HLB120S Triple Diffused Planar Type High Voltage Transistors

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

HLB120S Triple Diffused Planar Type High Voltage Transistors

Datasheet Thumbnail

Top Searches for this datasheet

Spec. HA200204 Issued Date 2002.02.01 Revised Date 2005.02.05 Page
HLB120S
Triple Diffused Planar Type High Voltage Transistors
Description
HLB120S medium power transistor designed switching applications. TO-92
Features
High Breakdown Voltage Collector Saturation Voltage Fast Switching Speed
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) Total Power Dissipation (TC=25°C) Maximum Voltages Currents (TA=25°C) VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO Emitter Base Voltage Collector Current (DC) Collector Current (Pulse). Base Current (DC). Base Current (Pulse).
Electrical Characteristics (TA=25°C)
Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *hFE1 *hFE2 Min. Typ. Unit IC=100uA, IE=0 IC=10mA, IB=0 IE=10uA, IC=0 VCB=450V VCE=400V, IB=0 VEB=6V, IC=0 IC=50mA, IB=10mA IC=100mA, IB=20mA IC=50mA, IB=10mA VCE=10V, IC=10mA VCE=10V, IC=50mA
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Test Conditions
HLB120S
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
10000
Spec. HA200204 Issued Date 2002.02.01 Revised Date 2005.02.05 Page
Saturation Voltage Collector Current
Saturation Voltage (mV)
1000
VCE=10V
VCE(sat) IC=5IB
1000
1000
Collector Current (mA)
Collector Current (mA)
Saturation Voltage Collector Current
10000
Capacitance Reverse-Biased Voltage
Saturation Voltage (mV)
1000 VBE(sat) IC=5IB
Capacitance (Pf)
1000
Collector Current (mA)
Reverse Biased Voltage
Switching time Collector Current
10.00
Safe Operating Area
Tstg
1.00
Collector Current (mA)
Switching Time (us).
0.10
PT=1ms PT=100ms 0.01 PT=1s
VCC=125V, IC=5IB
0.01 0.001 1000
Collector Current (mA)
Forward Voltage
HLB120S
HSMC Product Specification
TO-92 Dimension
Spec. HA200204 Issued Date 2002.02.01 Revised Date 2005.02.05 Page
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Control Code
Date Code
Note: Green label used pb-free packing
Style: 1.Emitter 2.Collector 3.Base Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 4.33 4.33 12.70 0.36 3.36 0.36
Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27
Typical, Unit:
3-Lead TO-92 Plastic Package HSMC Package Code:
TO-92 Taping Dimension
F1,F2 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00
Unit:
F1F2
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HLB120S HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HA200204 Issued Date 2002.02.01 Revised Date 2005.02.05 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec 100oC 150oC 60~120 <3oC/sec 183oC 60~150 +0/-5 10~30 <6oC/sec minutes
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 <3oC/sec 217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature
Dipping time 5sec ±1sec 5sec ±1sec
+0/-5
HLB120S
HSMC Product Specification

HLB120S Triple Diffused Planar Type High Voltage Transistors

Top Searches for this datasheet

Other recent searches