HLB122D Triple Diffused Planar Type High Voltage Transistor
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Spec. HD200206 Issued Date 2002.05.01 Revised Date 2005.08.16 Page
HLB122D
Triple Diffused Planar Type High Voltage Transistor
Description
HLB122D medium power transistor designed switching applications.
Features
High breakdown voltage collector saturation voltage Fast switching speed
TO-126ML
Absolute Maximum Ratings (TA=25°C)
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum Power Dissipation Total Power Dissipation (TC=25°C) Maximum Voltages Currents BVCBO Collector Base Voltage. BVCEO Collector Emitter Voltage. BVEBO Emitter Base Voltage. Collector Current (DC) Collector Current (Pulse). 1600 Base Current (DC). Base Current (Pulse).
Electrical Characteristics (TA=25°C)
Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *hFE1 *hFE2 Min. Typ. Max. Unit IC=100uA IC=10mA IE=10uA VCB=600V VCE=400V VEB=6V IC=100mA, IB=20mA IC=300mA, IB=60mA IC=100mA, IB=20mA VCE=10V, IC=0.1A VCE=10V, IC=0.5A VCC=100V, IC=0.3A, IB1=-IB2=0.06A
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Test Conditions
Classification hFE1
Rank Range
HLB122D
10-17
13-22
18-27
23-32
28-37
33-40
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
Spec. HD200206 Issued Date 2002.05.01 Revised Date 2005.08.16 Page
Saturation Voltage Collector Current
10000 VCE(sat) IC=5IB
Saturation Voltage (mV)
1000
VCE=10V
1000
1000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
1000
Saturation Voltage (mV)
VBE(s IC=5IB
1000
Collector Current-IC (mA)
HLB122D
HSMC Product Specification
TO-126ML Dimension
Spec. HD200206 Issued Date 2002.05.01 Revised Date 2005.08.16 Page
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Date Code Control Code
Note: Green label used pb-free packing Style: 1.Emitter 2.Collector 3.Base Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 7.74 10.87 0.88 1.28 3.50 2.61 1.18 2.88 0.68 3.44 1.88 0.50
Max. 8.24 11.37 1.12 1.52 3.75 3.37 1.42 3.12 0.84 2.30 3.70 2.14 0.51
Typical, Unit:
3-Lead TO-126ML Plastic Package HSMC Package Code:
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HLB122D
HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HD200206 Issued Date 2002.05.01 Revised Date 2005.08.16 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec 100oC 150oC 60~120 <3oC/sec 183oC 60~150 +0/-5 10~30 <6oC/sec minutes
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 <3oC/sec 217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature
Dipping time 5sec ±1sec 5sec ±1sec
+0/-5
HLB122D
HSMC Product Specification
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