32Mbyte(4Mx64) Fast Page Mode Ref. 3.3V, DIMM Part HMD4M64D16V HM
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HMD4M64D16V
32Mbyte(4Mx64) Fast Page Mode Ref. 3.3V, DIMM Part HMD4M64D16V
HMD4M64D16V 4Mx64bits Dynamic high density memory module. HMD4M64D16V consists sixteen CMOS 4Mx4bits DRAMs SOJ/TSOP 400mil packages mounted 168-pin glass-epoxy substrate. 0.22uF decoupling capacitor mounted printed circuit board each DRAM. HMD4M64D16EV Dual Inline Memory Module intended mounting into edge connector sockets
FEATURES
SPEED Part Identification HMD4M64D16V 4KCycles/64ms Ref, Gold Plate Lead High-density 32MByte design JEDEC standard proposal without buffer CAS-before-RAS Refresh capability RAS-only Hidden refresh capability Single +3.3± 0.3V power supply Fast Page mode operation. LVTTL compatible inputs outputs FR4-PCB design Access times 60ns
PERFORMANCE RANGE
tRAC 50ns 60ns tCAC 15ns 17ns 84ns 104ns tHPC 20ns 25ns
Timing 50ns access 60ns access Packages 168-pin DIMM
NAMES
Name A0-A11 A0-A12 Function Address Input ref) Address Input ref) Name /RAS0, /RAS2 /CAS0 /CAS7 Function Address Strobe Column Strobe /W0,/W2 /OE0,/OE2 Read/Write Enable Output Enable Serial Clock Don't Power (+3.3V) Serial Address /Data Address EEPROM Check DQ0-DQ63 Data In/Out Address Name Function Ground Connection
When Used Parity, SA0-SA2,SCL,CB0-CB7,SDA setting. This Model used.
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HMD4M64D16V
ASSIGNMENT
Symbol DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 /WE0 /CAS0
Symbol /CAS1 /RAS0 /OE0 /OE2 /RAS2 /CAS2 /CAS3 /WE2 DQ16 DQ17
Symbol DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31
Symbol DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 /CAS4
Symbol /CAS5 /RAS1 /RAS3 /CAS6 /CAS7 DQ48 DQ49
Symbol DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63
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FUNCTIONAL BLOCK DIAGRAM
0-63
/CAS0 /RAS0 /OE0 /CAS /RAS DQ0-3 /CAS4 /RAS2 /OE2 /CAS /RAS
HMD4M64D16V
DQ32-35
-A11
-A11
/CAS /RAS
DQ4-7
-A11
/CAS /RAS
DQ36-39
-A11
/CAS1
/CAS /RAS
DQ8-11
/CAS5
-A11
/CAS /RAS
DQ40-43
-A11
/CAS /RAS
DQ12-15
-A11 /CAS6
/CAS /RAS
DQ44-47
-A11
/CAS2
/CAS /RAS
DQ16-19
/CAS /RAS
DQ48-51
-A11
-A11
/CAS /RAS /CAS3
DQ20-23
-A11
/CAS /RAS
DQ52-55
-A11
/CAS /RAS
DQ24-27
/CAS
-A11
/CAS /RAS
DQ56-59
-A11
/CAS /RAS
DQ28-31
-A11
/CAS /RAS
DQ60-63
-A11
/WE0 A(0:11)
/WE2
0.1uF 0.22uF Capacitor DRAMs
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ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage Relative Voltage Supply Relative Power Dissipation Storage Temperature SYMBOL ,OUT TSTG
HMD4M64D16V
RATING -0.5V 4.6V -0.5V 4.6V -55oC 150oC
Short Circuit Output Current 50mA Permanent device damage occur Absolute Maximum Ratings" exceeded. Functional operation should restricted conditions detailed operational sections this data sheet. Exposure absolute maximum rating conditions extended periods affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Voltage reference VSS, TA=0 PARAMETER Supply Voltage Ground Input High Voltage Input Voltage SYMBOL -0.3 TYP. Vcc+0.3 UNIT
OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted) HMD16M64D16EV REF) SYMBOL SPEED ICC1 ICC2 ICC3 ICC4 ICC5 ICC6 Icc7 Iccs 1600 4000 3200 Don't care 1280 1870 1600 1440 Don't care 1600 1870 1870
UNITS
ICC1 Operating Current (/RAS /CAS Address cycling RC=min.) ICC2 Standby Current /RAS=/CAS=VIH
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ICC3 /RAS Only Refresh Current /CAS=V /RAS, Address cycling @tRC=min ICC4 Fast Page Mode Current (/RAS=VIL, /CAS, Address cycling @tPC=min ICC5 Standby Current (/RAS=/CAS=Vcc-0.2V ICC6 /CAS-Before-/RAS Refresh Current (/RAS /CAS cycling RC=min Input Leakage Current (Any input 4.5V, other pins under test Output Leakage Current (Data disabled, VOUT 3.3V Output High Voltage Level (IOH= -2mA Output Voltage Level (IOL
HMD4M64D16V
NOTE: ICC1, ICC3, ICC4 ICC6 dependent output loading cycle rates. Specified values obtained with output open. specified average current. ICC1 ICC3, address changed maximum once while /RAS=VIL. ICC4, address changed maximum once within page mode cycle.
CAPACITANCE
TA=25 3.3V, SYMBOL CIN1 CIN3 CIN4 CDQ1
DESCRIPTION Input Capacitance (A0-A11) Input Capacitance (/W0,/W1,/OE0,/OE2) Input Capacitance (/RAS0,/RAS2) Input Capacitance (/CAS0-/CAS7) Input/Output Capacitance (DQ0-63)
UNITS
CHARACTERISTICS
70oC 3V±10%, notes 1,2.) UNIT
STANDARD OPERATION Random read write cycle time Read-modify-write cycle time Access time from /RAS Access time from /CAS Access time from column address /CAS output Low-Z output Low-Z Output buffer turn-off delay from /CAS Transition time (rise fall) /RAS precharge time /RAS pulse width /RAS hold time /CAS hold time /CAS pulse width /RAS /CAS delay time /RAS column address delay time
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SYMBOL tRWC tRAC tCAC tCLZ tOLZ tOFF tRAS tRSH tCSH tCAS tRCD tRAD
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/CAS /RAS precharge time address set-up time address hold time Column address set-up time Column address hold time Column address hold referenced /RAS Column Address /RAS lead time Read command set-up time Read command hold referenced /CAS Read command hold referenced /RAS Write command hold time Write command pulse width Write command /RAS lead time Write command /CAS lead time Data-in set-up time Data-in hold time Refresh period Write command set-up time /CAS delay time /RAS delay time Column address delay time /CAS precharge delay time /CAS setup time (/CAS-before /RAS refresh) /CAS hold time(/CAS-before-/RAS refresh) /RAS /CAS precharge time Access time from /CAS precharge Hyper page mode cycle time Hyper page mode read-modify write cycle time /CAS precharge time(Hyper page cycle) /RAS pulse width (Hyper page cycle) /RAS hold time from /CAS precharge access time date delay Output buffer tune delay time from command hold time tRASP tRHCP tOEA tOED tOEZ tOEH 200K tCHR tRPC tCPA tHPC tHPRWC tCRP tASR tRAH tASC tCAH tRRH tRAL tRCS tRCH tRRH tWCH tRWL tCWL tREF tWCS tCWD tRWD tAWD tCPWD tCSR
HMD4M64D16V
200K
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Output data hold time Output buffer turn delay from /RAS Output buffer turn delay from data delay /CAS hold time /CAS hold time precharge time pulse width (Hyper page cycle) tDOH tREZ tWEZ tWED tOCH tCHO tOEP tWPE
HMD4M64D16V
NOTES
1.An initial pause 200µs required after power-up followed /RAS-only /CAS-before-/RAS refresh cycles
before proper device operation achieved.
2.Input voltage levels (min) (max) reference levels measuring timing input signals. Transition times
measured between VIH(min) VIL(max) assumed inputs.
3.Measured with load equivalent 1TTL loads 100pF 4.Operation within tRCD(max) limit insures that tRAC(max) met. tRCD(max) specified reference point only. tRCD
greater than specified tRCD(max) limit, then access time controlled exclusively CAC.
5.Assumes that tRCD tRCD(max)
6.This parameter defines time which output achieves open circuit condition referenced VOL. tWCS, tRWD, tCWD tAWD restrictive operating parameter. They included data sheet electrical characteristic only. tWCS(min) cycle early write cycle data will remain high impedance duration cycle data output will contain data read from selected address. neither above conditions satisfied, condition data indeternimated. Either tRCH tRRH must satisfied read cycle. Operation within tRAD(max) limit insures that tRAC(max) met. tRAD(max) specified reference point only. tRAD greater than specified tRAD(max) limit. then access time controlled tAA. /RAS goes high before /CAS high going, open circuit condition output achieved /CAS high going. /Cas goes high before /RAS high going, open circuit condition output achieved /RAS high going. 11.tASC
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TIMING DIAGRAMS
TIMING WAVEFORM READ CYCLE
HMD4M64D16V
/RAS
/CAS
TIMING WAVEFORM WRITE CYCLE (EARLY WRITE)
/RAS
/CAS
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TIMING WAVEFORM WRITE CYCLE (/OE CONTROLLED WRITE) NOTE Dout OPEN
HMD4M64D16V
/RAS
/CAS
READ MODIFY WRITE CYCLE
/RAS
/CAS
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HYPER PAGE READ CYCLE
HMD4M64D16V
/RAS
/CAS
HYPER PAGE WRITE CYCLE (EARLY WRITE) /RAS
/CAS
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HYPER PAGE READ MODIFY WRITE CYCLE /RAS
HMD4M64D16V
/CAS
HYPER PAGE READ WRITE MIXED CYCLE
/RAS
/CAS
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/RAS ONLY REFRESH CYCLE NOTE: /W,/OE,Din Don't care Dout OPEN
HMD4M64D16V
/RAS
/CAS
/CAS BEFORE /RAS REFRESH CYCLE NOTE: /OE, Don't care
/RAS
/CAS
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HIDDEN REFRESH CYCLE READ)
HMD4M64D16V
/RAS
/CAS
HIDDEN REFRESH CYCLE WRITE NOTE: Dout OPEN
/RAS
/CAS
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/CAS BEFORE /RAS REFRESH COUNTER TEST CYCLE /RAS
HMD4M64D16V
/CAS
READ CYCLE
WRITE CYCLE
READ-MODIFY-WRITE
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/CAS BEFORE /RAS SELF REFRESH CYCLE NOTE /OE, Don't care
HMD4M64D16V
/RAS
/CAS
TEST MODE CYCLE NOTE: /OE, Don't care
/RAS
/CAS
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PACKAGING INFORMATION
(FRONT VIEW)
HMD4M64D16V
3.69mm
0.25
2.54
1.27
Gold 1.00mm
1.27±0.1
ORDERING INFORMATION
Part Number Density Org. Package Component Number 16EA 16EA MODE SPEED
HMD4M64D16V-5 HMD4M64D16V-6
32Byte 32Byte
Pin-DIMM Pin-DIMM
3.3V 3.3V
50ns 60ns
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