2SD2150 SOT-89 BASE COLLECTOR EMITTER TRANSISTOR F
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SOT-89 Plastic-Encapsulate Transistors
2SD2150
SOT-89
BASE COLLECTOR EMITTER
TRANSISTOR
FEATURES Power dissipation Tamb=25 Collector current Collector-base voltage V(BR)CBO Operating storage junction temperature range Tstg: +150
ELECTRICAL CHARACTERISTICS
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance
Tamb=25
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) Test
unless otherwise specified
conditions UNIT
Ic=50 A,IE=0 Ic=1mA,IB=0 IE=50 A,IC=0 VCB=30V,IE=0 VEB=5V,IC=0 VCE=2V,IC=0.1A IC=2A,IB=100mA VCE=2V,IC=0.5A ,f=100MHz VCB=10V,IE=0,f=1MHz
CLASSIFICATION hFE(1) Rank Range Marking 120-270 180-390 270-560
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