FLASH-ROM MODULE 4MByte 32-Bit),72pin-SIMM, Part HMF1M32M4GL HMF1
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HMF1M32M4GL
FLASH-ROM MODULE 4MByte 32-Bit),72pin-SIMM, Part HMF1M32M4GL
HMF1M32M4GL high-speed flash read only memory (FROM) module containing 1,048,576 words organized x32bit configuration. module consists four FROM mounted -pin, single-sided, FR4-printed circuit board. HMF1M32M4GL entirely command compatible with JEDEC single-power-supply flash standard. Commands written command register using standard microprocessor write timings. Register contents serve input internal state-machine, which controls erase programming circuitry. Write cycles also internally latch addresses data needed programming erase operations. Reading data device similar reading from 12.0V flash EPROM devices. Four chip enable inputs, (/WE0, /WE1, /WE2, /WE3) used enable module's 8bits independently. Output enable (/OE) write enable (/WE) memory input output. When FROM module disable condition module becoming power standb mode, system designer low-power design. module components powered from single power supply inputs outputs TTL-compatible.
FEATURES
Access time 120ns High-density 4MByte design High-reliability, low-power design Single 0.5V power supply Easy memory expansion inputs outputs TTL-compatible FR4-PCB design profile 72-pin SIMM Minimum 1,000,000 write/erase cycle Sector erase architecture Sector group protection Temporary sector group unprotection used device AM29F080
ASSIGNMENT
SYMBOL
/WE0 RY-/BY DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 /WE1 DQ16
SYMBOL
DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 /WE2 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 /WE3 /Reset
SYMBOL
/BANK-E0
OPTIONS
Timing 75ns access 90ns access 120ns access Packages 72-pin SIMM
MARKING
-120
72-PIN SIMM VIEW
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
HMF1M32M4GL
FUNCTIONAL BLOCK DIAGRAM
DQ31 A0-19
/WE0
RY-BY
/Reset
A0-19 8-15 /WE1
RY-BY
/Reset
A0-19
/WE2
RY-BY /Reset
DQ16-23
A0-19
/WE3
/BANK-E0 RY-/BY
DQ24-31 RY-BY /Reset
/Reset
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
HMF1M32M4GL
TRUTH TABLE
MODE STANDBY SELECTED READ WRITE ERASE NOTE: means don't care HIGH-Z HIGH-Z POWER STANDBY ACTIVE ACTIVE ACTIVE
ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage with respect ground other pins Voltage with respect ground Storage Temperature SYMBOL VIN,OUT TSTG RATING -2.0V +7.0V -2.0V +7.0V -65oC +125oC
Operating Temperature -55oC +125 Stresses greater than those listed under Absolute Maximum Ratings" cause permanent damage device. This stress rating only functional operation device these other conditions above those indicated operating section this specification implied. Exposure absolute maximum rating conditions extended periods affect reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER device Supply Voltages device Supply Voltages Ground SYMBOL 4.75V 4.5V TYP. 5.25V 5.5V
OPERATING CHARACTERISTICS (0oC 0.5V
PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Voltage Active Current Read(1) Active Current Program VIL, /OE=VIH Erase(2) Standby Current Lock-Out Voltage Notes:
URL: www.hbe.co.kr REV.02(August,2002)
TEST CONDITIONS Vcc=Vcc max, Vcc=Vcc max, VOUT= -2.5mA, 12mA, =Vcc VIL, /OE=VIH,
SYMBOL ICC1 ICC2 ICC3 VLKO
±1.0 ±1.0
UNITS
0.45
/CE=
HANBit Electronics Co., Ltd.
current listed typically less than than 2mA/MHz, with active while embedded algorithm (program erase) progress Maximum current specifications tested with =Vcc
HMF1M32M4GL
ERASE PROGRAMMING PERFORMANCE
LIMITS PARAMETER MIN. Sector Erase Time TYP. MAX. Excludes programming prior erasure Byte Programming Time Excludes system-level overhead Excludes system-level Chip Programming Time 21.6 overhead UNIT COMMENTS
CAPACITANCE
PARAMETER SYMBOL COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Capacitance VOUT UNIT
Notes Test conditions f=1.0 MHz.
CHARACTERISTICS Read Only Operations Characteristics
PARAMETER SYMBOLS JEDEC tAVAV tAVQV STANDARD tACC Address Output Delay tELQV tGLQV tEHQZ tGHQZ tAXQX /OE, Whichever Occurs First Chip Enable Output Delay Chip Enable Output Delay Chip Enable Output High-Z Output Enable Output High-Z Output Hold Time From Addresses, Read Cycle Time DESCRIPTION TEST SETUP
UNIT
TEST SPECIFICATIONS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
TEST CONDITION Output load Output load capacitance, (Including capacitance) Input rise full times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels
HMF1M32M4GL
OTHERS 1TTL gate 0.45-2.4 0.8, 0.8, UNIT
5.0V
2.7k Device Under Test IN3064 Equivalent
6.2k
Diodes IN3064 Equivalent
Note 100pF including capacitance
Erase/Program Operations
PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tOES tGHWL tELWL tWHEH
URL: www.hbe.co.kr REV.02(August,2002)
UNIT
Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write Setup Time Hold Time
tGHWL
HANBit Electronics Co., Ltd.
tWLWH tWHWL tWHWH1 tWHWH2 tWPH tWHWH1 tWHWH2 tVCS Notes This does include preprogramming time This timing only Sector Protect operations Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) time
HMF1M32M4GL
Erase/Program Operations Alternate Controlled Writes
PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 Notes This does include preprogramming time This timing only Sector Protect operations tGHWL tWPH tWHWH1 tWHWH2 Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write Setup Time Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) UNIT
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
READ OPERATIONS TIMING
HMF1M32M4GL
RESET TIMING
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
PROGRAM OPERATIONS TIMING
HMF1M32M4GL
CHIP/SECTOR ERASE OPERATION TIMINGS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
HMF1M32M4GL
TOGGLE# TIMINGS (DURING EMBEDDED ALGORITHMS)
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HMF1M32M4GL
ALTERNATE CONTROLLED WRITE OPERATING TIMINGS
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
PACKAGE DIMENSIONS
HMF1M32M4GL
108mm
6.35
2.03
1.02
6.35
1.27
3.34
95.25
0.25
2.54
1.27
Gold: 1.04±0.10 Solder: 0.914±0.10
1.27(±0.08)
(Solder Gold Plating)
ORDERING INFORMATION
Part Number
Density
Org.
Package
Component Number
SPEED
HMF1M32M4GL-75 HMF1M32M4GL-90 HMF1M32M4GL-120
4MByte 4MByte 4MByte
72Pin-SIMM 72Pin-SIMM 72Pin-SIMM
5.0V 5.0V 5.0V
75ns 90ns 120ns
URL: www.hbe.co.kr REV.02(August,2002)
HANBit Electronics Co., Ltd.
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