v01.0106 GaAs PHEMT MMIC WATT POWER AMPLIFIER, AMPLIFIERS CH

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v01.0106 GaAs PHEMT MMIC WATT POWER AMPLIFIER, AMPLIFIERS CH

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HMC486
v01.0106
GaAs PHEMT MMIC WATT POWER AMPLIFIER,
AMPLIFIERS CHIP
Typical Applications
HMC486 ideal power amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment Sensors Military End-Use Space
Features
Saturated Output Power: Output IP3: Gain: Supply: +7.0 1300 Matched Input/Output 2.51 2.51
Functional Diagram
General Description
HMC486 high dynamic range GaAs PHEMT MMIC Watt Power Amplifier which operates from GHz. This amplifier provides gain, saturated power from +7.0 supply voltage. Output typical. I/Os blocked matched Ohms ease integration into Multi-Chip-Modules (MCMs). data taken with chip test fixture connected 0.025mm mil) diameter wire bonds minimal length 0.31mm mils).
Electrical Specifications, +25° +7V, 1300
Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) Adjust between achieve Idd= 1300 typical. Min. Typ. 0.04 33.5 1300 30.5 0.06 Max. Min. Typ. 0.04 33.5 1300 0.06 Max. Units
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC486
v01.0106
GaAs PHEMT MMIC WATT POWER AMPLIFIER,
Broadband Gain Return Loss
RESPONSE (dB)
Gain Temperature
GAIN (dB)
+25C +85C -55C
AMPLIFIERS CHIP
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss Temperature
Output Return Loss Temperature
+25C +85C -55C
RETURN LOSS (dB)
+25C +85C -55C
RETURN LOSS (dB)
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB Temperature
P1dB (dBm) FREQUENCY (GHz)
+25C +85C -55C
Psat Temperature
Psat (dBm) FREQUENCY (GHz)
+25C +85C -55C
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC486
v01.0106
GaAs PHEMT MMIC WATT POWER AMPLIFIER,
AMPLIFIERS CHIP
Output Temperature
OIP3 (dBm) FREQUENCY (GHz)
+25C +85C -55C
Power Compression
Pout (dBm), GAIN (dB),
Pout (dBm) Gain (dB)
INPUT POWER (dBm)
Gain, Power OIP3 Supply Voltage
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) Supply Voltage (Vdc)
Gain P1dB Psat OIP3
Gain, Power OIP3 Supply Current
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 1000 1100 1200 1300
Gain P1dB Psat OIP3
Supply Current (mA)
Noise Figure Temperature
NOISE FIGURE (dB) FREQUENCY (GHz)
+25C +85C -55C
Reverse Isolation Temperature
ISOLATION (dB) FREQUENCY (GHz)
+25C +85C -55C
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC486
v01.0106
GaAs PHEMT MMIC WATT POWER AMPLIFIER,
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) -2.0 9.45 °C/W +150 Class Gate Bias Voltage (Vgg) Input Power (RFin)(Vdd +7.0 Vdc) Channel Temperature
Power Dissipation
10.5 Pdiss +85C
AMPLIFIERS CHIP
POWER DISSIPATION
Continuous Pdiss (derate mW/°C above Thermal Resistance (channel bottom) Storage Temperature Operating Temperature
Sensitivity (HBM)
INPUT POWER (dBm)
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Typical Supply Current
+6.5 +7.0 +7.5 (mA) 1305 1300 1295
Note: Amplifier will operate over full voltage ranges shown above adjusted achieve 1300 +7.0V
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC486
v01.0106
GaAs PHEMT MMIC WATT POWER AMPLIFIER,
AMPLIFIERS CHIP
Outline Drawing
Packaging Information
Standard GP-1 Alternate
Refer "Packaging Information" section packaging dimensions. alternate packaging information contact Hittite Microwave Corporation.
NOTES: DIMENSIONS INCHES [MM] THICKNESS .004" TYPICAL BOND .004" SQUARE BACKSIDE METALLIZATION: GOLD BOND METALLIZATION: GOLD BACKSIDE METAL GROUND. CONNECTION REQUIRED UNLABELED BOND PADS. OVERALL SIZE .002
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC486
v01.0106
GaAs PHEMT MMIC WATT POWER AMPLIFIER,
Descriptions
Number Function RFIN Description This coupled matched Ohms from GHz. Interface Schematic
Power Supply Voltage amplifier. External bypass capacitors required.
RFOUT
This coupled matched Ohms from GHz. Gate control amplifier. Adjust achieve 1300 Please follow "MMIC Amplifier Biasing Procedure" Application Note. External bypass capacitors required.
Bottom
bottom must connected RF/DC ground.
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
AMPLIFIERS CHIP
HMC486
v01.0106
GaAs PHEMT MMIC WATT POWER AMPLIFIER,
AMPLIFIERS CHIP
Assembly Diagram
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC486
v01.0106
GaAs PHEMT MMIC WATT POWER AMPLIFIER,
Mounting Bonding Techniques Millimeterwave GaAs MMICs
should attached directly ground plane eutectically with conductive epoxy (see general Handling, Mounting, Bonding Note). Microstrip transmission lines 0.127mm mil) thick alumina thin film substrates recommended bringing from chip (Figure 0.254mm mil) thick alumina thin film substrates must used, should raised 0.150mm mils) that surface coplanar with surface substrate. accomplish this attach 0.102mm mil) thick 0.150mm mil) thick molybdenum heat spreader (moly-tab) which then attached ground plane (Figure Microstrip substrates should located close possible order minimize bond wire length. Typical die-to-substrate spacing 0.076mm 0.152 mils).
0.102mm (0.004") Thick GaAs MMIC
Wire Bond 0.076mm (0.003")
AMPLIFIERS CHIP
Ground Plane
0.127mm (0.005") Thick Alumina Thin Film Substrate Figure
Handling Precautions
Follow these precautions avoid permanent damage. Storage: bare placed either Waffle based protective containers, then sealed protective shipment. Once sealed protective been opened, should stored nitrogen environment. Cleanliness: Handle chips clean environment. attempt clean chip using liquid cleaning systems. Static Sensitivity: Follow precautions protect against 250V strikes. Transients: Suppress instrument bias supply transients while bias applied. shielded signal bias cables minimize inductive pickup.
0.102mm (0.004") Thick GaAs MMIC
Wire Bond 0.076mm (0.003")
Ground Plane
0.150mm (0.005") Thick Moly 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure
General Handling: Handle chip along edges with vacuum collet with sharp pair bent tweezers. surface chip fragile bridges should touched with vacuum collet, tweezers, fingers.
Mounting
chip back-metallized mounted with AuSn eutectic preforms with electrically conductive epoxy. mounting surface should clean flat. Eutectic Attach: 80/20 gold preform recommended with work surface temperature deg. tool temperature deg. When 90/10 nitrogen/hydrogen applied, tool temperature should deg. expose chip temperature greater than deg. more than seconds. more than seconds scrubbing should required attachment. Epoxy Attach: Apply minimum amount epoxy mounting surface that thin epoxy fillet observed around perimeter chip once placed into position. Cure epoxy manufacturer's schedule.
Wire Bonding
Ball wedge bond with 0.025mm mil) diameter pure gold wire. Thermosonic wirebonding with nominal stage temperature deg. ball bonding force grams wedge bonding force grams recommended. minimum level ultrasonic energy achieve reliable wirebonds. Wirebonds should started chip terminated package substrate. bonds should short possible <0.31mm mils).
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com

v01.0106 GaAs PHEMT MMIC WATT POWER AMPLIFIER, AMPLIFIERS CH

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