HBC517 EPITAXIAL PLANAR TRANSISTOR Description General

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

HBC517 EPITAXIAL PLANAR TRANSISTOR Description General

Datasheet Thumbnail

Top Searches for this datasheet

Spec. HA200217 Issued Date 2002.09.01 Revised Date 2005.02.04 Page
HBC517
EPITAXIAL PLANAR TRANSISTOR
Description
General Purpose High Darlington Transistor
Absolute Maximum Ratings
TO-92
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) Maximum Voltages Currents (TA=25°C) VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO Emitter Base Voltage Collector Current
Electrical Characteristics (TA=25°C)
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Collector Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) Test Condition IC=0.1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=40V, IE=0 VEB=10V, IC=0 IC=100mA, VCE=2V IC=100mA, IB=1mA IC=100mA, IB=1mA IC=100mA, VCE=2V, f=100MHz VCB=10V, f=1MHz, IE=0 Min. Typ. Max. Unit
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HBC517
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
100000 VCE=2V
Spec. HA200217 Issued Date 2002.09.01 Revised Date 2005.02.04 Page
Saturation Voltage Collector Current
1000 VCE(sat) IC=100IB
Saturation Voltage (mV)
10000 1000
1000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
10000 VBE(sat) IC=100IB
Voltage Collector Current
10000 VBE(on) VCE=2V
Saturation Voltage (mV)
1000
Voltage (mV)
1000
1000
Collector Current-IC (mA)
Collector Current-IC (mA)
PD(W), Power Dissipation
Ambient Temperature-Ta
HBC517
HSMC Product Specification
TO-92 Dimension
Spec. HA200217 Issued Date 2002.09.01 Revised Date 2005.02.04 Page
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Control Code
Date Code
Note: Green label used pb-free packing
Style: 1.Collector 2.Base 3.Emitter Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 4.33 4.33 12.70 0.36 3.36 0.36
Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27
Typical, Unit:
3-Lead TO-92 Plastic Package HSMC Package Code:
TO-92 Taping Dimension
F1,F2 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00
Unit:
F1F2
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HBC517 HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HA200217 Issued Date 2002.09.01 Revised Date 2005.02.04 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec 100oC 150oC 60~120 <3oC/sec 183oC 60~150 +0/-5 10~30 <6oC/sec minutes
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 <3oC/sec 217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature
Dipping time 5sec ±1sec 5sec ±1sec
+0/-5
HBC517
HSMC Product Specification

HBC517 EPITAXIAL PLANAR TRANSISTOR Description General

Top Searches for this datasheet

Other recent searches