Silicon N-Channel MOSFET High-Speed Power Switching ADE-208-1425A

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Silicon N-Channel MOSFET High-Speed Power Switching ADE-208-1425A

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H5N6001P
Silicon N-Channel MOSFET High-Speed Power Switching
ADE-208-1425A 2nd. Edition 2001 Features
on-resistance leakage current High speed switching gate charge (Qg)
Outline
TO-3P
Gate Drain (Frange) Source
H5N6001P
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel case thermal inpedance Channel temperature Storage temperature Notes: duty cycle Value 25°C 150°C Symbol VDSS VGSS (pulse)* (pulse)* IAP*
Value 0.833 +150
Unit °C/W
Pch*
ch-c Tstg
Rev.0, 2001, page
H5N6001P
Electrical Characteristics 25°C)
Item Drain source breakdown voltage Zero gate voltage drain current Gate source leak current Gate source cutoff voltage Forward transfer admittance Static drain source state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate source charge Gate drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Note: Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) td(off) 0.30 4640 ±0.1 0.38 Unit Test conditions
diF/dt A/µs
Rev.0, 2001, page
H5N6001P
Main Characteristics
Power Temperature Derating
Channel Dissipation
Drain Current
Maximum Safe Operation Area ratio
this area 0.03 0.01
Operation limited RDS(on)
25°C 1000 Drain Source Voltage
Case Temperature (°C)
Typical Output Characteristics Pulse Test
Drain Current
Typical Transfer Characteristics Pulse Test
Drain Current
75°C 25°C -25°C Gate Source Voltage
Drain Source Voltage
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H5N6001P
Drain Source Saturation Voltage Gate Source Voltage
Drai Source State Resistance RDS(on)
Drain Source Saturation Voltage DS(on)
Pulse Test
Static Drain Source State Resistance Drain Current Pulse Test
Gate Source Voltage Drain Current
Static Drain Source State Resistance RDS(on)
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance Temperature Pulse Test
Forward Transfer Admittance Drain Current -25°C Pulse Test 75°C 25°C
(°C)
Case Temparature
Drain Current
Rev.0, 2001, page
H5N6001P
Body-Drain Diode Reverce Recovery Time 1000
10000 5000
Typical Capacitance Drain Source Voltage
Reverse Recovery Time (ns)
Capacitance (pF)
2000 1000
Ciss
Coss
25°C Reverse Drain Current
Crss
Drain Source Voltage
Dynamic Input Characteristics 1000 10000
Switching Characteristics
Drain source Voltage
Gate Source Voltage
duty
Switching Time (ns)
1000 d(off) d(on) Drain Current
Gate Charge (nC)
Rev.0, 2001, page
H5N6001P
Reverce Drain Current Source Drain Voltage Gate Source Cutoff Voltage Case Temparature
Reverce Drain Current
Gate SourceCutoff Voltage VGS(off)
0.1mA 10mA
Pulse Test Source Drain Voltage
Case Temparature (°C)
Switching Time Test Circuit Monitor D.U.T. Vout Vout Monitor
Waveform
td(off)
td(on)
Rev.0, 2001, page
H5N6001P
Normalized Transient Thermal Impedance Pulse Width
Normalized Transient Thermal Impedance
25°C
0.05
c(t) 0.833°C/W, 25°C
0.03
0.02
0.01
Pulse Width
Rev.0, 2001, page
H5N6001P
Package Dimensions
January, 2001
15.6
Unit:
14.9
19.9
18.0
5.45
5.45
Hitachi Code JEDEC EIAJ Mass (reference value) TO-3P Conforms
Rev.0, 2001, page
H5N6001P
Disclaimer
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Sales Offices
Hitachi, Ltd.
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further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89)
Copyright Hitachi, Ltd., 2001. rights reserved. Printed Japan.
Colophon
Rev.0, 2001, page

Silicon N-Channel MOSFET High-Speed Power Switching ADE-208-1425A

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