32Mbyte(8Mx36) 72-pin SIMM with Parity Mode, Ref. Part HMD8M36M6E, HMD
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HMD8M36M6EG
32Mbyte(8Mx36) 72-pin SIMM with Parity Mode, Ref. Part HMD8M36M6E, HMD8M36M6EG
HMD8M36M6E 36bit dynamic high density memory module. module consists four CMOS DRAMs 50-pin TSOP packages CMOS 4bit Quad DRAM 28pin package mounted 72-pin, double-sided, FR-4-printed circuit board. 0.1uF 0.22uF decoupling capacitor mounted printed circuit board each DRAM components. module single In-line memory module with edge connections intended mounting 72-pin edge connector sockets. module components powered from single power supply inputs outputs TTL-compatible.
FEATURES
Part Identification HMD8M36M6E-4K Cycles/64ms Ref. Solder HMD8M36M6EG- Cycles/64ms Ref. Gold Access times 60ns High-density 32MByte design Single 0.5V power supply JEDEC Standard pinout mode operation compatible inputs outputs FR4-PCB design SYMBOL DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 SYMBOL DQ24 DQ25 DQ26 DQ17 DQ35 /CAS0 /CAS2 /CAS3 /CAS1 /RAS0 /RAS1 SYMBOL DQ27 DQ10 DQ28 DQ11 DQ29 DQ12 DQ30 DQ13 DQ31 DQ32 DQ14 DQ33 DQ15 DQ34 DQ16
ASSIGNMENT
OPTIONS
Timing 50ns access 60ns access Packages 72-pin SIMM
MARKING
60ns 90ns 110ns
PRESENCE DETECT PINS
50ns
PERFORMANCE RANGE
Speed tRAC 50ns 60ns tCAC 13ns 15ns
URL:www.hbe.co.kr REV.1.0 (August.2002)
HANBit Electronics Co.,Ltd.
FUNCTIONAL BLOCK DIAGRAM
DQ0-DQ7
HMD8M36M6EG
/RAS0 /RAS
/CAS0 /LCAS /CAS1 /UCAS
DQ9-DQ16
/RAS
/RAS1 /CAS0
/LCAS
/UCAS DQ10 DQ11 DQ12 DQ13 DQ14 DQ15
/CAS1
A0-A11
DQ10 DQ11 DQ12 DQ13 DQ14 DQ15
A0-A11
/RAS /CAS0 /CAS1 /CAS2 /CAS3
DQ8,17,26,35
/RAS /CAS0 /CAS1 /CAS2 /CAS3 A0-A11
A0-A11
DQ18-DQ25
/RAS0
/RAS
/CAS2
/LCAS
DQ27-DQ34
/RAS /RAS1 /CAS2
/LCAS
/CAS3
/UCAS
DQ10 DQ11 DQ12 DQ13 DQ14 DQ15
/UCAS
DQ10 DQ11 DQ12 DQ13 DQ14 DQ15
/CAS3
A0-A11
A0-A11
A0-A11
0.1uF Capacitor each DRAM 0.22uF DRAMs
URL:www.hbe.co.kr REV.1.0 (August.2002)
HANBit Electronics Co.,Ltd.
ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage Relative Voltage Supply Relative Power Dissipation Storage Temperature SYMBOL ,OUT TSTG
HMD8M36M6EG
RATING 7.0V 7.0V -55oC 150oC
Short Circuit Output Current 50mA Permanent device damage occur Absolute Maximum Ratings" exceeded. Functional operation should restricted conditions detailed operational sections this data sheet. Exposure absolute maximum rating conditions extended periods affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Voltage reference VSS, TA=0 PARAMETER Supply Voltage Ground Input High Voltage Input Voltage SYMBOL -1.0 TYP. Vcc+1 UNIT
OPERATING CHARACTERISTICS
SYMBOL ICC1 SPEED ICC2 ICC3 Don't care ICC4 ICC5 ICC6 Don't care Il(L) IO(L) ICC2 Standby Current /RAS=/CAS=VIH ICC3 /RAS Only Refresh Current /CAS=V /RAS, Address cycling @tRC=min
URL:www.hbe.co.kr REV.1.0 (August.2002)
UNITS
ICC1 Operating Current (/RAS /CAS Address cycling RC=min.)
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ICC4 Mode Current (/RAS=VIL, /CAS, Address cycling @tPC=min ICC5 Standby Current (/RAS=/CAS=Vcc-0.2V ICC6 /CAS-Before-/RAS Refresh Current (/RAS /CAS cycling RC=min Input Leakage Current (Any input 6.5V, other pins under test Output Leakage Current (Data disabled, VOUT 5.5V Output High Voltage Level (IOH= -5mA Output Voltage Level (IOL 4.2mA
HMD8M36M6EG
NOTE: ICC1, ICC3, ICC4 ICC6 dependent output loading cycle rates. Specified values obtained with output open. specified average current. ICC1 ICC3, address changed maximum once while /RAS=VIL. ICC4, address changed maximum once within page mode cycle.
CAPACITANCE
TA=25 SYMBOL CIN1 CIN3 CIN4
DESCRIPTION Input Capacitance (A0-A11) Input Capacitance (/WE) Input Capacitance (/RAS0) Input Capacitance (/CAS0-/CAS3) Input/Output Capacitance (DQ)
UNITS
CHARACTERISTICS
70oC 5V±10%, notes 1,2.) UNIT
STANDARD OPERATION Random read write cycle time Access time from /RAS Access time from /CAS Access time from column address /CAS output Low-Z Output buffer turn-off delay Transition time (rise fall) /RAS precharge time /RAS pulse width /RAS hold time /CAS hold time /CAS pulse width /RAS /CAS delay time /RAS column address delay time /CAS /RAS precharge time address set-up time address hold time
URL:www.hbe.co.kr REV.1.0 (August.2002)
SYMBOL tRAC tCAC tCLZ tOFF tRAS tRSH tCSH tCAS tRCD tRAD tCRP tASR tRAH
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Column address set-up time Column address hold time Column Address /RAS lead time Read command set-up time Read command hold referenced /CAS Read command hold referenced /RAS Write command hold time Write command pulse width Write command /RAS lead time Write command /CAS lead time Data-in set-up time Data-in hold time Data-in hold referenced /RAS Refresh period Write command set-up time /CAS setup time (C-B-R refresh) /CAS hold time (C-B-R refresh) /RAS precharge /CAS hold time Access time from /CAS precharge mode cycle time /CAS precharge time (Fast page) NOTES tASC tCAH tRAL tRCS tRCH tRRH tWCH tRWL tCWL tDHR tREF tWCS tCSR tCHR tRPC tCPA
HMD8M36M6EG
1.An initial pause 200µs required after power-up followed /RAS-only /CAS-before-/RAS refresh cycles
before proper device operation achieved.
2.VIH (min) (max) reference levels measuring timing input signals. Transition times measured between
VIH(min) VIL(max) assumed inputs.
3.Measured with load equivalent 1TTL loads 100pF 4.Operation within tRCD(max) limit insures that tRAC(max) met. tRCD(max) specified reference point only. tRCD
greater than specified tRCD(max) limit, then access time controlled exclusively CAC.
5.Assumes that tRCD tRCD(max)
tAR, tWCR, tDHR referenced tRAD(max) 7.This parameter defines time which output achieves open circuit condition referenced VOL. tWCS, tRWD, tCWD tAWD restrictive operating parameter. They included data sheet electrical characteristic only. tWCS(min) cycle early write cycle data will remain high impedance duration cycle. Either tRCH tRRH must satisfied read cycle. These parameters referenced /CAS leading edge early write cycles leading edge readwrite cycles. Operation within tRAD(max) limit insures that tRAC(max) met. tRAD(max) specified reference point only. tRAD greater than specified tRAD(max) limit. then access time controlled tAA.
URL:www.hbe.co.kr REV.1.0 (August.2002)
HANBit Electronics Co.,Ltd.
PACKAGING INFORMATION
HMD8M36M6EG
107.95 101.19 3.38 R1.57 R3.18 ±0.51mm
18.52 10.16 6.35 2.03 6.35mm 6.35 95.25 R1.57±10
7.68mm
0.25
2.54
Gold 1.04±0.10 1.27 Solder:0.914±0.10mm 1.29±0.08
ORDERING INFORMATION
Part Number
Density
Org.
Package
SPEED
HMD8M36M6EG-5 HMD8M36M6EG-6
32MByte 32MByte
36bit 36bit
Pin-SIMM Pin-SIMM
5.0V 5.0V
50ns 60ns
URL:www.hbe.co.kr REV.1.0 (August.2002)
HANBit Electronics Co.,Ltd.
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