Voltage Active Current Read(1) Active Current Program VIL, /OE=VIH Erase(2) Standby Current Lock-Out Voltage Notes: current listed typically less than 2mA/MHz, with active while embedded algorithm (program erase) progress Maximum current specifications tested with Vcc=Vcc /CE= ICC3 VLKO ICC2 TEST CONDITIONS Vcc=Vcc max, Vcc=Vcc max, VOUT= -2.5mA, 12mA, =Vcc VIL, /OE=VIH, SYMBOL ICC1 0.45 ±1.0 ±1.0 UNITS
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HANBit Electronics Co., Ltd.
ERASE PROGRAMMING PERFORMANCE
LIMITS PARAMETER MIN. Sector Erase Time TYP. MAX. UNIT
HMF1M32M8G
COMMENTS Excludes programming
prior erasure Excludes system-level overhead Excludes system-level
Byte Programming Time
Chip Programming Time
10.8
overhead
CAPACITANCE
PARAMETER SYMBOL COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Capacitance
TYP.
UNIT
VOUT
Notes Test conditions f=1.0 MHz.
CHARACTERISTICS Read Only Operations Characteristics
PARAMETER SYMBOLS JEDEC tAVAV tAVQV STANDARD tACC Address Output Delay tELQV tGLQV tEHQZ tGHQZ tAXQX /OE, Whichever Occurs First Chip Enable Output Delay Chip Enable Output Delay Chip Enable Output High-Z Output Enable Output High-Z Output Hold Time From Addresses, Read Cycle Time DESCRIPTION TEST SETUP UNIT
Notes Test Conditions Output Load 1TTL gate Output Load Capacitance case 55ns-30pF Input rise fall times case 55ns-5ns Input pulse levels .45V 2.4V, case 55ns- 0.0V-3.0V Timing measurement reference level
www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
Input 0.8V, Incase 55ns-1.5V Output 2.0V, case 55ns-1.5V 5.0V
HMF1M32M8G
2.7k Device Under Test IN3064 Equivalent
6.2k
Diodes IN3064 Equivalent
Note 100pF including capacitance
Erase/Program Operations
PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tWPH tWHWH1 tWHWH2 tVCS Notes This does include preprogramming time This timing only Sector Protect operations Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write Setup Time Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) time UNIT
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HANBit Electronics Co., Ltd.
Erase/Program Operations Alternate Controlled Writes
PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVEL tELAX tDVEH tEHDX STANDARD tOES tGHEL tWLEL tEHWH tELEH tEHEL tWHWH1 tWHWH2 tGHEL tCPH tWHWH1 tWHWH2 Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write Setup Time Hold Time Pulse Width Pulse Width High Byte Programming Operation Sector Erase Operation (Note)
HMF1M32M8G
UNIT
Notes This does include preprogramming time.
www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
READ OPERATIONS TIMING
HMF1M32M8G
RESET TIMING
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HANBit Electronics Co., Ltd.
PROGRAM OPERATIONS TIMING
HMF1M32M8G
CHIP/SECTOR ERASE OPERATION TIMINGS
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HANBit Electronics Co., Ltd.
DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
HMF1M32M8G
TOGGLE# TIMINGS (DURING EMBEDDED ALGORITHMS)
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HANBit Electronics Co., Ltd.
SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HMF1M32M8G
ALTERNATE CONTROLLED WRITE OPERATING TIMINGS
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HANBit Electronics Co., Ltd.
PACKAGE DIMENSIONS
HMF1M32M8G
108mm
21.59 6.35
2.03 1.02 6.35 95.25 1.27 3.34
2.54 0.25
1.29±0.08 Gold: 1.04±0.10 1.27 Solder: 0.914±0.10
(Solder Gold Plating)
ORDERING INFORMATION
Part Number
Density
Org.
Package
Component Number
SPEED
HMF1M32M8G-55 HMF1M32M8G-70 HMF1M32M8G-90 HMF1M32M8G-120
4MByte 4MByte 4MByte 4MByte
72pin-SIMM 72pin-SIMM 72pin-SIMM 72pin-SIMM
5.0V 5.0V 5.0V 5.0V
55ns 70ns 90ns 120ns
www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.

FLASH-ROM MODULE 4MByte 32-Bit), 72pin-SIMM, Part HMF1M32M8G HMF1

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